Results 121 to 130 of about 240,009 (234)

In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

, 2009
The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants.
Liu, XF, Sun, GS, Wang, L, Zhao, WS, Ji, G, Zeng, YP, Zhao, YM, Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.   +7 more
core  

4H-SiC PIN Diodes as Environment to Modify ⁷Be Radioactive Decay Time. [PDF]

Materials (Basel)
Boldrini V, Di Benedetto L, Carrano V, Canino M, Casali N, Buompane R, Santonastaso C, Mitsou ML, Chakraborty K, Yadav RP, Singh A, Pieruccini M, Degli Esposti Boschi C, Laubenstein M, Rubino A, Formicola A, Neitzert HC, Gialanella L.   +17 more
europepmc   +1 more source

Revealing the Nanoindentation-Induced Plastic Deformation Mechanisms of 4H-SiC: Combined Insights from Molecular Dynamics Simulations and Experiments. [PDF]

Materials (Basel)
Lin W, Li H, Hu Z, Peng F, Zhou Z, Yu Y, Wu Y, Xu X.   +7 more
europepmc   +1 more source

Self difference frequency generation in 4H-SiC

, 2013
We demonstrated a new effective nonlinear material 4H-SiC for broadband mid-infrared radiation. Phase-matched difference frequency generation in 4H-SiC is successful obtained.
We, Z, Wang, G, Liui, Y, Liu, C, Zhan, M, ,, Wang, S, Chen, X, Xuan, H, Xu, C   +9 more
core  

Ultraviolet Photodetectors Based on 4H-SiC With Honeycomb-Like Light-Trapping Structures. [PDF]

Adv Sci (Weinh)
Xiong H, Luo X, Yang Q, Hu Y, Chen J, Song L, Yang D, Pi X.   +7 more
europepmc   +1 more source

Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces

, 2004
Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low pressure chemical vapor deposition (LPCVD) reactor with SiH4 and C2H4 at temperature of 1500 C and pressure of 20 Torr.
Sun, GS, Ning, J, Wang, L, Zhao, WS, Zhang, YX, Li, JM, Zeng, YP, Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China., Gao, X   +8 more
core  

The Surge Current Failure and Thermal Analysis of 4H-SiC Schottky Barrier Diode

The surge current capability is one of the key parameters for the application of silicon carbide (SiC) Schottky barrier diode (SBD) in power converters. In this study, the surge current failure mechanism of a 650 V 4H-SiC SBD during non-repetitive surge ...
Cui, P, Xu, M, Zhong, Y, Zhang, B, Han, J, Cui, Y, Linewih, H   +6 more
core   +1 more source

Research on Stress Variations During the 4H-SiC Indentation Process. [PDF]

Micromachines (Basel)
Wang W, Lin S, Yu Y, Duan N.
europepmc   +1 more source

Blog de l'ADT-SIC

, 2013
Le carnet de l'ADT-SIC, l’Association des Doctorants Toulousains en Sciences de l’Information et de la Communication, vise à promouvoir une jeune association qui a pour objectif de mettre en réseau les doctorants en SIC à Toulouse (et dans la région), de
Bureau de l'Adt-SIC
core  

Advances and Perspectives in Gate Dielectric Thin Films for 4H-SiC MOSFETs. [PDF]

Materials (Basel)
Bai Z, Liang J, Ding C, Zhou Z, Luo M, Gu L, Ma HP, Zhang QC.   +7 more
europepmc   +1 more source