Results 11 to 20 of about 181,039 (244)

SiC pore surfaces: Surface studies of 4H-SiC(1-102) and 4H-SiC(-110-2)

Materials Science Forum, 2006
The morphology and atomic structure of 4H-SiC(1 (1) over bar 02) and 4H-SiC((1) over bar 10 (2) over bar) surfaces, i.e., the surfaces found in the triangular channels of porous 4H-SiC, have been investigated using atomic force microscopy, low-energy ...
Choyke, W. J., W.Y. Lee, Devaty, R. P., C. Coletti, Saddow, S. E., Coletti, C., Robert P. Devaty, Ulrich Starke, Starke, U., S.E. Saddow, W.J. Choyke, Lee, W. Y.   +11 more
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Optical properties of 4H–SiC

Journal of Applied Physics, 2002
The optical band gap energy and the dielectric functions of n-type 4H-SiC have been investigated experimentally by transmission spectroscopy and spectroscopic ellipsometry and theoretically by an ab initio full-potential linear muffin-tin-orbital method.
O. P. A. Lindquist, J. M. Osorio-Guillén, N. V. Edwards, Persson, Clas, Ahuja, Rajeev, I. Pepe, Wahab, Q., Q. Wahab, Osorio-Guillen, J. M., Lindquist, O. P. A., K. Järrendahl, B. Johansson, C. Persson, Pepe, I., A. Ferreira da Silva, Edwards, N. V., da Silva, A. F., Johansson, Börje, R. Ahuja, Jarrendahl, K.   +19 more
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Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review [PDF]

Energies, 2019
This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular, the work compares the benefits and drawbacks of different techniques to assess the physical parameters describing the electronic properties and the current transport at ...
Fiorenza Patrick, Giannazzo Filippo, Roccaforte Fabrizio   +2 more
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Investigation of the Young’s Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates [PDF]

Micromachines, 2019
The stress state is a crucial parameter for the design of innovative microelectromechanical systems based on silicon carbide (SiC) material. Hence, mechanical properties of such structures highly depend on the fabrication process. Despite significant progresses in thin-film growth and fabrication process, monitoring the strain of the suspended SiC thin-
Messaoud, Jaweb, Michaud, Jean-François, Certon, Dominique, Camarda, Massimo, Piluso, Nicolò, Barcella, Flavien, Alquier, Daniel, Colin, Laurent   +7 more
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Thermal Evolution of Deuterium in 4H-Sic [PDF]

MRS Proceedings, 2002
Abstract4H-SiC samples were implanted at room temperature with 30 keV D+ ions at a dose of 5×1016 D+/cm2. Nuclear reaction analysis (NRA) and secondary ion mass spectroscopy (SIMS) measurements were performed to study the deuterium profiles after subsequent annealing at 1000-1250°C for 10min.Also, analytical techniques: RBS/C and thermal desorption ...
Delamare, Romain, Ntsoenzok, E., Sauvage, T., Shiryaev, A., van Veen, A., Dubois, Ch.   +5 more
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Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures [PDF]

Bulletin of the Polish Academy of Sciences Technical Sciences, 2016
Abstract The paper presents the results of characterization of MOS structures with aluminum oxide layer deposited by ALD method on silicon carbide substrates. The effect of the application of thin SiO2 buffer layer on the electrical properties of the MOS structures with Al2O3 layer has been examined. Critical electric field values at the level of 7.5–8
A. Taube, M. Guziewicz, K. Kosiel, K. Gołaszewska-Malec, K. Król, R. Kruszka, E. Kamińska, A. Piotrowska   +7 more
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Modified divacancies in 4H-SiC

Journal of Applied Physics, 2022
Divacancies near or at lattice defects in SiC, the PL5–PL7 photoluminescence centers, are known to have more favorable optical and spin properties for applications in quantum technology compared to the usual divacancies. These centers were previously predicted to be divacancies near stacking faults. Using electron paramagnetic resonance, we observe PL5,
N. T. Son, D. Shafizadeh, T. Ohshima, I. G. Ivanov   +3 more
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Thermal Behaviors and Optical Parametric Oscillation in 4H‐Silicon Carbide Integrated Platforms

Advanced Photonics Research, 2021
4H‐silicon carbide (SiC) integrated platforms have shown great potential in quantum and nonlinear photonics. However, the thermal properties of 4H‐SiC waveguides are still unknown, even though thermo‐optic effects can play an important role in ...
Xiaodong Shi, Weichen Fan, Anders Kragh Hansen, Mingjun Chi, Ailun Yi, Xin Ou, Karsten Rottwitt, Haiyan Ou   +7 more
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Timing Performance Simulation for 3D 4H-SiC Detector

Micromachines, 2021
To meet the high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. Three-dimensional 4H-SiC detectors could potentially operate in a harsh radiation and room-temperature environment because of ...
Yuhang Tan, Tao Yang, Kai Liu, Congcong Wang, Xiyuan Zhang, Mei Zhao, Xiaochuan Xia, Hongwei Liang, Ruiliang Xu, Yu Zhao, Xiaoshen Kang, Chenxi Fu, Weimin Song, Zhenzhong Zhang, Ruirui Fan, Xinbo Zou, Xin Shi   +16 more
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Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]

, 2008
Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio, Furno, M., Ghione, Giovanni, FURNO M   +3 more
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