Results 11 to 20 of about 40,768 (253)
An Experimental Investigation of MOSFET Intrisic Body Diode Performance [PDF]
2018 IEEE 27th International Symposium on Industrial Electronics (ISIE), 2018 In order to enable evaluation of power loss during both forward and reverse conduction of intrinsic body diodes in power MOSFETs, an experimental series is performed to derive a set of expressions to approximate performance. A set of relevant performance metrics are selected, and then tested over a range of devices.
Petersen, A., Stone, D.A., Foster, M.P.
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The Road to a Robust and Affordable SiC Power MOSFET Technology
Energies, 2021 This article provides a detailed study of performance and reliability issues and trade-offs in silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage variation across devices from the same vendor, instability of threshold ...
Hema Lata Rao Maddi +9 more
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Energies, 2021 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics.
Kyuhyun Cha, Kwangsoo Kim
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Energies, 2020 In this study, a novel 4H-SiC double-trench metal-oxide semiconductor field-effect transistor (MOSFET) with a side wall heterojunction diode is proposed and investigated by conducting numerical technology computer-aided design simulations.
Junghun Kim, Kwangsoo Kim
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Sensors, 2023 The value of a semiconductor’s diode temperature determines the correct operation of this element and its useful lifetime. One of the methods for determining the die temperature of a semiconductor diode is through the use of indirect thermographic ...
Arkadiusz Hulewicz +2 more
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The Effect of the Pillar Ripple on the Reverse Recovery in Superjunction MOSFETs
Power Electronic Devices and Components, 2022 Fast dI/dt and oscillations often are the causes of failure during the reverse-recovery of superjunction MOSFETs. These issues become more prominent with shrinking the pitch size of the superjunction in an attempt to improve the overall performance from ...
H. Kang, N. Donato, F. Udrea
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Investigation of 1200 V SiC MOSFETs’ Surge Reliability
Micromachines, 2019 In this work, the surge reliability of 1200 V SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) from various manufactures has been investigated in the reverse conduction mode.
Huan Li +4 more
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IEEE Journal of the Electron Devices Society, 2022 SiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN body diode of the MOSFET has relatively high forward voltage drop, considerable reverse ...
Dongyoung Kim +4 more
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Nasal septal Swell Body reduction a diode laser [PDF]
Russian Otorhinolaryngology, 2019 The nasal swell body (NSB) is a structure in the form of mucosa thickening from the nasal cavity bottom up to the middle nasal concha. The septal swell body was first described by Wustrow in the 17th century, he indicated it as an “intumescentia septi nasi anterior”; later, in 1900, P.
S. A. Karpishchenko +3 more
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A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching
Micromachines, 2023 A novel split-gate SiC MOSFET with an embedded MOS-channel diode for enhanced third-quadrant and switching performances is proposed and studied using TCAD simulations in this paper.
Ping Li +3 more
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