4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance [PDF]
In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics.
Yanjuan Liu, Dezhen Jia, Junpeng Fang
doaj +2 more sources
Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs [PDF]
This study explores the temperature dependence of reverse-recovery behavior in superjunction metal-oxide-semiconductor field-effect-transistors (MOSFETs) using experiments and Technology Computer-Aided Design (TCAD) simulations. Results show that at 145 °
Wenrong Cui +6 more
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A Trench Heterojunction Diode-Integrated 4H-SiC LDMOS with Enhanced Reverse Recovery Characteristics [PDF]
In this paper, a novel 4H-SiC LDMOS structure with a trench heterojunction in the source (referred as to THD-LDMOS) is proposed and investigated for the first time, to enhance the reverse recovery performance of its parasitic diode. Compared with 4H-SiC,
Yanjuan Liu, Fangfei Bai, Junpeng Fang
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Channel and Body-Diode Conduction Characteristics in 4H-SiC MOSFETs Under Third-Quadrant Switching Conditions [PDF]
The third-quadrant operation of silicon carbide (SiC) MOSFETs is investigated from the perspective of carrier transport, focusing on the interaction between two parallel conduction paths.
Xiaobing Huang +3 more
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Energy consumption and recovery in reverse osmosis
Energy consumption is a key factor which influences the freshwater production cost in reverse osmosis (RO) process. Energy recovery and reuse options have already been very well explored in the current desalination industry. Achieving minimum theoretical specific energy consumption for water recovery is not feasible due to effects of concentration ...
Veera Gnaneswar Gude
exaly +2 more sources
Biofilm Removal by Reversible Shape Recovery of the Substrate [PDF]
Bacteria can colonize essentially any surface and form antibiotic resistant biofilms, which are multicellular structures embedded in an extracellular matrix secreted by the attached cells. To develop better biofilm control technologies, we recently demonstrated that mature biofilms can be effectively removed through on-demand shape recovery of a shape ...
Sang Won Lee +5 more
openaire +2 more sources
Failure analysis of high voltage thyristor under impulse during reverse recovery period
To acquire the characteristic parameters which demonstrate the state of high voltage thyristor for clarifying its failure mechanism, an experiment platform which can not only generate high voltage pulses to thyristor at different moments during reverse ...
YE Mingtian +4 more
doaj +1 more source
Introduction. Adequate modeling of semiconductor devices with a p–n-junction in reverse bias represents a relevant research problem. The existing quasistatic and non-quasistatic models fail to provide a satisfactory description for the dependence of ...
G. M. Shevchenko, E. V. Semyonov
doaj +1 more source
A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD)
Achieving low conduction loss and good channel mobility is crucial for SiC MOSFETs. However, basic planar SiC MOSFETs provide challenges due to their high density of interface traps and significant gate-to-drain capacitance.
Hongyu Cheng +5 more
doaj +1 more source
Cell recovery by reversal of ferroptosis [PDF]
ABSTRACT The classical view of cell death has long assumed that, once initiated, the dying process is irreversible. However, recent studies reveal that recovery of dying cells can actually occur, even after initiation of a cell suicide process called apoptosis. This discovery raised fundamental key questions about which forms of the cell
Ho Man Tang, Ho Lam Tang
openaire +3 more sources

