Results 21 to 30 of about 40,649 (287)
Experimentally Engineering the Edge Termination of Graphene Nanoribbons [PDF]
ACS Nano, 2012 The edges of graphene nanoribbons (GNRs) have attracted much interest due to their potentially strong influence on GNR electronic and magnetic properties. Here we report the ability to engineer the microscopic edge termination of high quality GNRs via hydrogen plasma etching.
Zhang, X. +11 more
openaire +5 more sources
Reversible Modification of Rashba States in Topological Insulators at Room Temperature by Edge Functionalization [PDF]
Advanced ScienceQuantum materials with novel spin textures from strong spin‐orbit coupling (SOC) are essential components for a wide array of proposed spintronic devices.
Wonhee Ko +9 more
doaj +2 more sources
Role of chemical termination in edge contact to graphene [PDF]
APL Materials, 2014 Edge contacts to graphene can offer excellent contact properties. Role of different chemical terminations is examined by using ab initio density functional theory and quantum transport simulations. It is found that edge termination by group VI elements O
Qun Gao, Jing Guo
doaj +2 more sources
A contact detection algorithm for polyhedrons based on improved common-plane concept [PDF]
Scientific ReportsTo address the inaccuracies in contact point calculation and low computational efficiency of traditional common-plane methods in complex contact scenarios, this study proposes an improved contact detection algorithm based on the common-plane concept.
Mingqing Liu
doaj +2 more sources
IEEE Journal of the Electron Devices SocietyThe impact of gamma ray irradiation on the blocking characteristics of edge termination on 4H-SiC has been investigated. The dominant mechanism for the degradation of breakdown voltage (VBD) is the trapping of net positive charges in the field oxide (FOX)
Chuan-Han Chen +2 more
doaj +2 more sources
Universal Trench Edge Termination Design
Universal Trench Edge Termination DesignThe minimum trench edge termination length for various trench depth is theoretically determined to obtain universal curve for efficient design under considering trade-off relation with trench fabrication difficulty, cost and limitation specially for thin wafer IGBTs and diodes.
Kamibaba, Ryu +5 more
openaire +1 more source
Edge termination design for 1.7 kV silicon carbide p-i-n diodes [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2020 In this work, in order to obtain breakdown voltage values of the 4H-SiC p-i-n diodes above 1.7kV, three designs have been examined: single-zone junction termination extention (JTE), double-zone JTE and a structure with concentric rings outside each of ...
A. Taube, M. Sochacki
doaj +1 more source
Edge states in rationally terminated honeycomb structures
Proceedings of the National Academy of Sciences, 2022 Consider the tight binding model of graphene, sharply terminated along an edge l parallel to a direction of translational symmetry of the underlying period lattice. We classify such edges l into those of “zigzag type” and those of “armchair type,” generalizing the classical zigzag and armchair edges.
Fefferman, Charles +2 more
openaire +4 more sources
6 kV/180 °C High Temperature Reverse Bias Test Equipment for High Voltage and High Power Devices
Zhongguo dianli, 2021 High Temperature Reverse Bias (HTRB) test is an important part in reliability tests on IGBTs. The accuracy and function of the test equipment determine the accuracy of the performance monitoring of the tested device.
Erping DENG +4 more
doaj +1 more source
Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination
IEEE Journal of the Electron Devices Society, 2020 Gallium nitride (GaN)-based power devices enable high power density and high switching frequency for power electronics systems. For the emerging vertical GaN devices, the electric field crowding around the edge of the main junction could result in ...
Yuxin Liu, Shu Yang, Kuang Sheng
doaj +1 more source