High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode
IEEE Journal of the Electron Devices Society, 2021 This paper presents a single-event burnout (SEB) resistance method for 4H-SiC Junction Barrier Schottky Diode (JBS) under high bias voltage and linear energy transfer (LET) conditions.
Mao-Bin Li +5 more
doaj +1 more source
AIP Advances, 2019 We have investigated the relationship between the electrical properties and interfacial atomic structure of SiO2/4H-SiC interfaces, prepared by dry and wet thermal oxidation procedures with 4H-SiC (0001) and 4H-SiC (000-1) substrates, using extended x ...
Efi Dwi Indari +4 more
doaj +1 more source
Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad
Crystals, 2023 4H-SiC wafers are more likely to sustain a lower material removal rate (MRR) and severe subsurface damage in conventional chemical mechanical polishing (CMP) methods.
Jiyuan Zhong +6 more
doaj +1 more source
Effect of hexagonality on the pressure-dependent lattice dynamics of 4H-SiC
New Journal of Physics, 2022 The pressure-dependent lattice dynamics of 4H-SiC is investigated using diamond anvil cell, and compared with those of 3C- and 6H-SiC. It is found that both the zone-center longitudinal optical (LO) and transverse optical (TO) modes shift to higher ...
Junran Zhang +9 more
doaj +1 more source
Texture evolution in rhombohedral boron carbide films grown on 4H-SiC(0001) and 4H-SiC(0001) substrates by chemical vapor deposition [PDF]
, 2022 Boron carbide in its rhombohedral form (r-BxC), commonly denoted B4C or B13C2, is a well-known hard material, but it is also a potential semiconductor material.
Högberg, Hans +11 more
core +2 more sources
In situ high-pressure spectroscopic studies using moissanite (4H-SiC) anvils
AIP Advances, 2018 We examined the Raman scattering and IR absorption spectroscopy of 4H-SiC and its performance as an anvil material for high-pressure UV-visible absorption spectroscopic measurements.
Jinbo Zhang +7 more
doaj +1 more source
Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +3 more
core +1 more source
Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate
IEEE Journal of the Electron Devices Society, 2023 In this study, we investigate the deposition of high-k dielectric materials, namely Al2O3 and HfO2, using atomic layer deposition for 4H-SiC metal-oxide-semiconductor applications.
Hao Huang +3 more
doaj +1 more source
Electrical Conductivity Improvement of Point Defects in 4H-SiC
, 2023 Owing to its high melting temperature, the 4H-SiC substrate exhibits numerous defects that are difficult to remove, hindering the development of large-scale, high electrical conductivity 4H-SiC substrates. This study constructs and analyzes atomic models
Chih Shan Tan (5690210), Chih Shan Tan
core +1 more source
Spectroscopy studies of 4H-SiC [PDF]
Materials Research, 2003 Calculations of the total dielectric functions and the optical bandgap energy (OBGE) of 4HSiC were performed by the full-potential linear muffin-tin-orbital method. The results are compared to spectroscopic ellipsometry dielectric measurements agreeing closely over in a wide range of energies.
Oliveira, A.C. de +12 more
openaire +5 more sources