Results 91 to 100 of about 240,009 (234)

Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

open access: yesMicromachines, 2020
In this paper, the chemical vapor deposition (CVD) processing for 4H-SiC epilayer is investigated with particular emphasis on the defects and the noise properties.
Jinlan Li   +6 more
doaj   +1 more source

DISCO: a general software tool for dislocation contrast factor calculations in diffraction analysis

open access: yesJournal of Applied Crystallography, EarlyView.
DISCO is a program capable of calculating the X‐ray contrast factor for single‐ and polycrystalline materials in real time.Dislocation contrast factors (CFs) play a central role in diffraction‐based analyses of plastic deformation, linking the elastic strain fields generated by dislocations to diffraction line broadening.
Marcelo Augusto Malagutti   +2 more
wiley   +1 more source

Fatigue Assessment of Welded Joints Subjected to Multiaxial Loading Conditions through the Effective Critical Plane Approach

open access: yesFatigue &Fracture of Engineering Materials &Structures, EarlyView.
ABSTRACT Reliable fatigue design of welded components under multiaxial loading demands local criteria able to capture both the stress gradient at the weld notches and the influence of a complex loading condition including non proportionality of the stress‐strain load history. The Effective Critical Plane (ECP) approach, based on a stress averaging over
A. Chiocca, F. Frendo
wiley   +1 more source

In operando imaging of the space‐charge region in a 4H‐SiC MOSCAP using STEM‐EBIC

open access: yesJournal of Microscopy, EarlyView.
Abstract In situ biasing electron microscopy is the necessary step forward in being able to characterise nanoscale devices and device interfaces. STEM‐EBIC is a new approach that can help fill the missing gaps in creating reproducible methodologies for in situ biasing TEM.
Eoin Moynihan   +5 more
wiley   +1 more source

Deformation-induced phase transformation in 4H-SiC nanopillars

open access: yes, 2014
The deformation behaviour of single-crystal SiC nanopillars was studied by a combination of in situ deformation transmission electron microscopy and molecular dynamics simulations.
Shen, Y.   +18 more
core   +1 more source

High‐Performance UV Photodetectors Based on ZnO Hierarchical Nanostructures Grown on Aerosol‐Printed 3D Ag Mesh

open access: yesENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 6, November 2026.
First integration of ZnO nanorods with aerosol‐printed 3D Ag meshes for UV photodetector. 3D Ag/ZnO enhances light absorption and charge separation by providing a large active surface area for efficient charge generation and a strong UV response.
Elius Hossain   +3 more
wiley   +1 more source

Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs

open access: yes, 2005
Homoepitaxial growth of4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates was performed at 1500℃ by using the step controlled Epitaxy. Ti/4H-SiC Schottky barrier diodes (SBDs) with blocking voltage over lkV have been made on an undoped epilayer with
LI Jinmin   +7 more
core  

Study of Ion Induced Damage in 4H-SiC

open access: yesMaterials Science Forum, 2005
The damage produced by 2 MeV protons on a 4H-SiC Schottky diode has been investigated by monitoring the charge collection efficiency as the function of the ion fluence. A new algorithm based on the Shockley-Ramo-Gunn theorem has been developed to interpret the experimental results. The fitting procedure provides a parameter which is proportional to the
LO GIUDICE, Alessandro   +8 more
openaire   +6 more sources

Manipulating RE‐O Bonds Engineered Thermal/Oxygen Transport Characteristics of Monoclinic‐Prime RETaO4 High‐Entropy Ceramics

open access: yesRare Metals, Volume 45, Issue 10, October 2026.
ABSTRACT Multifunctional thermal protective ceramic thermal/environmental barrier coatings (T/EBCs) are of great significance for applications of various high‐temperature components, and we propose an effective strategy for designing high‐entropy ceramics (HECs) as T/EBCs for SiC ceramic matrix composites (CMCs), where low thermal expansion ...
Qinshuo Wang   +7 more
wiley   +1 more source

Investigation of Nanocutting Characteristics of Off-Axis 4H-SiC Substrate by Molecular Dynamics

open access: yesApplied Sciences, 2018
Silicon carbide (SiC), especially 4H-SiC, is an ideal semiconductor in power electronics due to its outstanding electrical and thermal properties. It has high hardness and brittleness, which makes it difficult to machine.
Miaocao Wang   +3 more
doaj   +1 more source

Home - About - Disclaimer - Privacy