Results 21 to 30 of about 7,209,798 (282)
A novel dual switch DC/DC converter without reverse recovery problem
The traditional dual switch forward converter has a very large filter element and all the diodes on the primary and secondary sideshow the problem of reverse recovery and voltage oscillation.
Liying Zhou +3 more
doaj +1 more source
Recovery ... reporting overview; Connecticut recovery; CT recovery ... progress
Updated quarterly; Began in 2009.; Title from home page last modified 10/29/2009 (viewed Oct. 29, 2009).; At head of title: State of Connecticut.; "On October 1, state agencies that have received Recovery Act funds began reporting to the federal ...
core +5 more sources
Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be ~ 1.3 × 106 cm ...
Hong Gu +7 more
doaj +1 more source
The ESD effects on the E-mode AlGaN/GaN high-electron mobility transistors (HEMTs) with p-GaN gate are investigated under repetitive TLP pulses. Firstly, the degradation and recovery of output, transfer characteristics, gate-leakage characteristics and ...
X. B. Xu +8 more
doaj +1 more source
Thermal performance characterisation of a reverse-flow energy recovery ventilator for a residential building application [PDF]
The European Union’s 2020 and 2030 sustainable energy policies seek significant reductions in both energy consumption and carbon emissions. These policies demand a greater use of energy efficient technologies and a transition away from fossil fuels. This
Hunt David +4 more
doaj +1 more source
Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode
A 4H-SiC MOSFET with p-type region injection and integrated split gate and heterojunction diode is proposed in this paper. Compared with the conventional MOSFET, the proposed structure has a lower on-resistance and switching loss.
Hai-Yong Xu +3 more
doaj +1 more source
A 6500 V SiC trench MOSFET with integrated unipolar diode (UD-MOS) is proposed to improve reverse conduction characteristics, suppress bipolar degradation, and reduce switching loss.
Hao Wu +6 more
doaj +1 more source
Reverse Food Logistics during the Product Life Cycle [PDF]
This study aimed to examine reverse logistics across the food product life cycle. Based on a literature review of reverse logistics factors in food industry a set of measures were derived.
Vlachos, IP, Vlachos, Ilias
core +1 more source
Reverse Recovery of 50 V Silicon Charge Plasma PIN Diode
In this article, a novel approach is used for the first time to design a high-voltage PIN diode without any chemical doping process of cathode and anode region.
Sara Hahmady, Stephen Bayne
doaj +1 more source
A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region
A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation.
Jongwoon Yoon, Jaeyeop Na, Kwangsoo Kim
doaj +1 more source

