Results 1 to 10 of about 3,588 (218)
Numerical investigation on L-shaped vertical field plate in high-voltage LDMOS
Results in Physics, 2019 In this work, an L-shaped vertical field plate (LVFP) is introduced in high-voltage lateral double-diffused MOSFET (LDMOS). The LVFP is embedded in an oxide trench that penetrates into the drift region. Compared with the conventional vertical field plate
Yue Hu +5 more
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IEEE Journal of the Electron Devices Society, 2020 To elaborate on the relationship between sophisticated 2-D doping profile of drift region and device's breakdown behavior, a unified analytical model for the SOI LDMOS is developed in this paper.
Kemeng Yang +6 more
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Modeling and Simulation of LDMOS Device
International Journal of Engineering Research, 2015 Laterally Diffused MOSFET (LDMOS) are widely used in modern communication industry and other applications. LDMOS offers various advantages over conventional MOSFETs with little process change. In the present paper, an LDMOS device is modeled and simulated in SILVACO device simulator package using the ATHENA and ATLAS modules.
Sunitha HD, Keshaveni N
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A Trench LDMOS Improved by Quasi Vertical Super Junction and Resistive Field Plate
IEEE Journal of the Electron Devices Society, 2019 An improved trench lateral double-diffused MOSFET (T-LDMOS) is proposed. It has a quasi vertical super junction (QVSJ) drift region and adopts a resistive field plate (RFP) to help QVSJ satisfy charge-balance.
Junji Cheng +4 more
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Optimizing Shortwave Wideband RF Amplifier: Study of Transmission Line Transformer Construction Methods [PDF]
RadioengineeringThis paper presents a study of six physical transmission line transformers (TLTs) designed to provide wideband output matching for laterally diffused metal oxide semiconductor (LDMOS) transistors within a push-pull amplifier operating in the 1.8-30 MHz ...
G. Krupa, G. Budzyn
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A Substrate-Dissipating (SD) Mechanism for a Ruggedness-Improved SOI LDMOS Device
IEEE Journal of the Electron Devices Society, 2018 An SOI LDMOS device with improved ruggedness under unclamped inductive switching (UIS) is described based on the substrate-dissipating (SD) mechanism.
Bing Wang, Zhigang Wang, James B. Kuo
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Case Studies in Thermal EngineeringThe thermal behavior analysis is undoubtedly the main concern when studying semiconductor devices' and structures' physical mechanics. To the best of our knowledge, simulations studies with an experimental validation of the temperature effect vs ...
Mohammed Almatrafi, Mohamed Ali Belaïd
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The Simulation Study of the SOI Trench LDMOS With Lateral Super Junction
IEEE Journal of the Electron Devices Society, 2018 A novel lateral double diffused metal oxide semiconductor (LDMOS) with trench oxide layer, featuring a lateral super junction structure based on the silicon-on-insulator technology is proposed.
Weizhong Chen +3 more
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On the modeling of LDMOS RF power transistors
IEEE Custom Integrated Circuits Conference 2010, 2010 In this review we present a technology-independent approach to the construction of a circuit model for a high-power radio-frequency (RF) LDMOS FET. We compare and contrast this approach with other MOSFET modeling approaches used for digital and RF CMOS applications.
Wood, J, Aaen, PH
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Development and Evaluation of SiC LDMOS for High-Temperature Applications
IEEE Journal of the Electron Devices SocietyThis paper proposes and experimentally evaluates SiC laterally diffused metal-oxide-semiconductor (LDMOS) devices fabricated on two full 4H-SiC processes with P-type and N-type epitaxial layers.
Pengyu Lai +3 more
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