Results 11 to 20 of about 357,861 (309)

Analysis and Test of Reverse Recovery Performance of Fast Recovery Diode in IGCT-MMC [PDF]

open access: yesZhongguo dianli, 2021
The reverse recovery characteristics of the diode plays an important role in IGCT-MMC. This paper firstly introduces the reverse recovery characteristics of the fast recovery diode.
Yantao LOU   +6 more
doaj   +2 more sources

A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars

open access: yesCrystals, 2022
In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance.
Rongyu Gao   +6 more
doaj   +1 more source

High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode

open access: yesEnergies, 2022
Built-in freewheeling diode metal–oxide–semiconductor field-effect transistors (MOSFETs) that ensure high performance and reliability at high voltages are crucial for chip integration.
Jaeyeop Na, Minju Kim, Kwangsoo Kim
doaj   +1 more source

User Recovery and Reversal in Interactive Systems [PDF]

open access: yesACM Transactions on Programming Languages and Systems, 1984
Interactive systems, such as editors and program development environments, should be explicitly support recovery facilities that permit a user to reverse the effects of past actions and to restore an object to a prior state. A model for interactive systems is presented that allows recovery to be defined precisely and user and system responsibilities to
James E. Archer Jr.   +2 more
openaire   +1 more source

Reverse Recovery of 50 V Silicon Charge Plasma PIN Diode

open access: yesIEEE Access, 2020
In this article, a novel approach is used for the first time to design a high-voltage PIN diode without any chemical doping process of cathode and anode region.
Sara Hahmady, Stephen Bayne
doaj   +1 more source

A Power MOSFET With P-Base Schottky Diode and Built-In Channel Diode for Fast Reverse Recovery

open access: yesIEEE Journal of the Electron Devices Society, 2021
A power MOSFET with P-base Schottky diode and built-in channel diode is proposed and numerically investigated in this article. The P-base Schottky diode formed by the P-base Schottky contact is in reverse series with the P-base/N-drift junction diode ...
Ping Li   +3 more
doaj   +1 more source

Combining reverse end-to-side neurorrhaphy with rapamycin treatment on chronically denervated muscle in rats [PDF]

open access: yesJournal of Integrative Neuroscience, 2021
This preliminary research determines whether a combination of reverse end-to-side neurorrhaphy and rapamycin treatment achieves a better functional outcome than a single application after prolonged peripheral nerve injury.
Yijian Chen   +6 more
doaj   +1 more source

Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n/n+-Buffer Layer

open access: yesMicromachines, 2022
In this paper, a novel silicon super-junction (SJ) MOSFET embedded with a soft reverse recovery body diode is proposed and studied by numerical simulation.
Zhi Lin   +4 more
doaj   +1 more source

Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter

open access: yesMicromachines, 2023
In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics.
Wei Wu   +5 more
doaj   +1 more source

Novel High Step-Up DC–DC Converter with Three-Winding-Coupled-Inductors and Its Derivatives for a Distributed Generation System

open access: yesEnergies, 2018
A novel step-up DC-DC converter with a three-winding-coupled-inductor which integrates a coupled-inductor and voltage-boost techniques for a distributed generation system is proposed in this paper.
Yanying Gao, Hongchen Liu, Jian Ai
doaj   +1 more source

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