Results 91 to 100 of about 240,009 (234)
In this paper, the chemical vapor deposition (CVD) processing for 4H-SiC epilayer is investigated with particular emphasis on the defects and the noise properties.
Jinlan Li +6 more
doaj +1 more source
DISCO: a general software tool for dislocation contrast factor calculations in diffraction analysis
DISCO is a program capable of calculating the X‐ray contrast factor for single‐ and polycrystalline materials in real time.Dislocation contrast factors (CFs) play a central role in diffraction‐based analyses of plastic deformation, linking the elastic strain fields generated by dislocations to diffraction line broadening.
Marcelo Augusto Malagutti +2 more
wiley +1 more source
ABSTRACT Reliable fatigue design of welded components under multiaxial loading demands local criteria able to capture both the stress gradient at the weld notches and the influence of a complex loading condition including non proportionality of the stress‐strain load history. The Effective Critical Plane (ECP) approach, based on a stress averaging over
A. Chiocca, F. Frendo
wiley +1 more source
In operando imaging of the space‐charge region in a 4H‐SiC MOSCAP using STEM‐EBIC
Abstract In situ biasing electron microscopy is the necessary step forward in being able to characterise nanoscale devices and device interfaces. STEM‐EBIC is a new approach that can help fill the missing gaps in creating reproducible methodologies for in situ biasing TEM.
Eoin Moynihan +5 more
wiley +1 more source
Deformation-induced phase transformation in 4H-SiC nanopillars
The deformation behaviour of single-crystal SiC nanopillars was studied by a combination of in situ deformation transmission electron microscopy and molecular dynamics simulations.
Shen, Y. +18 more
core +1 more source
First integration of ZnO nanorods with aerosol‐printed 3D Ag meshes for UV photodetector. 3D Ag/ZnO enhances light absorption and charge separation by providing a large active surface area for efficient charge generation and a strong UV response.
Elius Hossain +3 more
wiley +1 more source
Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs
Homoepitaxial growth of4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates was performed at 1500℃ by using the step controlled Epitaxy. Ti/4H-SiC Schottky barrier diodes (SBDs) with blocking voltage over lkV have been made on an undoped epilayer with
LI Jinmin +7 more
core
Study of Ion Induced Damage in 4H-SiC
The damage produced by 2 MeV protons on a 4H-SiC Schottky diode has been investigated by monitoring the charge collection efficiency as the function of the ion fluence. A new algorithm based on the Shockley-Ramo-Gunn theorem has been developed to interpret the experimental results. The fitting procedure provides a parameter which is proportional to the
LO GIUDICE, Alessandro +8 more
openaire +6 more sources
ABSTRACT Multifunctional thermal protective ceramic thermal/environmental barrier coatings (T/EBCs) are of great significance for applications of various high‐temperature components, and we propose an effective strategy for designing high‐entropy ceramics (HECs) as T/EBCs for SiC ceramic matrix composites (CMCs), where low thermal expansion ...
Qinshuo Wang +7 more
wiley +1 more source
Investigation of Nanocutting Characteristics of Off-Axis 4H-SiC Substrate by Molecular Dynamics
Silicon carbide (SiC), especially 4H-SiC, is an ideal semiconductor in power electronics due to its outstanding electrical and thermal properties. It has high hardness and brittleness, which makes it difficult to machine.
Miaocao Wang +3 more
doaj +1 more source

