Results 31 to 40 of about 40,649 (287)

Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings

open access: yesIEEE Journal of the Electron Devices Society, 2020
Vertical GaN Schottky barrier diodes (SBDs) with floating metal rings (FMRs) as edge termination structures have been fabricated on bulk GaN substrates.
Tsung-Han Yang   +10 more
doaj   +1 more source

Women’s experiences of coping with pregnancy\ud termination for fetal abnormality [PDF]

open access: yes, 2013
Pregnancy termination for fetal abnormality (TFA) can have significant psychological consequences. Most research focus on measuring the psychological outcome of TFA,\ud and little is known about the coping strategies involved.
Lafarge, Caroline   +2 more
core   +1 more source

Experimental observation of edge states in SSH-Stub photonic lattices

open access: yesPhysical Review Research, 2022
We reveal unconventional edge states in a one-dimensional Stub lattice of coupled waveguides with staggered hoppings. The edge states appear for the same values of hoppings as topological edge states in the Su-Schrieffer-Heeger model. They have different
Gabriel Cáceres-Aravena   +5 more
doaj   +1 more source

1.7-kV vertical GaN p-n diode with triple-zone graded junction termination extension formed by ion-implantation

open access: yese-Prime: Advances in Electrical Engineering, Electronics and Energy, 2023
Edge termination has emerged as an important area in the design and realization of vertical GaN power electronic devices. While the material properties of GaN are promising for high-performance devices, in practice the breakdown voltage can be ...
Yu Duan   +4 more
doaj   +1 more source

Study of a SiC Trench MOSFET Edge-Termination Structure with a Bottom Protection Well for a High Breakdown Voltage

open access: yesApplied Sciences, 2020
A novel edge-termination structure for a SiC trench metal−oxide semiconductor field-effect transistor (MOSFET) power device is proposed. The key feature of the proposed structure is a periodically formed SiC trench with a bottom protection well ...
Jee-Hun Jeong   +4 more
doaj   +1 more source

Termination of Graphene Edges Created by Hydrogen and Deuterium Plasmas

open access: yesSSRN Electronic Journal, 2022
8 pages, 5 ...
Taisuke Ochi   +5 more
openaire   +2 more sources

POLYLLA: polygonal meshing algorithm based on terminal-edge regions

open access: yesEngineering with Computers, 2022
This paper presents an algorithm to generate a new kind of polygonal mesh obtained from triangulations. Each polygon is built from a terminal-edge region surrounded by edges that are not the longest-edge of any of the two triangles that share them. The algorithm is termed Polylla and is divided into three phases.
Sergio Salinas-Fernández   +3 more
openaire   +3 more sources

Identifying the Molecular Edge Termination of Exfoliated Hexagonal Boron Nitride Nanosheets with Solid-State NMR Spectroscopy and Plane-Wave DFT Calculations

open access: yes, 2019
Hexagonal boron nitride nanosheets (h-BNNS), the isoelectric analog to graphene, have received much attention over the past decade due to their high thermal oxidative resistance, high bandgap, catalytic activity and low cost.
Rick W., Dorn   +7 more
core   +2 more sources

Non-simplifying Graph Rewriting Termination [PDF]

open access: yesElectronic Proceedings in Theoretical Computer Science, 2013
So far, a very large amount of work in Natural Language Processing (NLP) rely on trees as the core mathematical structure to represent linguistic informations (e.g. in Chomsky's work).
Bruno Guillaume, Guillaume Bonfante
doaj   +1 more source

Finding Maximum Edge-Disjoint Paths Between Multiple Terminals

open access: yesSIAM Journal on Computing, 2023
37 pages, 9 ...
Satoru Iwata 0001, Yu Yokoi
openaire   +3 more sources

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