Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by Simulation [PDF]
Micromachines, 2023 In this paper, diamond-based vertical p-n junction diodes with step edge termination are investigated using a Silvaco simulation (Version 5.0.10.R). Compared with the conventional p-n junction diode without termination, the step edge termination shows ...
Guangshuo Cai +6 more
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Crystals, 2022 GaN vertical PiN diodes with different anode thicknesses were fabricated on three native GaN wafers with the same p-layer doping concentrations, and planar hybrid edge termination.
Mona A. Ebrish +7 more
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Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode [PDF]
Micromachines, 2023 In this study, we developed an analytic model to design a trench metal–insulator–semiconductor (MIS) field plate (FP) structure for the edge termination of a vertical GaN PN diode.
Sung-Hoon Lee, Ho-Young Cha
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Recent Developments and Challenges of Edge Termination Techniques for Vertical Diamond Schottky Barrier Diodes [PDF]
SensorsThanks to its excellent material properties, diamond-based power electronic devices have garnered widespread attention. The realization of large-sized (over 2 inches) and high-quality single-crystal diamond wafers has significantly accelerated the ...
Genzhuang Li +5 more
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Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices [PDF]
MicromachinesThis study focuses on the impact of negative fixed charge, achieved through fluorine (F) implantation, on breakdown voltage (BV) enhancement in vertical GaN Schottky diodes.
Vishwajeet Maurya +4 more
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High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination [PDF]
Nanoscale Research Letters, 2019 The edge-terminated Au/Ni/β-Ga2O3 Schottky barrier diodes were fabricated by using argon implantation to form the high-resistivity layers at the periphery of the anode contacts.
Yangyang Gao +12 more
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Physical mechanism of field modulation effects in ion implanted edge termination of vertical GaN Schottky barrier diodes [PDF]
Fundamental Research, 2022 In this study, the physical properties of F ion-implanted GaN were thoroughly studied, and the related electric-field modulation mechanisms in ion-implanted edge termination were revealed.
Ruiyuan Yin +8 more
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Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers [PDF]
MicromachinesWe demonstrated 3.3 kV silicon carbide (SiC) PiN diodes using a trenched ring-assisted junction termination extension (TRA-JTE) with PN multi-epitaxial layers.
Sangyeob Kim, Ogyun Seok
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Electronic Transport Properties of Trigonal Graphene Nanoribbon with Different Edge Termination
MATEC Web of Conferences, 2016 The electronic transport properties of trigonal graphene nanoribbon with different edge termination are studied with the first principle methods. It is found that edge termination plays an important role in electronic transport in these systems.
Liu Wen +4 more
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Edge-Termination and Core-Modification Effects of Hexagonal Nanosheet Graphene [PDF]
Molecules, 2014 Optimized geometries and electronic structures of two different hexagonal grapheme nanosheets (HGNSs), with armchair (n-A-HGNS, n = 3–11) and zigzag (n-Z-HGNS, n = 1–8) edges have been calculated by using the GGA/PBE method implemented in the SIESTA ...
Jin-Pei Deng +4 more
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