Results 61 to 70 of about 1,545 (184)

The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.
This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian, Mahalakshmi Balan, Ananthi Kaliyamoorthy, Esakki Muthu Sankaran, Govindaraj Vellingiri, Gianluca Gatto, Amit Kumar   +6 more
wiley   +1 more source

Thermal histories of El Médano 300 (EM 300) and Northwest Africa 8155 (NWA 8155): Implications for the diversity of IAB‐ungrouped iron meteorites and their parent bodies

Meteoritics &Planetary Science, Volume 61, Issue 8, Page 1763-1787, August 2026.
Abstract This study provides the first petrographic, crystallographic, and chemical comparison between El Médano 300 (EM 300) and Northwest Africa 8155 (NWA 8155), two particular IAB‐ungrouped iron meteorites. Both contain exceptionally large graphite nodules and “flowers”, providing unique insights into carbon behavior in metallic melts and cooling ...
L. Perez, M. Roskosz, F. Danoix, L. Kern, V. Megevand, C. Brillatz, B. Devouard, J. Gattacceca, M. Gounelle   +8 more
wiley   +1 more source

Transfer Printing and Reconfiguration of Soft Electronics Using Digital Microfluidics and Laser Machining

Advanced Functional Materials, Volume 36, Issue 56, 13 July 2026.
This paper presents a digital microfluidics‐based technique for transferring and reconfiguring soft nanomembranes. Laser‐machined nanothin membranes are picked up, transported, and aligned via tailored surface tension and the actuation of water droplets, enabling the development of flexible electronics, the integration of functional materials on 3D ...
Quang Anh Nguyen, Chi Cong Nguyen, Tran Bach Dang, Phuoc Thien Phan, Jordan Thorpe, Michael Listyawan, Nhat Minh Doan, Sinuo Zhao, Hongru Chen, Trung Thien Hoang, Mingsheng Xu, Jisheng Han, Thanh Nho Do, Adam Hill, Timothée Mouterde, Hoang‐Phuong Phan   +15 more
wiley   +1 more source

High Temperature Simulation of 4H-SiC Bipolar Circuits

IEEE Journal of the Electron Devices Society, 2015
High speed and high-temperature operation capabilities are desirable features of integrated circuits. Due to their innate electrical and physical properties, silicon devices face significant hurdles at elevated temperatures, while silicon carbide devices
Hazem Elgabra, Shakti Singh
doaj   +1 more source

Metal assisted photochemical etching of 4H silicon carbide

Journal of Physics D: Applied Physics, 2017
Abstract Metal assisted photochemical etching (MAPCE) of 4H–silicon carbide (SiC) in Na2S2O8/HF and H2O2/HF aqueous solutions is investigated with platinum as metallic cathode. The formation process of the resulting porous layer is studied with respect to
Markus Leitgeb, Christopher Zellner, Michael Schneider, Stefan Schwab, Herbert Hutter, Ulrich Schmid   +5 more
openaire   +1 more source

Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride

Advanced Materials Interfaces
In this report, the advanced manufacturing advantages of using supersaturated chlorinated chemistry are demonstrated at 1550 °C in 4H‐silicon carbide (4H‐SiC) epitaxy on trenches with different geometric profiles. Sloped mesa sidewalls (8°) show improved
Kelly Turner, Gerard Colston, Katarzyna Stokeley, Andrew Newton, Arne Renz, Marina Antoniou, Peter Gammon, Philip Mawby, Vishal Shah   +8 more
doaj   +1 more source

Entangled photon pair generation in an integrated SiC platform

Light: Science & Applications
Entanglement plays a vital role in quantum information processing. Owing to its unique material properties, silicon carbide recently emerged as a promising candidate for the scalable implementation of advanced quantum information processing capabilities.
Anouar Rahmouni, Ruixuan Wang, Jingwei Li, Xiao Tang, Thomas Gerrits, Oliver Slattery, Qing Li, Lijun Ma   +7 more
doaj   +1 more source

Modeling of electrons transfer in silicon carbide semiconductor structures

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The results of the simulation of electron transfer processes in the three-dimensional structure of 4H-SiC silicon carbide are presented using the Monte Carlo method.
V. V. Murav'ev, V. N. Mishchenka
doaj  

Photovoltaic Behavior of V₂O₅/4H-SiC Schottky Diodes for Cryogenic Applications

IEEE Journal of the Electron Devices Society, 2015
The photovoltaic behavior of (divanadioum pentoxide)/(4H polytype silicon carbide) Schottky diodes under ultraviolet illumination and down to 28K is investigated.
Luigi Di Benedetto, Giovanni Landi, Gian Domenico Licciardo, Heinz-Christoph Neitzert, Salvatore Bellone   +4 more
doaj   +1 more source

Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform. [PDF]

Light Sci Appl, 2022
Wang C, Li J, Yi A, Fang Z, Zhou L, Wang Z, Niu R, Chen Y, Zhang J, Cheng Y, Liu J, Dong CH, Ou X.   +12 more
europepmc   +1 more source