Results 31 to 40 of about 27,208 (258)

An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S-Parameters Based on Prior Knowledge Neural Network

Micromachines, 2023
In this paper, an aging small-signal model for degradation prediction of microwave heterojunction bipolar transistor (HBT) S-parameters based on prior knowledge neural networks (PKNNs) is explored.
Lin Cheng, Hongliang Lu, Silu Yan, Chen Liu, Jiantao Qiao, Junjun Qi, Wei Cheng, Yimen Zhang, Yuming Zhang   +8 more
doaj   +1 more source

A novel radiation-dependence model of InP HBTs including gamma radiation effects

Nuclear Engineering and Technology, 2023
In order to predict the lifetime of InP Heterojunction Bipolar Transistor (HBT) devices and related circuits in the space radiation environment, a novel model including gamma radiation effects is proposed in this paper. Based on the analysis of radiation-
Jincan Zhang, Haiyi Cai, Na Li, Liwen Zhang, Min Liu, Shi Yang   +5 more
doaj   +1 more source

Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed

Micromachines
A SiC double-trench MOSFET embedded with a lower-barrier diode and an L-shaped gate-source in the gate trench, showing improved reverse conduction and an improved switching performance, was proposed and studied with 2-D simulations.
Yangjie Ou, Zhong Lan, Xiarong Hu, Dong Liu   +3 more
doaj   +1 more source

Fabrication of TiO2 nanotubes on Ti spheres using bipolar electrochemistry

Electrochemistry Communications, 2020
In this work, the anodization of Ti spheres using bipolar electrochemistry is reported for the first time. TiO2 nanotubes were found over the entire surface area of the Ti spheres when a square-wave potential was employed.
Hanna Sopha, Ludek Hromadko, Martin Motola, Jan M. Macak   +3 more
doaj   +1 more source

A direct bonding copper degradation monitoring method for insulated gate bipolar transistor modules: Boundary‐dependent thermal network combined with feedback control

High Voltage, 2023
The direct bonding copper (DBC) substrates of insulated gate bipolar transistor (IGBT) modules degrade inevitably under cycling thermo‐mechanical stress, causing potential threat to the reliability of IGBT modules. However, little attention has been paid
Xiaotong Zhang, Zhuolin Cheng, Xing Sun, Kangning Wu, Jianying Li   +4 more
doaj   +1 more source

Comparative study of materials for proton exchange membrane fuel cells bipolar plates: Electrical performance, durability, and automotive compatibility [PDF]

EPJ Web of Conferences
Bipolar plates are essential components of proton exchange membrane fuel cells because they contribute to current transport, reactant flow distribution, heat dissipation, and overall stack durability.
Elyoubi Meryem, Balli Lahcen, Atifi Adil, Hlimi Mohamed   +3 more
doaj   +1 more source

Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics

Nanomaterials
In this study, a novel silicon carbide (SiC) double-trench MOSFET (DT-MOS) combined Schottky barrier diode (SBD) and MOS-channel diode (MCD) is proposed and investigated using TCAD simulations. The integrated MCD helps inactivate the parasitic body diode
Peiran Wang, Chenglong Li, Chenkai Deng, Qinhan Yang, Shoucheng Xu, Xinyi Tang, Ziyang Wang, Wenchuan Tao, Nick Tao, Qing Wang, Hongyu Yu   +10 more
doaj   +1 more source

Enhancing Bubble Removal in Geometry‐Optimized Electrodes

Advanced Engineering Materials, EarlyView.
3D‐printed lattice electrodes outperform stochastic foams in alkaline water electrolysis despite 20%–25% lower surface area. Straight flow channels generate Venturi‐like bubble entrainment, suppressing gas accumulation that renders foam interiors electrochemically inactive.
Florian Wiesner, Peter Förster, Alexander Limper, Anselm Brodersen, Matthias Wessling, John Linkhorst   +5 more
wiley   +1 more source

An Improved SiC MOSFET With Integrated Schottky Contact Super Barrier Rectifier

IEEE Access
This study focuses on the SiC MOSFET with integrated Schottky contact super barrier rectifier (SiC SSBR-MOSFET) through the application of TCAD simulation methodologies.
Xintian Zhou, Jinglong Yan, Yun Tang, Dongqing Hu, Yu Wu, Yunpeng Jia, Bodian Li, Yuanfu Zhao   +7 more
doaj   +1 more source

Overview of monitoring methods of press‐pack insulated gate bipolar transistor modules under different package failure modes

IET Power Electronics, 2023
Press‐pack insulated gate bipolar transistor modules (PP‐IGBTs) have been widely used in high‐voltage and high‐power‐density applications, such as high‐voltage direct‐current (HVDC) converters, because of their advantages of low thermal resistance ...
Renkuan Liu, Hui Li, Ran Yao, Wei Lai, Wang Xiao, Hongtao Tan   +5 more
doaj   +1 more source