Results 31 to 40 of about 19,099,873 (241)

Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation

Micromachines, 2022
A novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp).
Dongyan Zhao, Yubo Wang, Yanning Chen, Jin Shao, Zhen Fu, Baoxing Duan, Fang Liu, Xiuwei Li, Tenghao Li, Xin Yang, Mingzhe Li, Yintang Yang   +11 more
doaj   +1 more source

Digital Cognitive Testing in Mitochondrial Disease: Validity and Challenges for Clinical Trial Use

Annals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Background Primary mitochondrial disease is a group of genetic disorders caused by pathogenic variants in nuclear or mitochondrial DNA, often resulting in progressive neurodegeneration and cognitive decline. Current management is primarily supportive, though recent research offers hope for disease‐modifying treatments in the future.
Oksana Pogoryelova, Jan Smeitink, Herma Renkema, Rosabeth White, Frankie Barton, Rachel Lyon, Jane Newman, Aye Moe, Yi Shiau Ng, Grainne Siobhan Gorman   +9 more
wiley   +1 more source

A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

Chip
GaN power electronic devices, such as the lateral AlGaN/GaN Schottky barrier diode (SBD), have received significant attention in recent years. Many studies have focused on optimizing the breakdown voltage (BV) of the device, with a particular emphasis on
Ru Xu, Peng Chen, Xiancheng Liu, Jianguo Zhao, Tinggang Zhu, Dunjun Chen, Zili Xie, Jiandong Ye, Xiangqian Xiu, Fayu Wan, Jianhua Chang, Rong Zhang, Youdou Zheng   +12 more
doaj   +1 more source

An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method

IEEE Journal of the Electron Devices Society, 2020
To elaborate on the relationship between sophisticated 2-D doping profile of drift region and device's breakdown behavior, a unified analytical model for the SOI LDMOS is developed in this paper.
Kemeng Yang, Yufeng Guo, Jun Zhang, Jiafei Yao, Man Li, Ling Du, Xiaoming Huang   +6 more
doaj   +1 more source

Deep Learning Pose Estimation for Phenotyping of Co‐Occurring Hyperkinetic Movement Disorders

Annals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Objective To explore whether routine outpatient video combined with deep learning‐based pose estimation and clinically interpretable kinematic features can support multi‐label phenotyping of co‐occurring hyperkinetic movement disorders (HMDs).
Laura Cif, Diane Demailly, Gabriella A. Horvàth, Juan Dario Ortigoza Escobar, Nathalie Dorison, Mayté Castro Jiménez, Cécile A. Hubsch, Thomas Wirth, Gun‐Marie Hariz, Sophie Huby, Morgan Dornadic, Zohra Souei, Muhammad Mushhood Ur Rehman, Simone Hemm, Mehdi Boulaymen, Eduardo M. Moraud, Jocelyne Bloch, Xavier Vasques   +17 more
wiley   +1 more source

A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile

IEEE Journal of the Electron Devices Society, 2021
In this article, we investigate a 4H-SiC super- junction (SJ) MOSFET structure with a charge-imbalance doping-profile. According to our numerical simulations and comparisons with the conventional SiC VDMOS (C-VDMOS) and SiC SJ VDMOS (SJ-VDMOS) devices ...
Hao Huang, Ying Wang, Cheng-Hao Yu, Zhao-Huan Tang, Xing-Ji Li, Jian-Qun Yang, Fei Cao   +6 more
doaj   +1 more source

Materials‐Driven Additive Manufacturing for Electrical Machines: Qualification‐Oriented Design Beyond Geometric Freedom

Advanced Engineering Materials, EarlyView.
This perspective reframes additive manufacturing for electrical machines as a qualification‐limited materials and architecture design problem. It links process–structure–property–performance relationships to magnetic, conducting, dielectric, and thermal property windows, highlighting where AM can enable segmented magnetic circuits, permanent magnet ...
Dénes Fodor, Loránd Szabó
wiley   +1 more source

Normally-Off Trench-Gated AlGaN/GaN Current Aperture Vertical Electron Transistor with Double Superjunction

Technologies
This study proposes an AlGaN/GaN current aperture vertical electron transistor (CAVET) featuring a double superjunction (SJ) to enhance breakdown voltage (BV) and investigates its electrical characteristics via technology computer-aided design (TCAD ...
Jong-Uk Kim, Do-Yeon Park, Byeong-Jun Park, Sung-Ho Hahm   +3 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region

Micromachines
To enhance the electrical safe operation area (eSOA) of laterally diffused metal oxide semiconductor (LDMOS) transistors, a novel reduced surface electric field (Resurf) structure in the n-drift region is proposed, which was fabricated by ion ...
Lianjie Li, Bao Zhu, Xiaohan Wu, Shijin Ding   +3 more
doaj   +1 more source