Results 21 to 30 of about 153,739 (252)

Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes

Nanoscale Research Letters, 2019
Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be ~ 1.3 × 106 cm ...
Hong Gu, Feifei Tian, Chunyu Zhang, Ke Xu, Jiale Wang, Yong Chen, Xuanhua Deng, Xinke Liu   +7 more
doaj   +1 more source

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

IEEE Journal of the Electron Devices Society, 2021
The ESD effects on the E-mode AlGaN/GaN high-electron mobility transistors (HEMTs) with p-GaN gate are investigated under repetitive TLP pulses. Firstly, the degradation and recovery of output, transfer characteristics, gate-leakage characteristics and ...
X. B. Xu, B. Li, Y. Q. Chen, Z. H. Wu, Z. Y. He, L. Liu, S. Z. He, Y. F. En, Y. Huang   +8 more
doaj   +1 more source

Thermal performance characterisation of a reverse-flow energy recovery ventilator for a residential building application [PDF]

E3S Web of Conferences, 2019
The European Union’s 2020 and 2030 sustainable energy policies seek significant reductions in both energy consumption and carbon emissions. These policies demand a greater use of energy efficient technologies and a transition away from fossil fuels. This
Hunt David, Mac Suibhne Naoise, Dimache Laurentiu, McHugh David, Lohan John   +4 more
doaj   +1 more source

A Novel 6500 V SiC Trench MOSFET with Integrated Unipolar Diode for Improved Third Quadrant and Switching Characteristics

Micromachines, 2023
A 6500 V SiC trench MOSFET with integrated unipolar diode (UD-MOS) is proposed to improve reverse conduction characteristics, suppress bipolar degradation, and reduce switching loss.
Hao Wu, Xuan Li, Xiaochuan Deng, Yangyang Wu, Jiawei Ding, Wensong Peng, Bo Zhang   +6 more
doaj   +1 more source

Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode

IEEE Journal of the Electron Devices Society, 2022
A 4H-SiC MOSFET with p-type region injection and integrated split gate and heterojunction diode is proposed in this paper. Compared with the conventional MOSFET, the proposed structure has a lower on-resistance and switching loss.
Hai-Yong Xu, Ying Wang, Meng-Tian Bao, Fei Cao   +3 more
doaj   +1 more source

Reverse Recovery of 50 V Silicon Charge Plasma PIN Diode

IEEE Access, 2020
In this article, a novel approach is used for the first time to design a high-voltage PIN diode without any chemical doping process of cathode and anode region.
Sara Hahmady, Stephen Bayne
doaj   +1 more source

A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region

Energies, 2021
A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation.
Jongwoon Yoon, Jaeyeop Na, Kwangsoo Kim
doaj   +1 more source

Dynamic Switching Characteristics of 1 A Forward Current $\boldsymbol{\beta}$ -Ga₂O₃ Rectifiers

IEEE Journal of the Electron Devices Society, 2019
An inductive load test circuit was used to measure the switching performance of fieldplated edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85 × 10-3cm2 area) and an absolute forward current of 1 A
Jiancheng Yang, Fan Ren, Yen-Ting Chen, Yu-Te Liao, Chin-Wei Chang, Jenshan Lin, Marko J. Tadjer, S. J. Pearton, Akito Kuramata   +8 more
doaj   +1 more source

Manufacturing Practices for Silicon-Based Power Diode in Fast Recovery Applications [PDF]

Журнал нано- та електронної фізики, 2011
This paper reports a fast recovery semiconductor diode that was developed for use in high power applications. The diode constructed in disc-type ceramic package with a peak-inverse voltage rating of 2800 V and current rating of 710 A was fabricated using
N. Harihara Krishnan, N. Anandarao, Vikram Kumar Yadav, K.N. Jayaraman, Ganesh Sanjeev   +4 more
doaj  

Establishing an Apheresis Medicine Program in a Resource‐Constrained Setting: A 5‐Year Experience From Lagos, Nigeria

Therapeutic Apheresis and Dialysis, EarlyView.
ABSTRACT Background Establishing a comprehensive apheresis medicine program in a resource‐constrained setting presents significant structural, financial, and logistical challenges. Despite the growing clinical importance of apheresis services globally, published experience from sub‐Saharan Africa remains sparse.
Folasade Adelekan‐Popoola, Shakirat Gold‐Olufadi, Olufunto Olufela Kalejaiye, Abdullateef Ogala, Rasheed A. Balogun   +4 more
wiley   +1 more source