A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide [PDF]
, 2012 The influence of polymorphism on nanometric machinability of single crystal silicon carbide (SiC) has been investigated through molecular dynamics (MD) simulation. The simulation results are compared with silicon as a reference material. Cutting hardness
Reuben, Robert L +2 more
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Brittle–ductile transition during diamond turning of single crystal silicon carbide [PDF]
, 2013 In this experimental study, diamond turning of single crystal 6H-SiC was performed at a cutting speed of 1 m/s on an ultra-precision diamond turning machine (Moore Nanotech 350 UPL) to elucidate the microscopic origin of ductile-regime machining ...
Reuben, Robert L +5 more
core +4 more sources
Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting [PDF]
, 2011 Cubic silicon carbide (SiC) is an extremely hard and brittle material having unique blend of material properties which makes it suitable candidate for microelectromechanical systems and nanoelectromechanical systems applications.
Luo, X. +3 more
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Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser
Crystals, 2022 The physical properties of silicon carbide (SiC) are excellent as a third-generation semiconductor. Nevertheless, diamond wire cutting has many drawbacks, including high loss, long cutting time and prolonged processing time.
Hanwen Wang +6 more
doaj +1 more source
Characteristics of interacting carbon-antisite-vacancies in 4H silicon carbide
AIP Advances, 2023 Spin defects in semiconductors have demonstrated promising electronic structures for potential applications in quantum computing and sensing. Among various proposed quantum byte systems, spin defects in silicon carbide have attracted significant ...
Qingsong Liu +4 more
doaj +1 more source
Influence of temperature and crystal orientation on tool wear during single point diamond turning of silicon [PDF]
, 2012 Owing to the capricious wear of cutting tools, ultra precision manufacturing of silicon through single point diamond turning (SPDT) operation becomes a challenging task.
Reuben, Robert L +3 more
core +4 more sources
Nanotechnology and Precision Engineering, 2019 Deep-level defects in silicon carbide (SiC) are critical to the control of the performance of SiC electron devices. In this paper, deep-level defects in aluminum ion-implanted 4H-SiC after high-temperature annealing were studied using electron ...
Xiuhong Wang +6 more
doaj +1 more source
A Review of silicon carbide development in MEMS applications [PDF]
, 2009 Due to its desirable material properties, Silicon Carbide (SiC) hasbecome an alternative material to replace Si for MicroelectromechanicalSystems (MEMS) applications in harsh environments.
Cheung, R., Jiang, Liudi
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Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers
Advanced Materials Interfaces, 2023 4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones.
Wantang Wang +6 more
doaj +1 more source
Impact ionization coefficients of 4H silicon carbide [PDF]
Applied Physics Letters, 2004 Anisotropy of the impact ionization coefficients of 4H silicon carbide is investigated by means of the avalanche breakdown behavior of p+n diodes on (0001) and (112¯0) 4H silicon carbide epitaxial wafers. The impact ionization coefficients are extracted from the avalanche breakdown voltages and the multiplication of a reverse leakage current, due to ...
T. Hatakeyama +5 more
openaire +1 more source