Results 41 to 50 of about 240,009 (234)
Isotropic piezoresistance of p-type 4H-SiC in (0001) plane [PDF]
, 2018 In this work, the isotropic piezoresistance in the (0001) plane of p-type 4H-SiC was discovered by means of the hole energy shift calculation and the coordinate transformation. These results were also confirmed by the measurement of the piezoresistance
Nguyen, Nam-Trung +19 more
core +1 more source
Micromachines, 2023 Although many refractory metals have been investigated as the choice of contact metal in 4H-SiC devices, palladium (Pd) as a Schottky barrier contact for 4H-SiC radiation detectors for harsh environment applications has not been investigated adequately ...
Krishna C. Mandal +2 more
doaj +1 more source
Thermoresistance of p-Type 4H-SiC Integrated MEMS Devices for High-Temperature Sensing [PDF]
, 2019 There is an increasing demand for the development and integration of multifunctional sensing modules into power electronic devices that can operate in high temperature environments.
Nguyen, Nam-Trung +11 more
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Holos, 2019 AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and
Masoud Sabaghi
doaj +1 more source
Integrated photoanode based on silicon carbide nanowire arrays for efficient water splitting
工程科学学报, 2023 In the context of rapid social development, it is urgent to address the increasingly prominent issues of fossil energy depletion and environmental pollution.
Lin-lin ZHOU +4 more
doaj +1 more source
Advanced Materials, EarlyView.A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi +12 more
wiley +1 more source
Simple method for the growth of 4H silicon carbide on silicon substrate
AIP Advances, 2016 In this study we report thermal evaporation technique as a simple method for the growth of 4H silicon carbide on p-type silicon substrate. A mixture of Si and C60 powder of high purity (99.99%) was evaporated from molybdenum boat.
M. Asghar +6 more
doaj +1 more source
Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer
Micromachines, 2019 In this work, the piezoresistive properties of heavily doped p-type 4H-SiC at room temperature were investigated innovatively. It was verified by a field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), and laser Raman spectroscopy
Yongwei Li +8 more
doaj +1 more source
Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication
Advanced Materials Interfaces, EarlyView.Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley +1 more source
Moving towards high carrier mobility power devices in silicon and silicon carbide [PDF]
, 2016 This thesis reports on recent progress regarding the characterization, design and fabrication of modern power semiconductor devices in Silicon (Si) as well as in the promising wide band gap material Silicon Carbide (SiC).
Rossmann, Harald R.
core +1 more source