Results 21 to 30 of about 3,407,669 (289)
A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching
Micromachines, 2023 A novel split-gate SiC MOSFET with an embedded MOS-channel diode for enhanced third-quadrant and switching performances is proposed and studied using TCAD simulations in this paper.
Ping Li +3 more
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High power diode lasers. Introduction
, 2022 S.1-3The motivation for writing this book is at least threefold: the extremely promising laser characteristics of high-power diode lasers; their vast application potential in production processes like welding, soldering, polymer joining, cutting, and ...
Poprawe, R.
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Study on Anti-surge Capacity of Body Diode of 1 200 V SiC MOSFET
机车电传动, 2021 The anti-surge capability of the body diode of 1 200 V planar, double trench and asymmetric trench SiC MOSFETs was compared and analyzed by experiment.
Chao CHEN +3 more
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Superconducting gravimeters based on advanced nanomaterials and quantum neural network
Sistemnì Doslìdženâ ta Informacìjnì Tehnologìï, 2022 The paper is focused on a new concept of a cryogenic-optical sensor intended for use in the space industry, geodynamics, and fundamental experiments. The basis of the sensor is a magnetic suspension with a levitating test body, a high-precision optical ...
Vitaly Yatsenko +2 more
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AIP Advances, 2020 This study examines the impact of the different diode characteristics on the magnetic hysteretic and iron loss properties of a conventional non-oriented (NO) silicon steel sheet core under silicon carbide (SiC) inverter excitation.
Atsushi Yao +5 more
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Investigation into the integration of a resonant tunnelling diode and an optical communications laser: model and experiment [PDF]
, 2007 A resonant tunnelling diode has been monolithically integrated with an optical communications laser [the resonant tunnelling diode (RTD-LD)] to form a simple optoelectronic integrated circuit (OEIC) that is a novel bistable device suitable for an optical
T.J. Slight +3 more
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机车电传动, 2021 For super junction field effect transistor (SJ-MOSFET), two device structures with different p-pillar morphology of multiple epitaxial ion implantation and deep groove etching were established.
Maosen TANG +5 more
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Measurements of the indium hyperfine structure in an atmospheric-pressure flame by use of diode-laser-induced fluorescence [PDF]
, 2004 We report on what we believe is the first demonstration of laser-induced fluorescence (LIF) in flames by use of diode lasers. Indium atoms seeded into an atmospheric-pressure flame at trace concentrations are excited by a blue GaN laser operating near ...
Burns, I.S., Kaminski, C.F., Hult, J.
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Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions
EnergiesThis paper investigates the behavior of SiC MOSFETs body diode reverse recovery as a function of different operating conditions. The knowledge of their effects is crucial to properly designing and driving power converters based on SiC devices, in order ...
Giuseppe Pennisi +7 more
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Study on Surge Capacity of SiC MOSFET Based on Channel State
机车电传动, 2021 The reliability of the SiC MOSFET body diode has been greatly improved due to technological progress, and it has replaced freewheeling diodes in some fields and modules. Based on the surge current test, the non-repetitive surge current characteristics of
Heli MENG +3 more
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