Results 41 to 50 of about 181,039 (244)
A look underneath the SiO2/4H-SiC interface after N2O thermal treatments
Beilstein Journal of Nanotechnology, 2013 The electrical compensation effect of the nitrogen incorporation at the SiO2/4H-SiC (p-type) interface after thermal treatments in ambient N2O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance ...
Patrick Fiorenza +6 more
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On-State Voltage Drop Analytical Model for 4H-SiC Trench IGBTs
Crystals, 2022 In this paper, a model for the forward voltage drop in a 4H-SiC trench IGBT is developed. The analytical model is based on the 4H-SiC trench MOSFET voltage model and the hole-carrier concentration profile in the N-drift region for a conventional 4H-SiC ...
Yanjuan Liu, Dezhen Jia, Junpeng Fang
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Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures [PDF]
, 2018 The slow etching rate of conventional micro-machining processes is hindering the use of bulk silicon carbide materials in pressure sensing. This paper presents a 4H-SiC piezoresistive pressure sensor utilising a laser scribing approach for fast ...
Nguyen, Nam-Trung +7 more
core +1 more source
Holos, 2019 AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and
Masoud Sabaghi
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Simple method for the growth of 4H silicon carbide on silicon substrate
AIP Advances, 2016 In this study we report thermal evaporation technique as a simple method for the growth of 4H silicon carbide on p-type silicon substrate. A mixture of Si and C60 powder of high purity (99.99%) was evaporated from molybdenum boat.
M. Asghar +6 more
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Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer
Micromachines, 2019 In this work, the piezoresistive properties of heavily doped p-type 4H-SiC at room temperature were investigated innovatively. It was verified by a field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), and laser Raman spectroscopy
Yongwei Li +8 more
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Graphitization effects induced by thermal treatments of 4H-SiC
, 2023 4H-SiC is one of the most promising indirect wide-bandgap (3.3 eV) semiconductor for power devices used in the emerging area of high-voltage and high-temperature electronics as well as space and radiation harsh environments applications.
Salvatore Patanè +8 more
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Advanced Functional Materials, EarlyView.This paper presents a digital microfluidics‐based technique for transferring and reconfiguring soft nanomembranes. Laser‐machined nanothin membranes are picked up, transported, and aligned via tailored surface tension and the actuation of water droplets, enabling the development of flexible electronics, the integration of functional materials on 3D ...
Quang Anh Nguyen +15 more
wiley +1 more source
Integrated photoanode based on silicon carbide nanowire arrays for efficient water splitting
工程科学学报, 2023 In the context of rapid social development, it is urgent to address the increasingly prominent issues of fossil energy depletion and environmental pollution.
Lin-lin ZHOU +4 more
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Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique. [PDF]
, 2008 Anodic silicon dioxide (Si02) thin film is growth on p- and n-type silicon (Si) and p-type 4H-silicon carbide (SiC) substrate with the thickness ranging from 50-130 nm.
Cheong, Kuan Yew +2 more
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