Results 21 to 30 of about 40,768 (253)
Study on Anti-surge Capacity of Body Diode of 1 200 V SiC MOSFET
机车电传动, 2021 The anti-surge capability of the body diode of 1 200 V planar, double trench and asymmetric trench SiC MOSFETs was compared and analyzed by experiment.
Chao CHEN +3 more
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Superconducting gravimeters based on advanced nanomaterials and quantum neural network
Sistemnì Doslìdženâ ta Informacìjnì Tehnologìï, 2022 The paper is focused on a new concept of a cryogenic-optical sensor intended for use in the space industry, geodynamics, and fundamental experiments. The basis of the sensor is a magnetic suspension with a levitating test body, a high-precision optical ...
Vitaly Yatsenko +2 more
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AIP Advances, 2020 This study examines the impact of the different diode characteristics on the magnetic hysteretic and iron loss properties of a conventional non-oriented (NO) silicon steel sheet core under silicon carbide (SiC) inverter excitation.
Atsushi Yao +5 more
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机车电传动, 2021 For super junction field effect transistor (SJ-MOSFET), two device structures with different p-pillar morphology of multiple epitaxial ion implantation and deep groove etching were established.
Maosen TANG +5 more
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Study on Surge Capacity of SiC MOSFET Based on Channel State
机车电传动, 2021 The reliability of the SiC MOSFET body diode has been greatly improved due to technological progress, and it has replaced freewheeling diodes in some fields and modules. Based on the surge current test, the non-repetitive surge current characteristics of
Heli MENG +3 more
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International Journal of Engineering Materials and Manufacture, 2019 Diode components used in the electronic relay packages of avionics of a weapon system had been found corroded. Two sets of the complete assembly of the damaged diode parts consisting of diode body, plain washer, spring washer and mounting nuts were ...
Mrityunjoy Hazra, Satyapal Singh
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MicromachinesThe parameter degradation and failure mechanisms of 1200 V asymmetric trench-type (AT) silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) under various single and repetitive surge currents, with various gate bias voltages (
Menglin Yan +7 more
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SensorsSilicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are a future trend in traction inverters in electric vehicles (EVs), and their thermal safety is crucial.
Yansong Lu +6 more
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Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction
Nanoscale Research Letters, 2022 A vertical GaN power MOSFET featuring an integrated fin-shaped non-junction diode (FDMOS) is proposed to improve reverse conduction and switching characteristics.
Tao Sun +7 more
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Body Diode of 1.2kV SiC MOSFET: Unipolar and Bipolar Operation
Materials Science Forum, 2023 In this work, we investigate the Body Diode (BD) of a 40mOhm, 1.2kV SiC MOSFETs. We performed DC measurements and switching measurements, at Room Temperature (RT) and High Temperature (HT) (T=175°C), together with TCAD simulation and calibration. In switching measurements, we focused on the low side (LS) switch turn-on event, i.e., the BD turn-off ...
Thanh Toan Pham +2 more
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