Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation [PDF]
Sensors, 2017 A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and ...
Hojong Choi +3 more
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Investigation of Channel Mobility Enhancement Techniques Using Si/SiGe/GeSn Materials in Orthogonally Oriented Selective Buried Triple Gate Vertical Power MOSFET: Design and Performance Analysis [PDF]
MicromachinesThe performance of the Si MOSFET is suppressed when the channel loses its control through the gate. This paper introduces a new and novel high-channel conducting orthogonally oriented selective buried triple gate vertical power MOSFET technology to study
M. Ejaz Aslam Lodhi +4 more
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High Performance Multiple Inversion Layer Selective Buried Triple Gate Vertical Trench Power MOSFET [PDF]
Scientific ReportsThis paper analyses the various properties that governs a power MOSFET for a novel and unique vertical triple gate selective buried trench power MOSFET. Our recent work consists of a MOSFET having two lateral selective buried gates and a single vertical ...
M. Ejaz Aslam Lodhi +4 more
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Effects of parasitic capacitance on switching transients and thermal performance in a single-phase SiC power MOSFET inverter [PDF]
Scientific ReportsThis study aims to investigate the influence of parasitic capacitances within half-bridge SiC power metal oxide semiconductor field effect transistor (MOSFET) modules, including input capacitance (Ciss), output capacitance (Coss), and reverse transfer ...
Hsien-Chie Cheng +5 more
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Problems related to the correct determination of switching power losses in high-speed SiC MOSFET power modules [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2022 High-speed switching capabilities of SiC MOSFET power modules allow building high power converters working with elevated switching frequencies offering high efficiencies and high power densities.
Dawid Zięba, Jacek Rąbkowski
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IEEE Access, 2023 We investigate the impact of power MOSFET channel width on the power efficiency of a switch-mode power supply. With this analysis, we derive a circuit-specific criterion that minimizes the power dissipated by a power MOSFET, which is based on the ratio ...
Vikas Joshi +5 more
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Wasit Journal of Engineering Sciences, 2022 Bidirectional DC-DC converters allow power to be transferred in any direction between two electrical sources. These converters are increasingly employed in a variety of applications, including battery chargers and dischargers, energy storage devices ...
nuha al-obaidi +2 more
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Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2021 The main drawback of any Design for Reliability methodology is lack of easy accessible reliability models, prepared individually for each critical component.
Sebastian Bąba
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Failure quantitative assessment approach to MOSFET power device by detecting parasitic parameters
Frontiers in Physics, 2022 With the emerging wide bandgap (WBG) semiconductor development, the increasing power density and efficiency of power electronic converters may cause more switching oscillation, electromagnetic interference noise, and additional power loss, further ...
Minghui Yun +7 more
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High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module
IEEE Journal of the Electron Devices Society, 2021 SiC MOSFET allows higher temperature capability with higher switching efficiency than that of conventional Si devices, due to its superior electrical and thermal properties.
Yue Chen +3 more
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