Results 51 to 60 of about 2,260 (262)

Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks

open access: yesMicromachines, 2022
Due to the complexity of the 2D coupling effects in AlGaN/GaN HEMTs, the characterization of a device’s off-state performance remains the main obstacle to exploring the device’s breakdown characteristics. To predict the off-state performance of AlGaN/GaN
Jing Chen   +7 more
doaj   +1 more source

Double‐Transition‐Metal MXenes: Multimetallic 2D Platforms for Next‐Generation Biomedicine

open access: yesAdvanced Materials, EarlyView.
The present work explores recent progress in double‐transition‐metal MXenes and focuses on their potential as multifunctional biomedical nanoplatforms whose tunable optical, electronic, mechanical, and surface properties enable imaging, theranostics, antimicrobial activity, biosensing, tissue engineering, and drug delivery.
Parsa Namakiaraghi   +2 more
wiley   +1 more source

High breakdown voltage InAlN/AlN/GaN HEMTs achieved by Schottky-Source technology

open access: yes, 2013
In this paper, we demonstrate 253% improvement in the off-state breakdown voltage (BV) of the lattice-matched In0.17Al0.83N/GaN high-electron-mobility transistors (HEMTs) by using a new Schottky-Source technology.
Zhou, Qi   +6 more
core   +1 more source

Soft, Degradable, and Magnetic Microcarriers for Encapsulation and Guided Transport of Drugs and 3D Spheroids

open access: yesAdvanced Materials, EarlyView.
This work presents soft, degradable hydrogel microcarriers that combine magnetic responsiveness with the ability to host multiple therapeutic and cellular components. Produced by droplet microfluidics, the carriers maintain structural integrity during manipulation, permit controlled breakdown under physiological conditions, and enable guided motion for
Xuan Peng   +18 more
wiley   +1 more source

P-Channel Tri-Gate Nanowire InGaN/GaN/AlN/InAlGaN MOS-HFET for Power Switching Applications

open access: yesIEEE Journal of the Electron Devices Society
This work reports record-high three-terminal on-state drain-source breakdown voltage (BV ${}_{DS}$ ) of -975 V and superior switching characteristics of p-channel InGaN/GaN/AlN/ InAlGaN metal-oxide-semiconductor heterostructure field-effect transistors ...
Jian-Hong Ke   +3 more
doaj   +1 more source

Analysis of breakdown voltage and on resistance of super junction power MOSFET CoolMOSTM using theory of novel voltage sustaining layer

open access: yes, 2002
Conventional VDMOS (vertically double diffused metal oxide semiconductor) Technology for power devices was constrained by the Silicon Limit. This is now improved to have a linear relation between on resistance (Ron) and breakdown voltage (BV) instead of ...
PATIL, MB, KONDEKAR, PN, PARIKH, CD
core   +1 more source

Conductive Additives for Next‐Generation Batteries: Emphasizing the Potential of Bio‐Derived 3D Carbon Architectures at Electrode–Electrolyte Interfaces

open access: yesAdvanced Materials Interfaces, EarlyView.
3D conductive frameworks can maintain continuous electron transport, mechanical stability, and interfacial integrity, helping next‐generation batteries operate more efficiently. This Review examines their relevance to Si anodes, all‐solid‐state batteries, and dry‐processed electrodes, and highlights bio‐derived carbons as sustainable, structurally ...
SeoYoung Ha   +5 more
wiley   +1 more source

Interface‐Engineered Binary Framework Composites: Advancing Porous Materials for Precision Medicine

open access: yesAdvanced Materials Interfaces, EarlyView.
Binary framework composites integrate two complementary porous architectures into a unified platform, enabling multifunctional design, enhanced structural tunability, and improved physicochemical performance. By combining high surface area, ordered porosity, interfacial synergy, and versatile functionalization, these hybrid materials offer new ...
Navid Rabiee   +3 more
wiley   +1 more source

Breakdown Voltage Enhancement in AlGaN HEMTs with Local p-Doped Region in the Back-Barrier

open access: yes, 2022
We employed the local p-doped region with a concentration of 3 × 1016 cm−3, 5 × 1016 cm−3 and 7 × 1016 cm−3 in the back-barrier of full-AlGaN high electron mobility transistors (HEMTs).
Pei Shen   +5 more
core   +1 more source

Multi‐Enzyme Mimetic Molybdenum Nitride Nanozymes Reshape Subgingival Microenvironment for Synergistic Periodontitis Therapy via ROS Regulation and Microbiome Remodeling

open access: yesAdvanced Science, EarlyView.
ABSTRACT Periodontitis, a chronic inflammatory disease initiated and sustained by plaque microorganisms and host immune response, remains an intractable oral disease and a leading cause of tooth loss worldwide. Traditional mechanical debridement and adjunctive antibiotic or antiseptic therapy often shows limited efficacy due to the complex anatomical ...
Weiyu Zhang   +12 more
wiley   +1 more source

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