Results 1 to 10 of about 1,707 (123)

Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET [PDF]

Nanomaterials
This study investigates the degradation mechanisms of 1200 V SiC MOSFETs during High-temperature Reverse Bias (HTRB) reliability testing, focusing on breakdown voltage (BV) reduction.
Mengyuan Yu, Yi Shen, Hongping Ma, Qingchun Zhang   +3 more
doaj   +2 more sources

I–V Characteristics and Electrical Reliability of Metal–Si_xN_y–Metal Capacitors as a Function of Nitrogen Bonding Composition [PDF]

Micromachines
In this study, we analyzed the electrical characteristics of metal–insulator–metal (MIM) capacitors fabricated with reference to insulator (SixNy) thickness and deposition condition.
Tae-Min Choi, Eun-Su Jung, Jin-Uk Yoo, Hwa-Rim Lee, Songhun Yoon, Sung-Gyu Pyo   +5 more
doaj   +2 more sources

Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs

Micromachines, 2022
This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (VTH) stability.
Hongyue Wang, Yijun Shi, Yajie Xin, Chang Liu, Guoguang Lu, Yun Huang   +5 more
doaj   +1 more source

Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers

Micromachines, 2021
In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off.
Ki Yeong Kim, Joo Seok Noh, Tae Young Yoon, Jang Hyun Kim   +3 more
doaj   +1 more source

Erratum to: Modeling and experimental study on breakdown voltage (BV) in low speed wire electrical discharge machining (LS-WEDM) of Ti-6Al-4V [PDF]

The International Journal of Advanced Manufacturing Technology, 2017
In this study, the breakdown voltage behavior in low speed wire electrical discharge machining (LS-WEDM) of Ti-6Al-4V (TC4) in the deionized water is investigated. Firstly, the electric field distortion caused by impurity particles including TC4 or brass metal and bubbles is investigated.
Yadong Gong, Yao Sun, Jun Cheng, Chao Wang, Yin Liu, Zongxiao Zhu   +5 more
openaire   +1 more source

GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance

Micromachines, 2023
A novel VDMOS with the GaN/Si heterojunction (GaN/Si VDMOS) is proposed in this letter to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp) by Breakdown Point Transfer (BPT), which transfers the breakdown point from the high ...
Xin Yang, Baoxing Duan, Yintang Yang
doaj   +1 more source

Breakdown voltage characteristics of combined air gaps under negative lightning impulse

Energy Reports, 2022
Long air gaps are the main external insulation medium of overhead transmission lines. When there are floating conductors in the air gap, the gap’s configuration changes, and the combined air gaps is formed. We built an experimental platform to obtain the
Shaocheng Wu, Linong Wang, Jiachen Gao, Cheng Xie, Bin Song, Yong Peng, Jianben Liu, Yan Liu   +7 more
doaj   +1 more source

Novel SiC/Si heterojunction LDMOS with electric field modulation effect by reversed L-shaped field plate

Results in Physics, 2020
A novel SiC/Si heterojunction lateral double-diffused metal-oxidesemiconductor (LDMOS) with a reversed L-shaped field plate and a stepped oxide layer has been proposed to improve the tradeoff between the breakdown voltage (BV) and specific on-resistance (
Qi Li, Leilei Yuan, Fabi Zhang, Haiou Li, Gongli Xiao, Yonghe Chen, Tangyou Sun, Xingpeng Liu, Tao Fu   +8 more
doaj   +1 more source

Equivalent model and limit for the SOI lateral power device using high-k dielectric

Results in Physics, 2019
This paper presents a simple and clear equivalent model to investigate the SOI lateral power device using high-k dielectric (HK device). The proposed model can accurately characterize the electric field and facilitate the obtainment of optimal breakdown ...
Jiafei Yao, Yufeng Guo, Yu Deng, Kemeng Yang, Man Li, Tian Xia   +5 more
doaj   +1 more source

Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination

IEEE Journal of the Electron Devices Society, 2022
Breakdown capability of ${\beta }$ -Ga2O3/GaN heterojunction-based vertical p-n power diodes with mesa edge termination (ET) was comprehensively investigated using TCAD simulation.
Dinusha Herath Mudiyanselage, Dawei Wang, Houqiang Fu   +2 more
doaj   +1 more source