Results 111 to 120 of about 637,262 (217)

On the critical thickness of ceramic to shatter WC-Co bullet cores [PDF]

, 2011
In this paper, the 7.62 mm x 51 mm FFV round consisting of a tungsten carbide core (1550 HV) and copper gilding jacket was fired at silicon nitride, titanium diboride, tungsten carbide and silicon carbide ceramics. Of particular interest is the thickness
Hazell, Paul J., Roberson, Colin J.
core  

Simulation Analysis of the Chemical Mechanical Polishing Process for Monocrystal 4H-Silicon Carbide Based on Molecular Dynamics. [PDF]

Micromachines (Basel)
Lei Y, Guo W, Feng K, Sun Z.
europepmc   +1 more source

Single V2 defect in 4H silicon carbide Schottky diode at low temperature. [PDF]

Nat Commun
Steidl T, Kuna P, Hesselmeier-Hüttmann E, Liu D, Stöhr R, Knolle W, Ghezellou M, Ul-Hassan J, Schober M, Bockstedte M, Bian G, Gali A, Vorobyov V, Wrachtrup J.   +13 more
europepmc   +1 more source

Influence of Homoepitaxial Layer Thickness on Flatness and Chemical Mechanical Planarization Induced Scratches of 4H-Silicon Carbide Epi-Wafers. [PDF]

Micromachines (Basel)
Hsieh CH, Cheng CY, Hsiao YK, Wang ZH, Tu CC, Chen CA, Lee PT, Kuo HC.   +7 more
europepmc   +1 more source

Selective Undercut of Undoped Optical Membranes for Spin-Active Color Centers in 4H- Silicon Carbide. [PDF]

ACS Nano
Dietz J, Xie A, Day AM, Hu EL.
europepmc   +1 more source

Silicon Carbide Ceramics Uses in Civil Engineering

Silicon Carbide (SiC) Ceramics has many positive characteristics to compare with other materials and other ceramic bricks. Because of that these advanced ceramics are used as refractory bricks for using in high heat environments such as kilns and ...
Barone, Elīna, Mironovs, Viktors
core  

Controlled Spalling of 4H Silicon Carbide with Investigated Spin Coherence for Quantum Engineering Integration. [PDF]

ACS Nano
Horn CP, Wicker C, Wellisz A, Zeledon C, Nittala PVK, Heremans FJ, Awschalom DD, Guha S.   +7 more
europepmc   +1 more source

Compact Nonvolatile Reconfigurable Mode Converter by Sb₂S₃ Embedded in 4H-Silicon-Carbide-on-Insulator Platform. [PDF]

Nanomaterials (Basel)
Zhu D, Chen J, Qiu S, Deng D, Luo J.
europepmc   +1 more source

Epitaxial and bulk growth of cubic silicon carbide on off-oriented 4H-silicon carbide substrates

, 2015
The growth of bulk cubic silicon carbide has for a long time seemed to be something for the future. However, in this thesis the initial steps towards bulk cubic silicon carbide have been taken. The achievement of producing bulk cubic silicon carbide will have a great impact in various fields of science and industry such as for example the fields of ...
openaire   +1 more source

Effect of Structurally Modified Toluene Diisocyanate-Based Polyurethane Pads on Chemical Mechanical Polishing of 4H Silicon Carbide Substrate. [PDF]

Polymers (Basel)
Meng Y, Zhang S, Zhang Z.
europepmc   +1 more source