Results 11 to 20 of about 1,545 (184)

Dislocation-related leakage-current paths of 4H silicon carbide

Frontiers in Materials, 2023
Improving the quality of 4H silicon carbide (4H-SiC) epitaxial layers to reduce the leakage current of 4H-SiC based high-power devices is a long-standing issue in the development of 4H-SiC homoepitaxy.
Wandong Gao, Wandong Gao, Guang Yang, Yixiao Qian, Yixiao Qian, Xuefeng Han, Xuefeng Han, Can Cui, Xiaodong Pi, Xiaodong Pi, Deren Yang, Deren Yang, Rong Wang, Rong Wang   +13 more
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Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation

Advanced Materials Interfaces, 2023
High‐efficiency and low‐loss processing is the mainstay to reduce the cost and deepen the application of 4H silicon carbide (4H‐SiC) wafers in high‐power and high‐frequency electronics.
Wenhao Geng, Qinqin Shao, Yan Pei, Lingbo Xu, Can Cui, Xiaodong Pi, Deren Yang, Rong Wang   +7 more
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Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser

Crystals, 2022
The physical properties of silicon carbide (SiC) are excellent as a third-generation semiconductor. Nevertheless, diamond wire cutting has many drawbacks, including high loss, long cutting time and prolonged processing time.
Hanwen Wang, Qiu Chen, Yongping Yao, Linlin Che, Baitao Zhang, Hongkun Nie, Rongkun Wang   +6 more
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Characteristics of interacting carbon-antisite-vacancies in 4H silicon carbide

AIP Advances, 2023
Spin defects in semiconductors have demonstrated promising electronic structures for potential applications in quantum computing and sensing. Among various proposed quantum byte systems, spin defects in silicon carbide have attracted significant ...
Qingsong Liu, Jun Deng, Yong Sun, Zhengjia Wang, Shuwei Song   +4 more
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Impact ionization coefficients of 4H silicon carbide [PDF]

Applied Physics Letters, 2004
Anisotropy of the impact ionization coefficients of 4H silicon carbide is investigated by means of the avalanche breakdown behavior of p+n diodes on (0001) and (112¯0) 4H silicon carbide epitaxial wafers. The impact ionization coefficients are extracted from the avalanche breakdown voltages and the multiplication of a reverse leakage current, due to ...
T. Hatakeyama, T. Watanabe, T. Shinohe, K. Kojima, K. Arai, N. Sano   +5 more
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Electron paramagnetic resonance characterization of aluminum ion implantation-induced defects in 4H-SiC

Nanotechnology and Precision Engineering, 2019
Deep-level defects in silicon carbide (SiC) are critical to the control of the performance of SiC electron devices. In this paper, deep-level defects in aluminum ion-implanted 4H-SiC after high-temperature annealing were studied using electron ...
Xiuhong Wang, Zongwei Xu, Mathias Rommel, Bing Dong, Le Song, Clarence Augustine TH Tee, Fengzhou Fang   +6 more
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Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Advanced Materials Interfaces, 2023
4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones.
Wantang Wang, Xuesong Lu, Xinke Wu, Yiqiang Zhang, Rong Wang, Deren Yang, Xiaodong Pi   +6 more
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PHASE CHANGES ON 4H AND 6H SIC AT HIGH TEMPERATURE OXIDATION

Urania, 2016
PHASE CHANGES ON 4H AND 6H SIC AT HIGH TEMPERATURE OXIDATION. The oxidation on two silicon carbide contain 6H phase and contains 6H and 4H phases has been done.
Jan Setiawan, Ganisa K Suryaman, Masrukan Masrukan   +2 more
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Depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons

APL Photonics, 2016
Silicon carbide (SiC) is a promising material for new generation electronics including high power/high temperature devices and advanced optical applications such as room temperature spintronics and quantum computing.
Andrey Baydin, Halina Krzyzanowska, Munthala Dhanunjaya, S. V. S. Nageswara Rao, Jimmy L. Davidson, Leonard C. Feldman, Norman H. Tolk   +6 more
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Crystal structures and the electronic properties of silicon-rich silicon carbide materials by first principle calculations

Heliyon, 2019
Silicon carbide has been used in a variety of applications including solar cells due to its high stability. The high bandgap of pristine SiC, necessitates nonstoichiometric silicon carbide materials to be considered to tune the band gap for efficient ...
Noura D. Alkhaldi, Sajib K. Barman, Muhammad N. Huda   +2 more
doaj   +1 more source