Results 31 to 40 of about 42,361 (184)

Correlation between OCVD carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of SiC power MOSFETs [PDF]

, 2020
The reverse recovery (RR) behavior of SiC MOSFET body diode is of great importance in power application, where these devices are used in a wide range of operating temperatures.
Sapienza S., Sozzi G., Cova P., Verrini G., Chiorboli G., Santoro D., Delmonte N.   +6 more
core   +1 more source

Study on Surge Capacity of SiC MOSFET Based on Channel State

机车电传动, 2021
The reliability of the SiC MOSFET body diode has been greatly improved due to technological progress, and it has replaced freewheeling diodes in some fields and modules. Based on the surge current test, the non-repetitive surge current characteristics of
Heli MENG, Erping DENG, Wenjie WANG, Yongzhang HUANG   +3 more
doaj  

Failure Analysis of Diode Components of Electronic Relay Packages Via Thorough Microstructural Characterization

International Journal of Engineering Materials and Manufacture, 2019
Diode components used in the electronic relay packages of avionics of a weapon system had been found corroded. Two sets of the complete assembly of the damaged diode parts consisting of diode body, plain washer, spring washer and mounting nuts were ...
Mrityunjoy Hazra, Satyapal Singh
doaj   +1 more source

Body Diode of 1.2kV SiC MOSFET: Unipolar and Bipolar Operation

Materials Science Forum, 2023
In this work, we investigate the Body Diode (BD) of a 40mOhm, 1.2kV SiC MOSFETs. We performed DC measurements and switching measurements, at Room Temperature (RT) and High Temperature (HT) (T=175°C), together with TCAD simulation and calibration. In switching measurements, we focused on the low side (LS) switch turn-on event, i.e., the BD turn-off ...
Thanh Toan Pham, Jimmy Franchi, Martin Domeij   +2 more
openaire   +1 more source

Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions

Energies
This paper investigates the behavior of SiC MOSFETs body diode reverse recovery as a function of different operating conditions. The knowledge of their effects is crucial to properly designing and driving power converters based on SiC devices, in order ...
Giuseppe Pennisi, Mario Pulvirenti, Luciano Salvo, Angelo Giuseppe Sciacca, Salvatore Cascino, Antonio Laudani, Nunzio Salerno, Santi Agatino Rizzo   +7 more
doaj   +1 more source

Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics

Sensors
Silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are a future trend in traction inverters in electric vehicles (EVs), and their thermal safety is crucial.
Yansong Lu, Yijun Ding, Jia Li, Hao Yin, Xinlian Li, Chong Zhu, Xi Zhang   +6 more
doaj   +1 more source

Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction

Nanoscale Research Letters, 2022
A vertical GaN power MOSFET featuring an integrated fin-shaped non-junction diode (FDMOS) is proposed to improve reverse conduction and switching characteristics.
Tao Sun, Xiaorong Luo, Jie Wei, Kemeng Yang, Siyu Deng, Zhijia Zhao, Yanjiang Jia, Bo Zhang   +7 more
doaj   +1 more source

Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate

IEEE Journal of the Electron Devices Society, 2019
We report on the implementation of dynamic body-bias technique to improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) with the successful integration of body-diode.
Isra Mahaboob, Michael Yakimov, Kasey Hogan, Emma Rocco, Sean Tozier, F. Shahedipour-Sandvik   +5 more
doaj   +1 more source

Aggregating multiple body sensors for analysis in sports [PDF]

, 2008
Real time monitoring of the wellness of sportspersons, during their sporting activity and training, is important in order to maximise performance during the sporting event itself and during training, as well as being important for the health of the ...
Zhang, Ke, Morris, Deirdre, O'Connor, Noel E., Lau, King-Tong, Kelly, Philip, Smeaton, Alan F., Moran, Kieran, Moyna, Niall, Diamond, Dermot, O\u27Connor, Noel E.   +9 more
core  

Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs

, 2022
S.901-904In this study, the influence of the gate-source voltage on the forward conduction properties of the body-diode in SiC-MOSFETs is demonstrated experimentally and analyzed by numerical simulations.
Enduschat, A., Huerner, A., Frey, L., Erlbacher, T., Heckel, T., Bauer, A.J.   +5 more
core   +1 more source