Results 31 to 40 of about 1,805 (221)

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Normally-Off Trench-Gated AlGaN/GaN Current Aperture Vertical Electron Transistor with Double Superjunction

Technologies
This study proposes an AlGaN/GaN current aperture vertical electron transistor (CAVET) featuring a double superjunction (SJ) to enhance breakdown voltage (BV) and investigates its electrical characteristics via technology computer-aided design (TCAD ...
Jong-Uk Kim, Do-Yeon Park, Byeong-Jun Park, Sung-Ho Hahm   +3 more
doaj   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region

Micromachines
To enhance the electrical safe operation area (eSOA) of laterally diffused metal oxide semiconductor (LDMOS) transistors, a novel reduced surface electric field (Resurf) structure in the n-drift region is proposed, which was fabricated by ion ...
Lianjie Li, Bao Zhu, Xiaohan Wu, Shijin Ding   +3 more
doaj   +1 more source

Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks

Micromachines, 2022
Due to the complexity of the 2D coupling effects in AlGaN/GaN HEMTs, the characterization of a device’s off-state performance remains the main obstacle to exploring the device’s breakdown characteristics. To predict the off-state performance of AlGaN/GaN
Jing Chen, Yufeng Guo, Jun Zhang, Jianhua Liu, Qing Yao, Jiafei Yao, Maolin Zhang, Man Li   +7 more
doaj   +1 more source

Self‐Assembled Monolayers in p–i–n Perovskite Solar Cells: Molecular Design, Interfacial Engineering, and Machine Learning–Accelerated Material Discovery

Advanced Materials, EarlyView.
This review highlights the role of self‐assembled monolayers (SAMs) in perovskite solar cells, covering molecular engineering, multifunctional interface regulation, machine learning (ML) accelerated discovery, advanced device architectures, and pathways toward scalable fabrication and commercialization for high‐efficiency and stable single‐junction and
Asmat Ullah, Ying Luo, Stefaan De Wolf
wiley   +1 more source

Nonwoven‐Based Textile Architectures for Energy Storage Applications: Materials, Preparation, Characterization, and Prospects

Advanced Materials Interfaces, EarlyView.
Nonwoven textile architectures are emerging as versatile platforms for next‐generation energy storage, demonstrating how tailored materials and fabrication strategies enhance ion transport, conductivity, flexibility, and scalability for high‐performance sustainable devices.
Tarikul Islam, Md. Hanif Munshi, Rijon Saha, Shaikh Almoon Hussain, Aqib Adnan Shafin, Shumsul Arefin, Md. Kamruzzaman   +6 more
wiley   +1 more source

P-Channel Tri-Gate Nanowire InGaN/GaN/AlN/InAlGaN MOS-HFET for Power Switching Applications

IEEE Journal of the Electron Devices Society
This work reports record-high three-terminal on-state drain-source breakdown voltage (BV ${}_{DS}$ ) of -975 V and superior switching characteristics of p-channel InGaN/GaN/AlN/ InAlGaN metal-oxide-semiconductor heterostructure field-effect transistors ...
Jian-Hong Ke, Ching-Sung Lee, Chung-Liang Liao, Wei-Chou Hsu   +3 more
doaj   +1 more source

Combating Inflammation and Promoting Anabolism in Osteoarthritic Cartilage Defect With an MMP13‐Sensing Dual‐Drug Scaffold

Advanced Science, EarlyView.
ABSTRACT Osteoarthritis (OA) is a widespread degenerative joint condition marked by progressive cartilage breakdown, and a chronic inflammatory microenvironment, where conventional therapies largely fail to halt disease progression. To address this unmet need, an intra‐articularly implantable, disease‐responsive scaffold was developed for combinatorial
Zhen Zhang, Bangheng Liu, Yulei Mu, Huiqun Zhou, Liang Ma, Chenjie Xu, Dong‐An Wang   +6 more
wiley   +1 more source

Senolytic Therapy as a Preventive Strategy for Spine Degeneration and Pain

Advanced Science, EarlyView.
Cellular senescence promotes inflammation, tissue degeneration, and chronic back pain. In sparc‐null mice, early oral administration of the senolytic agents o‐vanillin and RG‐7112 reduced senescent cell burden and pro‐inflammatory SASP signaling across intervertebral discs, endplates, vertebral bone, and spinal cord.
Saber Ghazizadeh, Hosni Cherif, Matthew Mannarino, Juiena Sagir, Magali Millecamps, Jean A. Ouellet, Laura S. Stone, Lisbet Haglund   +7 more
wiley   +1 more source