Results 11 to 20 of about 42,361 (184)
Materials Science Forum, 2023 SiC MOSFETs display reliability issues related to the quality of SiO2/SiC interface and bulk material due to the presence of near interface traps and point and extended material defects [1]. These material related issues give rise to a degradation of device reliability and ruggedness.
Lee, Geon Hee +3 more
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An Experimental Investigation of MOSFET Intrisic Body Diode Performance [PDF]
2018 IEEE 27th International Symposium on Industrial Electronics (ISIE), 2018 In order to enable evaluation of power loss during both forward and reverse conduction of intrinsic body diodes in power MOSFETs, an experimental series is performed to derive a set of expressions to approximate performance. A set of relevant performance metrics are selected, and then tested over a range of devices.
Petersen, A., Stone, D.A., Foster, M.P.
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Energies, 2020 In this study, a novel 4H-SiC double-trench metal-oxide semiconductor field-effect transistor (MOSFET) with a side wall heterojunction diode is proposed and investigated by conducting numerical technology computer-aided design simulations.
Junghun Kim, Kwangsoo Kim
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EnergiesPower metal-oxide-semiconductor field-effect transistors (MOSFETs) provide numerous advantages and are widely utilized in various power circuits. The junction temperature plays a critical role in determining the reliability, performance, and operational ...
Xueli Zhu +8 more
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The Road to a Robust and Affordable SiC Power MOSFET Technology
Energies, 2021 This article provides a detailed study of performance and reliability issues and trade-offs in silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage variation across devices from the same vendor, instability of threshold ...
Hema Lata Rao Maddi +9 more
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Energies, 2021 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics.
Kyuhyun Cha, Kwangsoo Kim
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Sensors, 2023 The value of a semiconductor’s diode temperature determines the correct operation of this element and its useful lifetime. One of the methods for determining the die temperature of a semiconductor diode is through the use of indirect thermographic ...
Arkadiusz Hulewicz +2 more
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Performance improvement of three-body radiative diode driven by graphene surface plasmon polaritons
, 2023 As an analogue to electrical diode, a radiative thermal diode allows radiation to transfer more efficiently in one direction than in the opposite direction by operating in a contactless mode.
He-Ping Tan (3959759) +5 more
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Junction temperature monitoring for cascode GaN devices using the Si MOSFET's body diode voltage drop [PDF]
, 2023 In this paper, a new online junction temperature monitoring method is proposed for cascode GaN devices using the body diode of Si MOSFET. The reverse current during soft-switching mode is utilized to extract the voltage drop of the Si MOSFET's body diode.
Francesco Iannuzzo +3 more
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Laser microdissection as a new approach to prefertilization genetic diagnosis [PDF]
, 2000 The genetic status of oocytes can be determined by polar body (PB) analysis. Following PB extraction, a genetic evaluation is performed. As each PB contains the complementary genetic material of the oocyte, PB analysis reveals information about its ...
Schütze, Karin +2 more
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