Results 51 to 60 of about 42,361 (184)
, 2018 International audienceAn antiparallel PiN diode is present in the structure of the SiC Power MOSFET. For simplicity, increased module current ratings, and cost reasons, it sometimes may be preferable to use this diode rather than to add an external ...
Lefebvre, Stéphane +4 more
core +1 more source
Investigating the reliability of SiC MOSFET body diodes using Fourier series modelling [PDF]
2014 IEEE Energy Conversion Congress and Exposition (ECCE), 2014 Using the Fourier series solution to the ambipolar diffusion equation, the robustness of the body diodes of SiC MOSFETs during reverse recovery has been studied. Parasitic bipolar latch-up during the reverse recovery of the body diode is a possible if there is sufficient base current and voltage drop across the body resistance to forward bias the ...
Bonyadi, Roozbeh +5 more
openaire +3 more sources
A flexible ultra-thin-body SOI single-photon avalanche diode
, 2013 The world’s first flexible ultra-thin-body SOI single-photon avalanche diode (SPAD) is reported with peak photon detection probability (PDP) at 11%, dark count rate (DCR) around 20kHz and negligible afterpulsing and cross-talk. It compares favorably with
Edoardo Charbon +3 more
core +1 more source
Surgical Techniques Development, 2013 A wide range of therapeutic options is available to treat vascular anomalies, arising from the systemic therapies to surgery or using lasers. The purpose of this preliminary study is to assess the effectiveness of treatment of vascular anomalies anywhere
Luigino Santecchia +4 more
doaj +1 more source
Investigation on Degradation of SiC MOSFET Under Surge Current Stress of Body Diode
, 2019 Eliminating antiparallel silicon carbide Schottky barrier diode (SiC SBD) and making use of the intrinsic body diode of SiC metal-oxide-semiconductor-field-effect transistor (SiC MOSFET) offer a cost-effectiveness solution without obviously sacrificing ...
Jun Wang (5906) +7 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2018 In this paper, the diode characteristics of our newly proposed super-steep subthreshold slope “PN-body tied (PNBT) silicon-on-insulator field-effect transistor” are presented, and compared with conventional diodes. We report that the device
Takayuki Mori +5 more
doaj +1 more source
IEEE AccessThis paper presents a reconfigurable antenna that can be applied to sub-6 GHz, millimeter-wave band and D-band for wearable mobile watches. Owing to the compact size of wearable devices, their close proximity to the human body, and the requirement for ...
Ming-An Chung +2 more
doaj +1 more source
SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance
IEEE Journal of the Electron Devices Society, 2020 In this paper, the SiC planar MOSFET with built-in reverse MOS-channel diode (SiC MCDMOSFET) is investigated utilizing TCAD simulation tools. When the device is working as a freewheeling diode, the operation of the parasitic body diode is suppressed ...
Xintian Zhou +7 more
doaj +1 more source
Self-driven scheme for synchronous rectifier having no body diode
, 2005 A voltage converter uses a component such as a JFET or four-terminal power MOSFET having no body diode and exhibiting no body diode conduction characteristic as a synchronous rectifier to reduce switching losses and body diode conduction losses and to ...
core
MicromachinesIn this paper, a novel asymmetric trench SiC MOSFET with a Poly-Si/SiC heterojunction diode (HJD-ATMOS) is designed to improve its reverse conduction characteristics and switching performance.
Yiren Yu +4 more
doaj +1 more source