Results 1 to 10 of about 5,924,760 (360)

GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance [PDF]

Micromachines, 2023
A novel VDMOS with the GaN/Si heterojunction (GaN/Si VDMOS) is proposed in this letter to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp) by Breakdown Point Transfer (BPT), which transfers the breakdown point from the high ...
Xin Yang, Baoxing Duan, Yintang Yang
doaj   +2 more sources

Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation [PDF]

Micromachines, 2022
A novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp).
Dongyan Zhao, Yubo Wang, Yanning Chen, Jin Shao, Zhen Fu, Baoxing Duan, Fang Liu, Xiuwei Li, Tenghao Li, Xin Yang, Mingzhe Li, Yintang Yang   +11 more
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A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance [PDF]

Micromachines
In this paper, a novel 4H-SiC deep-trench super-junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a split-gate is proposed and theoretically verified by Sentaurus TCAD simulations.
Rongyao Ma, Ruoyu Wang, Hao Fang, Ping Li, Longjie Zhao, Hao Wu, Zhiyong Huang, Jingyu Tao, Shengdong Hu   +8 more
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An organ-specific view on nonhost resistance [PDF]

Frontiers in Plant Science, 2015
Nonhost resistance (NHR) is the resistance of plants to a plethora of non-adapted pathogens and is considered as one of the most robust resistance mechanisms of plants. Studies have shown that the efficiency of resistance in general and NHR in particular
Roxana eStrugala, Rhoda eDelventhal, Ulrich eSchaffrath   +2 more
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Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance

IEEE Access, 2021
A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve the breakdown voltage and specific on-resistance (RonA).
Miao Zhang, Zhiyou Guo, Yong Huang, Yuan Li, Jiancheng Ma, Xiaoyu Xia, Xiuyang Tan, Fan Xia, Huiqing Sun   +8 more
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A 1200-V-Class Ultra-Low Specific On-Resistance SiC Lateral MOSFET With Double Trench Gate and VLD Technique

IEEE Journal of the Electron Devices Society, 2022
An ultra-low specific on-resistance 4H-SiC power laterally diffused metal oxide semiconductor (LDMOS) device is proposed for 1200V-class applications.
Moufu Kong, Zewei Hu, Jiacheng Gao, Zongqi Chen, Bingke Zhang, Hongqiang Yang   +5 more
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Novel Si/SiC Heterojunction Lateral Double-Diffused Metal Oxide Semiconductor With SIPOS Field Plate by Simulation Study

IEEE Journal of the Electron Devices Society, 2021
A novel Si/SiC heterojunction Lateral Double-diffused Metal Oxide Semiconductor with the Semi-Insulating Polycrystalline Silicon field plate (SIPOS Si/SiC LDMOS) is proposed in this paper for the first time.
Baoxing Duan, Shaoxuan Xue, Xin Huang, Yintang Yang   +3 more
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Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode

IEEE Journal of the Electron Devices Society, 2022
A 4H-SiC MOSFET with p-type region injection and integrated split gate and heterojunction diode is proposed in this paper. Compared with the conventional MOSFET, the proposed structure has a lower on-resistance and switching loss.
Hai-Yong Xu, Ying Wang, Meng-Tian Bao, Fei Cao   +3 more
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Effect of P+ Source Pattern in 4H-SiC Trench-Gate MOSFETs on Low Specific On-Resistance

Applied Sciences, 2022
Novel 1.7-kV 4H-SiC trench-gate MOSFETs (TMOSFETs) with a grid pattern and a smaller specific on-resistance are proposed and demonstrated via numerical simulations. The proposed TMOSFETs provide a reduced cell pitch compared with TMOSFETs with square and
Jee-Hun Jeong, Min-Seok Jang, Ogyun Seok, Ho-Jun Lee   +3 more
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On the Advantages of Specific Airway Resistance [PDF]

Pediatric Research, 1978
The specific airway resistance (SRaw) is a relatively precise parameter of bronchial quality and in normal children its relation with body length, although very significant (P less than 0.001), is so poor that it can safely be disregarded (Fig. 4). Also the dispersion around the mean value remains stable at any body size (Fig. 4).
I, Dab, F, Alexander
openaire   +2 more sources