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Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits
IEEE Journal of the Electron Devices Society, 2021 A new low-voltage power MOSFET is proposed to improve the figure-of-merits (FOMs) for power loss reduction. Slit field plate (Slit FP) structure is effective to cope with both the on-resistance $R_{on}$ A reduction and high speed switching due to flat ...
Taichi Ogawa +2 more
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Design and Comparison of SiC MOSFET inverter for Underwater High-Power and High-Speed Motor
水下无人系统学报, 2023 The proposal of deep and high sea and the application target of high maneuverability and concealment means that the future power system of underwater vehicles should have higher speed, power density, and efficiency.
Li ZHAI +5 more
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Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs
IEEE Access, 2020 Analysis of the switching losses in a power MOSFET is crucial for the design of efficient power electronic systems. Currently, the state-of-the-art technique is based on measured drain current and drain-to-source voltage during the switching intervals ...
Utkarsh Jadli +5 more
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Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2019 This paper discusses selected problems regarding a high-frequency improved current-fed quasi-Z-source inverter (iCFqZSI) designed and built with SiC power devices. At first, new, modified topology of the impedance network is presented.
P. Trochimiuk +2 more
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IEEE Access, 2019 Aging has been generally regarded as one of the principal root causes of power device failure, due to it makes the performance of power device degradative, which will directly influence the electrical–thermal performances of the power device. Thus,
Shengyou Xu +5 more
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COMPARATIVE ANALYSIS OF THERMAL STRESS OF Si AND SiC MOSFETs
Platform, a Journal of Engineering, 2021 The performance of power MOSFET is affected by high thermal stress exposure. A high level of thermal stress is induced when the MOSFET experiences a temperature change. This finding is about the bonding wire lift-off on the solder pad.
Shree Chakravarthy Devadas +1 more
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Recent research progress of single particle effect of SiC MOSFET
He jishu, 2022 With the rapid development of nuclear energy and space technology, application of high-voltage power devices based on SiC, especially the SiC MOSFET, is increasing. The problems of single event effect (SEE) caused by high-energy particle radiation in the
LIU Cuicui +6 more
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Long-Term Lifetime Prediction of Power MOSFET Devices Based on LSTM and GRU Algorithms
Mathematics, 2023 Predicting the long-term lifetime of power MOSFET devices plays a central role in the prevention of unprecedented failures for power MOSFETs used in safety-critical applications.
Mesfin Seid Ibrahim +6 more
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Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode
IEEE Journal of the Electron Devices Society, 2021 A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD) integrated between the split gates, and is investigated by numerical TCAD simulation.
Ya Liang Zheng +4 more
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IEEE Access, 2019 The circuit parasitic components have a significant effect on switching performance in the high-voltage and high-frequency pulsed power converter.
Qunfang Wu +5 more
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