Results 11 to 20 of about 27,330 (257)

A Novel 6500 V SiC Trench MOSFET with Integrated Unipolar Diode for Improved Third Quadrant and Switching Characteristics

open access: yesMicromachines, 2023
A 6500 V SiC trench MOSFET with integrated unipolar diode (UD-MOS) is proposed to improve reverse conduction characteristics, suppress bipolar degradation, and reduce switching loss.
Hao Wu   +6 more
doaj   +1 more source

Status and perspectives of key materials for PEM electrolyzer

open access: yesNano Research Energy, 2022
Proton exchange membrane water electrolyzer (PEMWE) represents a promising technology for the sustainable production of hydrogen, which is capable of efficiently coupling to intermittent electricity from renewable energy sources (e.g., solar and wind ...
Kexin Zhang   +10 more
doaj   +1 more source

SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance

open access: yesIEEE Journal of the Electron Devices Society, 2020
In this paper, the SiC planar MOSFET with built-in reverse MOS-channel diode (SiC MCDMOSFET) is investigated utilizing TCAD simulation tools. When the device is working as a freewheeling diode, the operation of the parasitic body diode is suppressed ...
Xintian Zhou   +7 more
doaj   +1 more source

Arginyltransferase (Ate1) regulates the RGS7 protein level and the sensitivity of light-evoked ON-bipolar responses

open access: yesScientific Reports, 2021
Regulator of G-protein signaling 7 (RGS7) is predominately present in the nervous system and is essential for neuronal signaling involving G-proteins. Prior studies in cultured cells showed that RGS7 is regulated via proteasomal degradation, however no ...
Marie E. Fina   +6 more
doaj   +1 more source

Nucleation sites of expanded stacking faults detected by in operando x-ray topography analysis to design epitaxial layers for bipolar-degradation-free SiC MOSFETs

open access: yesAIP Advances, 2022
We investigated the nucleation sites of expanded single Shockley-type stacking faults (1SSFs) in a silicon carbide (SiC) metal–oxide–semiconductor field effect transistor (MOSFET) and demonstrated epitaxial layers designed for bipolar-degradation-free ...
Kumiko Konishi   +7 more
doaj   +1 more source

Potential regulation of bipolar redox-active molecules with fused conjugation for high-voltage symmetric organic redox flow batteries

open access: yesElectrochemistry Communications, 2023
Bipolar redox-active organic molecules (ROMs) are emerging as promising active materials as both anolyte and catholyte for symmetric organic redox flow batteries (ORFBs) which moderating the detrimental electrolyte crossover.
Ru Wang   +8 more
doaj   +1 more source

Radiation Degradation of Bipolar Transistor Current Gain

open access: yesActa Physica Polonica A, 2017
Spatial distribution of nonequilibrium minority charge carriers in bipolar transistors before and during the radiation exposure is described. Radiation-induced changes in the input and output characteristics and the current gain under the 60Co 1.2 MeV γ-rays were calculated.
Miskiewicz, S. A.   +4 more
openaire   +3 more sources

Analysis of the Influence of Component Degradation on Different Degradation Indexes of PEMFC

open access: yesEnergies, 2023
To study the effect of component degradation on different degradation indexes of the proton exchange membrane fuel cell (PEMFC), a novel model of the PEMFC based on component properties was established.
Lei Fan   +4 more
doaj   +1 more source

Corrosion and Materials Degradation in Electrochemical Energy Storage and Conversion Devices

open access: yesChemElectroChem, 2023
Research and development on electrochemical energy storage and conversion (EESC) devices, viz. fuel cells, supercapacitors and batteries, are highly significant in realizing carbon neutrality and a sustainable energy economy.
Dr. Viswanathan S. Saji
doaj   +1 more source

An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S-Parameters Based on Prior Knowledge Neural Network

open access: yesMicromachines, 2023
In this paper, an aging small-signal model for degradation prediction of microwave heterojunction bipolar transistor (HBT) S-parameters based on prior knowledge neural networks (PKNNs) is explored.
Lin Cheng   +8 more
doaj   +1 more source

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