Results 41 to 50 of about 637,262 (217)

4H-SiC microring opto-mechanical oscillator with a self-injection locked pump

APL Photonics
We have demonstrated, for the first time to our knowledge, self-injection locking of a distributed feedback diode laser to a multimode 4H-silicon carbide (4H-SiC) microring resonator, which is also used for the observation of resonant opto-mechanical ...
Anatoliy Savchenkov, Jingwei Li, Ruixuan Wang, Andrey B. Matsko, Qing Li, Hossein Taheri   +5 more
doaj   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

A Novel Low On–State Resistance Si/4H–SiC Heterojunction VDMOS with Electron Tunneling Layer Based on a Discussion of the Hetero–Transfer Mechanism

Crystals, 2023
In this study, we propose a novel silicon (Si)/silicon carbide (4H–SiC) heterojunction vertical double–diffused MOSFET with an electron tunneling layer (ETL) (HT–VDMOS), which improves the specific on–state resistance (RON), and examine the hetero ...
Hang Chen, Yourun Zhang, Rong Zhou, Zhi Wang, Chao Lu, Zehong Li, Bo Zhang   +6 more
doaj   +1 more source

Ablation‐Immune Thermal Armor Via Microstructural‐Compatibility Design for Extreme Thermal Conditions

Advanced Science, EarlyView.
This study unveils a microstructural‐compatibility design strategy that integrates reactive melt infiltration with plasma spraying to fabricate carbon fiber‐reinforced ZrC‐SiC composites. The deliberate incorporation of SiC into the ZrC coating releases heat accumulation, suppresses detrimental lamellar ZrO2 formation, and reduces residual stress. This
Hongkang Ou, Lingxiang Guo, Bing Liu, Ziyi Yi, Yuyu Zhang, Jia Sun, Qiangang Fu   +6 more
wiley   +1 more source

Magnetorheological Polishing of Silicon Carbide to Angstrom-Scale Surface Roughness

Приборы и методы измерений
Single-crystal silicon carbide is a promising third-generation semiconductor material. Thanks to its large band gap, electronics based on it can withstand extreme operating temperatures of up to 500 °C and above and are resistant to radiation.
V. M. Kholad, A. L. Khudoley, P. S. Grinchuk, V. A. Lapitskaya   +3 more
doaj   +1 more source

Surface defects in 4H-SiC homoepitaxial layers

Nanotechnology and Precision Engineering, 2020
Although a high-quality homoepitaxial layer of 4H‑silicon carbide (4H-SiC) can be obtained on a 4° off-axis substrate using chemical vapor deposition, the reduction of defects is still a focus of research.
Lixia Zhao
doaj   +1 more source

Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Physical Review X, 2023
Color centers are point defects in crystals that can provide an optical interface to a long-lived spin state for distributed quantum information processing applications. An outstanding challenge for color center quantum technologies is the integration of
Daniil M. Lukin, Melissa A. Guidry, Joshua Yang, Misagh Ghezellou, Sattwik Deb Mishra, Hiroshi Abe, Takeshi Ohshima, Jawad Ul-Hassan, Jelena Vučković   +8 more
doaj   +1 more source

Electrical Properties and Interfacial Strain in Thermally Oxidized 4H‐SiC MOS Structures Under Different Post‐Oxidation Annealing

Advanced Electronic Materials, EarlyView.
This work investigates the electrical properties and interfacial strain in thermally oxidized 4H‐SiC MOS structures under different post‐oxidation annealing. Nitrogen annealing simultaneously reduces interface state density and increases interfacial tensile strain, thus being accompanied by the formation of an interfacial dipole.
Fabrizio Roccaforte, Salvatore Ethan Panasci, Valerio Votadoro, Salvatore Di Franco, Marilena Vivona, Simone Milazzo, Marco Zignale, Filippo Giannazzo, Béla Pécz, Patrick Fiorenza   +9 more
wiley   +1 more source

Design Considerations for 4H-SiC Lateral BJTs for High Temperature Logic Applications

IEEE Journal of the Electron Devices Society, 2018
4H-silicon carbide (SiC)-based bipolar integrated circuits (ICs) are suitable alternatives to silicon (Si)-based ICs in high temperature applications, owing to superior properties of 4H-SiC and the robust performance of SiC bipolar junction transistors ...
Amna Siddiqui, Hazem Elgabra, Shakti Singh   +2 more
doaj   +1 more source

Revealing Hidden Raman Signatures Through Attention‐Based Spectral Unmixing

Advanced Intelligent Systems, EarlyView.
Weak Raman signatures are recovered from background‐dominated spectra using a transformer‐based, reference‐free spectral unmixing AI framework. Self‐attention reconstructs substrate contribution directly from mixed data, enabling reliable extraction of previously inaccessible vibrational features.
Dmitriy A. Poteryayev, Pietro Novelli, Annalisa Coriolano, Riccardo Dettori, Valentina Tozzini, Fabio Beltram, Massimiliano Pontil, Antonio Rossi, Stiven Forti, Camilla Coletti   +9 more
wiley   +1 more source