Results 41 to 50 of about 14,848 (235)
IEEE Journal of the Electron Devices Society, 2020 To elaborate on the relationship between sophisticated 2-D doping profile of drift region and device's breakdown behavior, a unified analytical model for the SOI LDMOS is developed in this paper.
Kemeng Yang +6 more
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A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile
IEEE Journal of the Electron Devices Society, 2021 In this article, we investigate a 4H-SiC super- junction (SJ) MOSFET structure with a charge-imbalance doping-profile. According to our numerical simulations and comparisons with the conventional SiC VDMOS (C-VDMOS) and SiC SJ VDMOS (SJ-VDMOS) devices ...
Hao Huang +6 more
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Suppression of line voltage related distortion in current controlled grid connected inverters [PDF]
, 2005 The influence of selected control strategies on the level of low-order current harmonic distortion generated by an inverter connected to a distorted grid is investigated through a combination of theoretical and experimental studies.
Abeyasekera, T. +3 more
core +2 more sources
Advanced Functional Materials, EarlyView.Gold bipyramids can act as efficient plasmonic nanoheaters, but they often reshape during laser heating. This study shows that oxygen nanobubbles drive oxidative etching and that surface ligands control stability. CTAB‐ and citrate‐coated particles blunt and lose optical performance, whereas polystyrene sulfonate preserves shape and heating by ...
Irene López‐Sicilia +7 more
wiley +1 more source
, 1973 A phototransistor is described in which there is included as a part of its integral structure an auxiliary diode in the form of an added base-collector junction.
Mccann, D. H.
core +1 more source
A novel active quenching circuit for single photon detection with Geiger mode avalanche photodiodes
, 2008 In this paper we present a novel construction of an active quenching circuit intended for single photon detection. For purpose of evaluation, we have combined this circuit with a standard avalanche photodiode C30902S to form a single photon detector.
Brown +16 more
core +1 more source
Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors [PDF]
, 2017 We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, diamond), relative to silicon, for power electronics applications.
Chow T. Paul +4 more
core +2 more sources
Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics
Advanced Materials, EarlyView.The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades +7 more
wiley +1 more source
TechnologiesThis study proposes an AlGaN/GaN current aperture vertical electron transistor (CAVET) featuring a double superjunction (SJ) to enhance breakdown voltage (BV) and investigates its electrical characteristics via technology computer-aided design (TCAD ...
Jong-Uk Kim +3 more
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Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks
Micromachines, 2022 Due to the complexity of the 2D coupling effects in AlGaN/GaN HEMTs, the characterization of a device’s off-state performance remains the main obstacle to exploring the device’s breakdown characteristics. To predict the off-state performance of AlGaN/GaN
Jing Chen +7 more
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