Results 61 to 70 of about 637,262 (217)
Characterization of diverse gate oxides on 4H-SiC 3D trench-MOS structures
S.691-694This study focuses on the characterization of silicon dioxide (SiO2) layers, either thermally grown or deposited on trenched 100 mm 4H-silicon carbide (SiC) wafers.
Grieb, M. +4 more
core +1 more source
Porous single crystalline 4H silicon carbide rugate mirrors
Porous 4H silicon carbide optical rugate mirrors have been fabricated with a combination of metal assisted photochemical etching and photoelectrochemical etching.
Markus Leitgeb +3 more
doaj +1 more source
In light of the recent publication of a report on the preparation of crystalline silicon carbide nanowires (NWs) covered with silicon oxide (SiC/SiO2) core–shell nanowires at low temperature, this study uses first-principles calculations based on the ...
Song-Ming Hsu +4 more
doaj +1 more source
By altering surface chemical bonds to prolong relaxation time and shift absorption to lower frequencies, SiC/rare earth–sulfur (RE─S, RE = La, Ce, Pr, Sm, Gd, Er) materials achieve excellent low‐frequency electromagnetic wave absorption under extreme conditions, offering a new direction for designing high‐performance SiC‐based absorbers.
Zhanming Wu +5 more
wiley +1 more source
We investigate fluorescent defect centers in 4H silicon carbide p–n junction diodes fabricated via aluminum-ion implantation into an n-type bulk substrate without the use of an epitaxial growth process.
Fumiya Nagasawa +5 more
doaj +1 more source
Accessing Polyphenols Effect on Bond Strength and Dentin Enzymatic Degradation
ABSTRACT Introduction Polyphenols have been investigated in dental materials and restorative techniques due to their interactions with metal cations, antioxidant activity, and collagen crosslinking ability, which make them a promise for reinforcing the dental substrate and improving material adhesion.
Ana Catarina Rios Castro Alves +7 more
wiley +1 more source
Octave-spanning microcomb generation in 4H-silicon-carbide-on-insulator photonics platform
Silicon carbide has recently emerged as a promising photonics material due to its unique properties, including possessing strong second- and third-order nonlinear coefficients and hosting various color centers that can be utilized for a wealth of quantum
Lutong Cai (14364174) +3 more
core +1 more source
Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1–4 cm2 were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/
Lin-Yue Liu +10 more
doaj +1 more source
In this study, we have investigated possible predicted polymorphs of magnesium oxide (MgO) with respect to their thermodynamic and kinetic stability, as well as their electronic properties, focusing on the possibility of tuning the band gap of the material.
D. Zagorac +4 more
wiley +1 more source
Epsilon‐near‐zero (ENZ) silicon carbide enables a selective far‐infrared emitter spectrally aligned with the human skin window around 10 µm for wavelength‐matched thermal therapy. In 25 within‐subject trials (50 hands) monitored by laser speckle contrast imaging, SiC increases blood perfusion by 30.2% versus a broadband graphite emitter while ...
Wen‐Teng Yao +3 more
wiley +1 more source

