Review on Modeling and Mitigation of Bipolar Degradation in 4H-SiC
Power Electronic Devices and ComponentsIt is now 25 years since the first observation of recombination-enhanced dislocation glide (REDG) in SiC p-i-n diodes. Since then, great progress has been made in understanding the mechanism behind up to a point where models emerged that can predict the ...
Jens Peter Konrath
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Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation [PDF]
Scientific Reports, 2022 4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar ...
Masashi Kato +4 more
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Degradation of Junction Parameters of an Electrically Stressed NPN Bipolar Transistor [PDF]
Active and Passive Electronic Components, 2001 The effect of an electrical ageing on npn bipolar transistor has been studied. The current gain decreases substantially and the electrical properties are discussed.
N. Toufik, F. Pélanchon, P. Mialhe
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A Si/SiC Heterojunction Double-Trench MOSFET with Improved Conduction Characteristics [PDF]
MicromachinesA Si/SiC heterojunction double-trench MOSFET with improved conduction characteristics is proposed. By replacing the N+ source and P-ch regions with silicon, the device forms a Si/SiC heterojunction that exhibits Schottky-like characteristics, effectively
Yi Kang +5 more
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Electrochemical degradation of trichloroethylene in aqueous solution by bipolar graphite electrodes [PDF]
Journal of Environmental Chemical Engineering, 2016 In this study, we tested the use of the bipolar electrodes to enhance electrochemical degradation of trichloroethylene (TCE) in an undivided, flow-through electrochemical reactor. The bipolar electrode forms when an electrically conductive material polarizes between feeder electrodes that are connected to a direct current source and, therefore, creates
Ljiljana Rajic +2 more
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Unipolar and Bipolar Plasma Electrolytic Oxidation (PEO) Coatings with Zeolite Additives for Photocatalytic Applications [PDF]
MoleculesPlasma electrolytic oxidation (PEO) enables the fabrication of multifunctional oxide coatings with embedded active phases, offering a promising route for durable photocatalytic surfaces in water purification. This study examines how the electrical regime
Kristina Mojsilović +3 more
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R&D of 3 300V SiC MOSFET With Embedded SBD
Zhongguo dianli, 2021 In this paper, a 3 300 V silicon carbide(SiC) metal-oxide-semiconductor field effect transistors (MOSFET) with embedded schottky barrier diodes(SBD) is developed, where the traditional MOSFET structure is integrated with a titanium-formed Schottky ...
Guoyou LIU +3 more
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A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance
Micromachines, 2023 In this article, a 1.2-kV-rated double-trench 4H-SiC MOSFET with an integrated low-barrier diode (DT-LBDMOS) is proposed which eliminates the bipolar degradation of the body diode and reduces switching loss while increasing avalanche stability.
Lijuan Wu +5 more
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A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching
Micromachines, 2023 A novel split-gate SiC MOSFET with an embedded MOS-channel diode for enhanced third-quadrant and switching performances is proposed and studied using TCAD simulations in this paper.
Ping Li +3 more
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Micromachines, 2023 A 6500 V SiC trench MOSFET with integrated unipolar diode (UD-MOS) is proposed to improve reverse conduction characteristics, suppress bipolar degradation, and reduce switching loss.
Hao Wu +6 more
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