Results 11 to 20 of about 240,009 (234)
Sodium diffusion in 4H-SiC [PDF]
APL Materials, 2014 Sodium diffusion has been studied in p-type 4H-SiC. Heat treatments have been performed from 1200 °C to 1800 °C for 1 min to 4 h. Secondary ion mass spectrometry has been used to measure the sodium distribution.
M. K. Linnarsson, A. Hallén
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Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review [PDF]
Energies, 2019 This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular, the work compares the benefits and drawbacks of different techniques to assess the physical parameters describing the electronic properties and the current transport at ...
Fiorenza Patrick +2 more
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A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide [PDF]
, 2012 The influence of polymorphism on nanometric machinability of single crystal silicon carbide (SiC) has been investigated through molecular dynamics (MD) simulation. The simulation results are compared with silicon as a reference material. Cutting hardness
Reuben, Robert L +2 more
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Investigation of the Young’s Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates [PDF]
Micromachines, 2019 The stress state is a crucial parameter for the design of innovative microelectromechanical systems based on silicon carbide (SiC) material. Hence, mechanical properties of such structures highly depend on the fabrication process. Despite significant progresses in thin-film growth and fabrication process, monitoring the strain of the suspended SiC thin-
Messaoud, Jaweb +7 more
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Thermal Evolution of Deuterium in 4H-Sic [PDF]
MRS Proceedings, 2002 Abstract4H-SiC samples were implanted at room temperature with 30 keV D+ ions at a dose of 5×1016 D+/cm2. Nuclear reaction analysis (NRA) and secondary ion mass spectroscopy (SIMS) measurements were performed to study the deuterium profiles after subsequent annealing at 1000-1250°C for 10min.Also, analytical techniques: RBS/C and thermal desorption ...
Delamare, Romain +5 more
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Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures [PDF]
Bulletin of the Polish Academy of Sciences Technical Sciences, 2016 Abstract The paper presents the results of characterization of MOS structures with aluminum oxide layer deposited by ALD method on silicon carbide substrates. The effect of the application of thin SiO2 buffer layer on the electrical properties of the MOS structures with Al2O3 layer has been examined. Critical electric field values at the level of 7.5–8
A. Taube +7 more
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An In-Situ TEM Study of High Temperature Helium Irradiation of 4H-SiC [PDF]
SiC is an excellent candidate material for use in fusion and fission nuclear reactors. The work done in this thesis aims to understand the behaviour of SiC under He irradiation at high temperatures.
Shen, Qiang
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Modified divacancies in 4H-SiC
Journal of Applied Physics, 2022 Divacancies near or at lattice defects in SiC, the PL5–PL7 photoluminescence centers, are known to have more favorable optical and spin properties for applications in quantum technology compared to the usual divacancies. These centers were previously predicted to be divacancies near stacking faults. Using electron paramagnetic resonance, we observe PL5,
N. T. Son +3 more
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M-Center in Neutron-Irradiated 4H-SiC [PDF]
Crystals, 2021 We report on the metastable defects introduced in the n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation-induced defects. In addition to the carbon vacancy (Vc), silicon vacancy (Vsi) and carbon antisite-carbon
Ivana Capan +4 more
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Thermal Behaviors and Optical Parametric Oscillation in 4H‐Silicon Carbide Integrated Platforms
Advanced Photonics Research, 2021 4H‐silicon carbide (SiC) integrated platforms have shown great potential in quantum and nonlinear photonics. However, the thermal properties of 4H‐SiC waveguides are still unknown, even though thermo‐optic effects can play an important role in ...
Xiaodong Shi +7 more
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