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Experimentally Engineering the Edge Termination of Graphene Nanoribbons [PDF]

open access: yesACS Nano, 2013
The edges of graphene nanoribbons (GNRs) have attracted much interest due to their potentially strong influence on GNR electronic and magnetic properties.
Alex Zettl   +39 more
core   +5 more sources

Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by Simulation [PDF]

open access: yesMicromachines, 2023
In this paper, diamond-based vertical p-n junction diodes with step edge termination are investigated using a Silvaco simulation (Version 5.0.10.R). Compared with the conventional p-n junction diode without termination, the step edge termination shows ...
Guangshuo Cai   +6 more
doaj   +2 more sources

Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode [PDF]

open access: yesMicromachines, 2023
In this study, we developed an analytic model to design a trench metal–insulator–semiconductor (MIS) field plate (FP) structure for the edge termination of a vertical GaN PN diode.
Sung-Hoon Lee, Ho-Young Cha
doaj   +2 more sources

Non-simplifying Graph Rewriting Termination [PDF]

open access: yesElectronic Proceedings in Theoretical Computer Science, 2013
So far, a very large amount of work in Natural Language Processing (NLP) rely on trees as the core mathematical structure to represent linguistic informations (e.g. in Chomsky's work).
Bruno Guillaume, Guillaume Bonfante
doaj   +7 more sources

Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination

open access: yesCrystals, 2022
GaN vertical PiN diodes with different anode thicknesses were fabricated on three native GaN wafers with the same p-layer doping concentrations, and planar hybrid edge termination.
Mona A. Ebrish   +7 more
doaj   +3 more sources

Universal Trench Edge Termination Design [PDF]

open access: yes2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012
The minimum trench edge termination length for various trench depth is theoretically determined to obtain universal curve for efficient design under considering trade-off relation with trench fabrication difficulty, cost and limitation specially for thin
Kamibaba Ryu   +3 more
core   +3 more sources

EDGE-NATIVE CABLE ACCESS NETWORK WITH UDP TERMINATION

open access: yesКомпютерні системи та інформаційні технології
This paper introduces a software-defined architectural model for modernizing upstream transport in hybrid fiber-coaxial networks through user-space UDP termination using the VPP HostStack.
Іван ІВАНЕЦЬ   +2 more
doaj   +2 more sources

Edge termination design for 1.7 kV silicon carbide p-i-n diodes [PDF]

open access: yesBulletin of the Polish Academy of Sciences: Technical Sciences, 2020
In this work, in order to obtain breakdown voltage values of the 4H-SiC p-i-n diodes above 1.7kV, three designs have been examined: single-zone junction termination extention (JTE), double-zone JTE and a structure with concentric rings outside each of ...
A. Taube, M. Sochacki
doaj   +1 more source

Edge states in rationally terminated honeycomb structures

open access: yesProceedings of the National Academy of Sciences, 2022
Consider the tight binding model of graphene, sharply terminated along an edge l parallel to a direction of translational symmetry of the underlying period lattice. We classify such edges l into those of “zigzag type” and those of “armchair type,” generalizing the classical zigzag and armchair edges.
Fefferman, Charles   +2 more
openaire   +4 more sources

6 kV/180 °C High Temperature Reverse Bias Test Equipment for High Voltage and High Power Devices

open access: yesZhongguo dianli, 2021
High Temperature Reverse Bias (HTRB) test is an important part in reliability tests on IGBTs. The accuracy and function of the test equipment determine the accuracy of the performance monitoring of the tested device.
Erping DENG   +4 more
doaj   +1 more source

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