Results 11 to 20 of about 1,081,243 (285)
Universal trench edge termination design [PDF]
2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012 The minimum trench edge termination length for various trench depth is theoretically determined to obtain universal curve for efficient design under considering trade-off relation with trench fabrication difficulty, cost and limitation specially for thin wafer IGBTs and diodes.
Kota Seto +3 more
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A contact detection algorithm for polyhedrons based on improved common-plane concept [PDF]
Scientific ReportsTo address the inaccuracies in contact point calculation and low computational efficiency of traditional common-plane methods in complex contact scenarios, this study proposes an improved contact detection algorithm based on the common-plane concept.
Mingqing Liu
doaj +2 more sources
Proving termination using abstract interpretation [PDF]
, 2010 PhDOne way to develop more robust software is to use formal program verification. Formal program verification requires the construction of a formal mathematical proof of the programs correctness. In the past ten years or so there has been much progress
Chawdhary, Aziem A.
core +4 more sources
Edge termination design for 1.7 kV silicon carbide p-i-n diodes [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2020 In this work, in order to obtain breakdown voltage values of the 4H-SiC p-i-n diodes above 1.7kV, three designs have been examined: single-zone junction termination extention (JTE), double-zone JTE and a structure with concentric rings outside each of ...
A. Taube, M. Sochacki
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6 kV/180 °C High Temperature Reverse Bias Test Equipment for High Voltage and High Power Devices
Zhongguo dianli, 2021 High Temperature Reverse Bias (HTRB) test is an important part in reliability tests on IGBTs. The accuracy and function of the test equipment determine the accuracy of the performance monitoring of the tested device.
Erping DENG +4 more
doaj +1 more source
Experimentally Engineering the Edge Termination of Graphene Nanoribbons [PDF]
ACS Nano, 2012 The edges of graphene nanoribbons (GNRs) have attracted much interest due to their potentially strong influence on GNR electronic and magnetic properties. Here we report the ability to engineer the microscopic edge termination of high quality GNRs via hydrogen plasma etching.
Zhang, Xiaowei +11 more
openaire +4 more sources
Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination
IEEE Journal of the Electron Devices Society, 2020 Gallium nitride (GaN)-based power devices enable high power density and high switching frequency for power electronics systems. For the emerging vertical GaN devices, the electric field crowding around the edge of the main junction could result in ...
Yuxin Liu, Shu Yang, Kuang Sheng
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Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings
IEEE Journal of the Electron Devices Society, 2020 Vertical GaN Schottky barrier diodes (SBDs) with floating metal rings (FMRs) as edge termination structures have been fabricated on bulk GaN substrates.
Tsung-Han Yang +10 more
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Edge states in rationally terminated honeycomb structures
Proceedings of the National Academy of Sciences, 2022 Consider the tight binding model of graphene, sharply terminated along an edge l parallel to a direction of translational symmetry of the underlying period lattice. We classify such edges l into those of “zigzag type” and those of “armchair type,” generalizing the classical zigzag and armchair edges.
Fefferman, Charles +2 more
openaire +4 more sources
Applied Sciences, 2020 A novel edge-termination structure for a SiC trench metal−oxide semiconductor field-effect transistor (MOSFET) power device is proposed. The key feature of the proposed structure is a periodically formed SiC trench with a bottom protection well ...
Jee-Hun Jeong +4 more
doaj +1 more source