Simple method for the growth of 4H silicon carbide on silicon substrate [PDF]
AIP Advances, 2016 In this study we report thermal evaporation technique as a simple method for the growth of 4H silicon carbide on p-type silicon substrate. A mixture of Si and C60 powder of high purity (99.99%) was evaporated from molybdenum boat.
M. Asghar +6 more
doaj +3 more sources
Spin-acoustic control of silicon vacancies in 4H silicon carbide
Nature Electronics, 2023 AbstractBulk acoustic resonators can be fabricated on the same substrate as other components and can operate at various frequencies with high quality factors. Mechanical dynamic metrology of these devices is challenging as the surface information available through laser Doppler vibrometry lacks information about the acoustic energy stored in the bulk ...
Jonathan R. Dietz +4 more
core +8 more sources
Polarization and spatial mode dependent four-wave mixing in a 4H-silicon carbide microring resonator
APL Photonics, 2021 We report four-wave mixing with different polarization and spatial modes in a single 4H-silicon carbide photonic device. Our device shows great potential to perform high-dimensional multiplexing for optical communication and high-dimensional entanglement
Xiaodong Shi +8 more
doaj +2 more sources
Characteristics of interacting carbon-antisite-vacancies in 4H silicon carbide
AIP Advances, 2023 Spin defects in semiconductors have demonstrated promising electronic structures for potential applications in quantum computing and sensing. Among various proposed quantum byte systems, spin defects in silicon carbide have attracted significant ...
Qingsong Liu +4 more
doaj +2 more sources
4H silicon carbide bulk acoustic wave gyroscope with ultra-high Q-factor for on-chip inertial navigation [PDF]
Communications EngineeringInertial navigation on a chip has long been constrained by the noise and stability issues of micromechanical Coriolis gyroscopes, as silicon, the dominant material for microelectromechanical system devices, has reached the physical limits of its material
Zhenming Liu +4 more
doaj +2 more sources
Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers
Advanced Materials Interfaces, 2023 4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones.
Wantang Wang +6 more
doaj +2 more sources
Numerical Simulation and Experimental Study on Picosecond Laser Polishing of 4H-SiC Wafer [PDF]
Micromachines4H-SiC wafers usually require polishing treatment after slicing to improve the surface quality. However, traditional polishing processes have problems such as low removal efficiency and easy surface damage, which affect the reliability of electronic ...
Yixiong Yan +5 more
doaj +2 more sources
Porous single crystalline 4H silicon carbide rugate mirrors [PDF]
APL Materials, 2017 Porous 4H silicon carbide optical rugate mirrors have been fabricated with a combination of metal assisted photochemical etching and photoelectrochemical etching.
Markus Leitgeb +3 more
doaj +2 more sources
Mechanism of Tailoring Laser-Induced Periodic Surface Structures on 4H-SiC Crystal Using Ultrashort-Pulse Laser [PDF]
NanomaterialsIn this study, we examine the characteristics of laser-induced periodic surface structures (LIPSSs) fabricated on N-doped 4H-SiC (N-SiC) and high-purity 4H-SiC (HP-SiC) crystals using femtosecond–picosecond lasers. The effects of various laser parameters
Erxi Wang +9 more
doaj +2 more sources
Demonstration of 4H-silicon carbide on an aluminum nitride integrated photonic platform
Optics LettersThe existing silicon-carbide-on-insulator photonic platform utilizes a thin layer of silicon dioxide under silicon carbide (SiC) to provide optical confinement and mode isolation. Here, we replace the underneath silicon dioxide layer with 1-µm-thick aluminum nitride and demonstrate a 4H-silicon-carbide-on-aluminum-nitride integrated photonic platform ...
Ruixuan Wang +3 more
core +5 more sources