Results 1 to 10 of about 153,640 (153)
A Trench Heterojunction Diode-Integrated 4H-SiC LDMOS with Enhanced Reverse Recovery Characteristics [PDF]
MicromachinesIn this paper, a novel 4H-SiC LDMOS structure with a trench heterojunction in the source (referred as to THD-LDMOS) is proposed and investigated for the first time, to enhance the reverse recovery performance of its parasitic diode. Compared with 4H-SiC,
Yanjuan Liu, Fangfei Bai, Junpeng Fang
doaj +4 more sources
Channel and Body-Diode Conduction Characteristics in 4H-SiC MOSFETs Under Third-Quadrant Switching Conditions [PDF]
MicromachinesThe third-quadrant operation of silicon carbide (SiC) MOSFETs is investigated from the perspective of carrier transport, focusing on the interaction between two parallel conduction paths.
Xiaobing Huang +3 more
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New Power MOSFET with Beyond-1D-Limit RSP-BV Trade-Off and Superior Reverse Recovery Characteristics. [PDF]
Materials (Basel), 2020 The application of conventional power metal-oxide-semiconductor field-effect transistor (MOSFET) is limited by the famous one-dimensional “silicon limit” (1D-limit) in the trade-off relationship between specific on-resistance (RSP) and breakdown voltage (BV). In this paper, a new power MOSFET architecture is proposed to achieve a beyond-1D-limit RSP-BV
Zhang M, Li B, Wei J.
europepmc +4 more sources
IEEE Access, 2022 This paper proposes a three-level dual-buck inverter (DBI) that reduces reverse recovery current and compensates reactive power. To reduce the reverse recovery problem of main switching diodes in the DBI, the auxiliary circuit consisting of diodes and ...
Sanghun Han, Younghoon Cho
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Electronics (Switzerland)As application conditions become increasingly demanding and usage becomes more aggressive, the performance of traditional insulated gate bipolar transistor (IGBT) and fast recovery diode (FRD) systems can no longer meet the required specifications. In these systems, FRDs are required to carry load current and allow current to return from the load to ...
Yameng Sun, Anning Chen, Xuehan Li
exaly +2 more sources
Case Studies in Chemical and Environmental EngineeringThe rapid growth of industrial zones has increased wastewater generation and placed pressure on industrial water supplies. This study evaluated the performance, membrane fouling, and energy consumption of a lab-scale RO system at different wastewater ...
Cong-Sac Tran +7 more
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Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter
Micromachines, 2023 In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics.
Wei Wu +5 more
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Analysis and Test of Reverse Recovery Performance of Fast Recovery Diode in IGCT-MMC
Zhongguo dianli, 2021 The reverse recovery characteristics of the diode plays an important role in IGCT-MMC. This paper firstly introduces the reverse recovery characteristics of the fast recovery diode.
Yantao LOU +6 more
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4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance
Micromachines, 2023 In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics.
Yanjuan Liu, Dezhen Jia, Junpeng Fang
doaj +1 more source
A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode
IEEE Journal of the Electron Devices Society, 2021 A novel split-gate-trench MOSFET integrated with normal gate and built-in channel diode (BCD) in the same trench is proposed and simulated with Sentaurus TCAD in this paper.
Xinyu Li +7 more
doaj +1 more source