Results 21 to 30 of about 702 (151)

M-Center in Neutron-Irradiated 4H-SiC [PDF]

Crystals, 2021
We report on the metastable defects introduced in the n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation-induced defects. In addition to the carbon vacancy (Vc), silicon vacancy (Vsi) and carbon antisite-carbon
Ivana Capan, Tomislav Brodar, Takahiro Makino, Vladimir Radulovic, Luka Snoj   +4 more
openaire   +4 more sources

In situ high-pressure spectroscopic studies using moissanite (4H-SiC) anvils

AIP Advances, 2018
We examined the Raman scattering and IR absorption spectroscopy of 4H-SiC and its performance as an anvil material for high-pressure UV-visible absorption spectroscopic measurements.
Jinbo Zhang, Xinli Zhao, Zhipeng Yan, Ye Yuan, Xin Li, Cuiying Pei, Haiyan Zheng, Lin Wang   +7 more
doaj   +1 more source

Spectroscopy studies of 4H-SiC [PDF]

Materials Research, 2003
Calculations of the total dielectric functions and the optical bandgap energy (OBGE) of 4HSiC were performed by the full-potential linear muffin-tin-orbital method. The results are compared to spectroscopic ellipsometry dielectric measurements agreeing closely over in a wide range of energies.
Oliveira, A.C. de, Freitas Jr., J.A., Moore, W.J., Silva, A. Ferreira da, Pepe, I., Almeida, J. Souza de, Osório-Guillén, J.M., Ahuja, R., Persson, C., Järrendahl, K., Lindquist, O.P.A., Edwards, N.V., Wahab, Q.   +12 more
openaire   +5 more sources

Leakage Current Behavior in HfO₂/SiO₂/Al₂O₃ Stacked Dielectric on 4H-SiC Substrate

IEEE Journal of the Electron Devices Society, 2023
In this study, we investigate the deposition of high-k dielectric materials, namely Al2O3 and HfO2, using atomic layer deposition for 4H-SiC metal-oxide-semiconductor applications.
Hao Huang, Ying Wang, Ke-Han Chen, Xin-Xing Fei   +3 more
doaj   +1 more source

First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction

Advances in Condensed Matter Physics, 2018
First-principles calculation is employed to investigate atomic and electronic properties of Ge/SiC heterojunction with different Ge orientations. Based on the density functional theory, the work of adhesion, relaxation energy, density of states, and ...
Bei Xu, Changjun Zhu, Xiaomin He, Yuan Zang, Shenghuang Lin, Lianbi Li, Song Feng, Qianqian Lei   +7 more
doaj   +1 more source

Mechanical Load-Induced Atomic-Scale Deformation Evolution and Mechanism of SiC Polytypes Using Molecular Dynamics Simulation

Nanomaterials, 2022
Silicon carbide (SiC) is a promising semiconductor material for making high-performance power electronics with higher withstand voltage and lower loss. The development of cost-effective machining technology for fabricating SiC wafers requires a complete ...
Haoxiang Wang, Shang Gao, Renke Kang, Xiaoguang Guo, Honggang Li   +4 more
doaj   +1 more source

Fabrication of Photonic Resonators in Bulk 4H‐SiC [PDF]

Advanced Materials Technologies, 2021
AbstractThe design and engineering of photonic architectures, suitable to enhance, collect and guide light on chip is needed for applications in quantum photonics and quantum optomechanics. In this work, a Faraday cage‐based oblique angle etch method is applied to fabricate various functional photonic devices from 4H Silicon Carbide (SiC)—a material ...
Otto Cranwell Schaeper, Johannes E. Fröch, Sejeong Kim, Zhao Mu, Milos Toth, Weibo Gao, Igor Aharonovich   +6 more
openaire   +3 more sources

Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser

Crystals, 2022
The physical properties of silicon carbide (SiC) are excellent as a third-generation semiconductor. Nevertheless, diamond wire cutting has many drawbacks, including high loss, long cutting time and prolonged processing time.
Hanwen Wang, Qiu Chen, Yongping Yao, Linlin Che, Baitao Zhang, Hongkun Nie, Rongkun Wang   +6 more
doaj   +1 more source

Oxidation removal mechanism based on ReaxFF-MD in 4H-SiC CMP

Jin'gangshi yu moliao moju gongcheng
ObjectivesSilicon carbide has the advantages of high temperature stability, high electron mobility, and wide bandgap, and has been widely used in fields such as new energy vehicles, photovoltaics, and integrated circuits.
Tianyu ZHANG, Zirui WANG, Rui ZHU, Yang PENG, Yuguang ZHU, Shengjie YOU, Yongguang WANG, Chuanyang WANG   +7 more
doaj   +3 more sources

Design Considerations for 4H-SiC Lateral BJTs for High Temperature Logic Applications

IEEE Journal of the Electron Devices Society, 2018
4H-silicon carbide (SiC)-based bipolar integrated circuits (ICs) are suitable alternatives to silicon (Si)-based ICs in high temperature applications, owing to superior properties of 4H-SiC and the robust performance of SiC bipolar junction transistors ...
Amna Siddiqui, Hazem Elgabra, Shakti Singh   +2 more
doaj   +1 more source