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Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures [PDF]
Bulletin of the Polish Academy of Sciences Technical Sciences, 2016 Abstract The paper presents the results of characterization of MOS structures with aluminum oxide layer deposited by ALD method on silicon carbide substrates. The effect of the application of thin SiO2 buffer layer on the electrical properties of the MOS structures with Al2O3 layer has been examined. Critical electric field values at the level of 7.5–8
A. Taube +7 more
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Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC
Micromachines, 2021 Single-crystal 4H-SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. A novel polishing technique that combines plasma electrolytic processing and mechanical polishing (PEP-MP)
Gaoling Ma +5 more
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Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation
Nanomaterials, 2023 Silicon carbide (SiC) is a promising material for thermoelectric power generation. The characterization of thermal transport properties is essential to understanding their applications in thermoelectric devices.
Kaili Yin +5 more
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Modified divacancies in 4H-SiC
Journal of Applied Physics, 2022 Divacancies near or at lattice defects in SiC, the PL5–PL7 photoluminescence centers, are known to have more favorable optical and spin properties for applications in quantum technology compared to the usual divacancies. These centers were previously predicted to be divacancies near stacking faults. Using electron paramagnetic resonance, we observe PL5,
N. T. Son +3 more
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Thermal Behaviors and Optical Parametric Oscillation in 4H‐Silicon Carbide Integrated Platforms
Advanced Photonics Research, 2021 4H‐silicon carbide (SiC) integrated platforms have shown great potential in quantum and nonlinear photonics. However, the thermal properties of 4H‐SiC waveguides are still unknown, even though thermo‐optic effects can play an important role in ...
Xiaodong Shi +7 more
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Timing Performance Simulation for 3D 4H-SiC Detector
Micromachines, 2021 To meet the high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. Three-dimensional 4H-SiC detectors could potentially operate in a harsh radiation and room-temperature environment because of ...
Yuhang Tan +16 more
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AIP Advances, 2019 We have investigated the relationship between the electrical properties and interfacial atomic structure of SiO2/4H-SiC interfaces, prepared by dry and wet thermal oxidation procedures with 4H-SiC (0001) and 4H-SiC (000-1) substrates, using extended x ...
Efi Dwi Indari +4 more
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High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode
IEEE Journal of the Electron Devices Society, 2021 This paper presents a single-event burnout (SEB) resistance method for 4H-SiC Junction Barrier Schottky Diode (JBS) under high bias voltage and linear energy transfer (LET) conditions.
Mao-Bin Li +5 more
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Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad
Crystals, 2023 4H-SiC wafers are more likely to sustain a lower material removal rate (MRR) and severe subsurface damage in conventional chemical mechanical polishing (CMP) methods.
Jiyuan Zhong +6 more
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Effect of hexagonality on the pressure-dependent lattice dynamics of 4H-SiC
New Journal of Physics, 2022 The pressure-dependent lattice dynamics of 4H-SiC is investigated using diamond anvil cell, and compared with those of 3C- and 6H-SiC. It is found that both the zone-center longitudinal optical (LO) and transverse optical (TO) modes shift to higher ...
Junran Zhang +9 more
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