Numerical Investigation of Transient Breakdown Voltage Enhancement in SOI LDMOS by Using a Step P-Type Doping Buried Layer [PDF]
Micromachines, 2023 In this paper, the transient breakdown voltage (TrBV) of a silicon-on-insulator (SOI) laterally diffused metal-oxide-semiconductor (LDMOS) device was increased by introducing a step P-type doping buried layer (SPBL) below the buried oxide (BOX).
Xiaoming Yang +4 more
doaj +2 more sources
A TCAD Study on High-Voltage Superjunction LDMOS with Variable-K Dielectric Trench [PDF]
Micromachines, 2022 In this paper, a novel high voltage superjunction lateral double diffused MOSFETs (SJ-LDMOS) using a variable high permittivity (VHK) dielectric trench is presented.
Zhen Cao +5 more
doaj +2 more sources
IET Circuits, Devices and Systems, 2022 In this study, design considerations of a new device structure are presented to improve the self‐heating effect (SHE) and the breakdown voltage of the Deep Gate LDMOS (Lateral Double Diffused Metal Oxide Semiconductor) transistor and compared with a ...
Amir Gavoshani, Ali A. Orouji
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Results in Physics, 2022 This paper investigates the double dielectrics enhancement LDMOS (DDE LDMOS) with high-k field dielectric and low-k buried dielectric. The analytical models of the potential and electric field, optimal breakdown voltage and drift doping concentration are
Jiafei Yao, Yufeng Guo, Maolin Zhang
exaly +3 more sources
A Trench Heterojunction Diode-Integrated 4H-SiC LDMOS with Enhanced Reverse Recovery Characteristics [PDF]
MicromachinesIn this paper, a novel 4H-SiC LDMOS structure with a trench heterojunction in the source (referred as to THD-LDMOS) is proposed and investigated for the first time, to enhance the reverse recovery performance of its parasitic diode. Compared with 4H-SiC,
Yanjuan Liu, Fangfei Bai, Junpeng Fang
doaj +2 more sources
Design of dual-band power amplifier using bandstop filter and dual-mode bias circuit for multistandard transceiver systems [PDF]
Scientific Reports, 2023 This paper presents a dual-band power amplifier (PA) using a meandered line bandstop filter (BSF). An important challenge addressed in this design is to achieve proper isolation between the operational bands of the amplifier.
Sepehr Zarghami, Mohsen Hayati
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Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layer [PDF]
Nanoscale Research Letters, 2019 An ultra-low specific on-resistance (R on,sp) lateral double-diffused metal-oxide-semiconductor transistor (LDMOS) with enhanced dual-gate and partial P-buried layer is proposed and investigated in this paper.
Zhuo Wang +5 more
doaj +2 more sources
Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region [PDF]
MicromachinesTo enhance the electrical safe operation area (eSOA) of laterally diffused metal oxide semiconductor (LDMOS) transistors, a novel reduced surface electric field (Resurf) structure in the n-drift region is proposed, which was fabricated by ion ...
Lianjie Li +3 more
doaj +2 more sources
IEEE Journal of the Electron Devices Society, 2021 A novel Si/SiC heterojunction Lateral Double-diffused Metal Oxide Semiconductor with the Semi-Insulating Polycrystalline Silicon field plate (SIPOS Si/SiC LDMOS) is proposed in this paper for the first time.
Baoxing Duan +3 more
doaj +1 more source
Research and design of high voltage radiation hardened lateral diffused metal oxide semiconductor
Fushe yanjiu yu fushe gongyi xuebao, 2022 Lateral diffused metal oxide semiconductors (LDMOS) used in power management integrated circuits demonstrate low anti-radiation performance. To address this issue, a high voltage radiation hardened LDMOS structure was studied, and an N-LDMOS device with ...
CHU Fei +4 more
doaj +1 more source