Results 51 to 60 of about 1,805 (221)
A unified analytical design reformulation for static performance optimization in Si, WBG, and UWBG devices [PDF]
This paper presents a unified analytical reformulation and extension of existing drift-region design methods for high-voltage unipolar semiconductor devices.
Woongje Sung, Mohamed Torky
doaj +1 more source
Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars
To reduce specific on-resistance (Ron,sp) of power devices, a novel SOI (silicon-on-insulator) trench gate LDMOS with heavily doping L-shaped P/N pillars and vertical dual-trench-gates is proposed in this paper, and its physical mechanism and electrical ...
Jingwei Guo +6 more
doaj +1 more source
ABSTRACT Osteoarthritis (OA) is a progressive and disabling joint disease driven by oxidative stress, chondrocyte senescence and extracellular matrix (ECM) degradation, yet lacks effective disease‐modifying treatments. In this study, we identified miR‐197‐3p as a previously unrecognized, cartilage‐protective miRNA significantly downregulated in both ...
Xuejie Cai +11 more
wiley +1 more source
Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges
In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other
Yifei Huang +5 more
doaj +1 more source
Electric field‑driven continuous gradient hydrogel GHZF4 achieves spatiotemporal growth factor release, modulates immune microenvironment, angiogenesis and osteochondral differentiation. It realizes cell‑free functional osteochondral repair in rat/rabbit models, offering a promising biomimetic strategy for gradient tissue regeneration.
Xiaolian Niu +7 more
wiley +1 more source
A Trench LDMOS Improved by Quasi Vertical Super Junction and Resistive Field Plate
An improved trench lateral double-diffused MOSFET (T-LDMOS) is proposed. It has a quasi vertical super junction (QVSJ) drift region and adopts a resistive field plate (RFP) to help QVSJ satisfy charge-balance.
Junji Cheng +4 more
doaj +1 more source
On the Effects of High-K Dielectric RESURF in High-Voltage Bulk FinFETs
High-K dielectric reduced surface field (RESURF) effects in high-voltage bulk FinFETs through three-dimensional simulation are discussed in this paper for the first time. Compared to a planar gate LDMOSFET where the length of the drift region is the same,
Chia-Hui Cheng +4 more
doaj +1 more source
Single‐cell mechanomics demonstrates that pharmacological perturbation changes cytoskeletal and cortical structure, suppressing cancer cell invasiveness. By integrating atomic force microscopy (AFM)‐based cortical measurements with stimulated emission depletion (STED)‐resolved adhesion and cytoskeletal organization, this approach identifies nanoscale ...
Minhee Ku +4 more
wiley +1 more source
Technology Computer Aided Design Study of GaN MISFET With Double P-Buried Layers
In this paper, a performance-improved AlGaN-/GaN-Based metal-insulator-semiconductor field effect transistor (MISFET) with double P-buried layers MISFET (DP-MISFET) is proposed. The proposed structure is simulated, and its characteristics are analyzed by
Ying Wang +4 more
doaj +1 more source
QRICH1 has been established as a key factor contributing to impaired osteogenic potential and accelerated apoptosis of PDLSCs in diabetic periodontitis. QRICH1 not only significantly enhances UPR‐associated apoptotic signaling but also amplifies NF‐κB‐mediated inflammatory responses. Its inhibition restores osteogenic capacity and reduces alveolar bone
Han Li +9 more
wiley +1 more source

