Results 31 to 40 of about 2,260 (262)

Novel Power MOSFET With Partial SiC/Si Heterojunction to Improve Breakdown Voltage by Breakdown Point Transfer (BPT) Terminal Technology

IEEE Journal of the Electron Devices Society, 2020
In this paper, a new vertical double-diffused metal-oxide semiconductor field effect transistors (VDMOS) is proposed with the partial SiC/Si heterojunction (Partial SiC/Si VDMOS) under the drain electrode in this paper for the first time.
Xiameng Wang, Baoxing Duan, Xin Yang, Yintang Yang   +3 more
doaj   +1 more source

Dynamic Breakdown Voltage of GaN Power HEMTs

, 2020
This work develops a new method to measure the transient breakdown voltage (BV) of a non-avalanche device in ultra-short pulses, based on the unclamped inductive switching (UIS) setup.
Kozak, J. P., J. P. Kozak, J. Liu, M. Xiao, Y. Zhang, Zhang, R., R. Zhang, Xiao, M., Q. Song, Liu, J., Song, Q., Zhang, Y.   +11 more
core   +1 more source

Layer interface effects on dielectric breakdown strength of 3D printed rubber insulator using stereolithography [PDF]

, 2021
The use of 3D printing technology enables the fabrication of optimally shaped and functionally graded structured high-voltage solid insulators that could be used efficiently in power grids owing to their compact size and reliability.
Yasuo Suzuoki, Yuya Manabe, Muneaki Kurimoto, Shinichi Mitsumoto, Mitsumoto, Shinichi, Suzuoki, Yasuo, Manabe, Yuya, Kurimoto, Muneaki   +7 more
core   +1 more source

Influence of Terminal Field Plate on Breakdown Voltage in GaN-Based Schottky Barrier Diode

Nantong Daxue xuebao. Ziran kexue ban, 2021
In order to improve the breakdown voltage of the Schottky barrier diode(SBD), a GaN-based SBD with a field plate(FP) structure has been systematically studied.
ZHU Youhua, XUE Haifeng, WANG Meiyu, LI Yi   +3 more
doaj   +1 more source

Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network

Micromachines, 2021
Breakdown voltage (BV), on-state voltage (Von), static latch-up voltage (Vlu), static latch-up current density (Jlu), and threshold voltage (Vth), etc., are critical static characteristic parameters of an IGBT for researchers.
Qing Yao, Yufeng Guo, Bo Zhang, Jing Chen, Jun Zhang, Maolin Zhang, Xiaobo Guo, Jiafei Yao, Weihua Tang, Jianhua Liu   +9 more
doaj   +1 more source

Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes

IEEE Access, 2020
This paper reports the demonstration of a high performance 4H-SiC floating junction junction barrier Schottky (FJ_JBS) rectifier with a 30μm, 6×1015 cm-3-doped epitaxial layer.
Hao Yuan, Chengsen Wang, Xiaoyan Tang, Qingwen Song, Yanjing He, Yimen Zhang, Yuming Zhang, Li Xiao, Liangyong Wang, Yong Wu   +9 more
doaj   +1 more source

A Novel Shielded IGBT (SIGBT) With Integrated Diodes

IEEE Journal of the Electron Devices Society, 2020
A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped P-layer to completely ...
Rongxin Chen, Hao Hu, Yuan Lin, Xing Bi Chen   +3 more
doaj   +1 more source

Rapid Inverse Design of GaN-on-GaN Diode with Guard Ring Termination for BV and (VFQ)^-1Co-Optimization

, 2023
GaN-on-GaN vertical diode is a promising device for next-generation power electronics. Its breakdown voltage (BV) is limited by edge termination designs such as guard rings. The design space of guard rings is huge and it is difficult to optimize manually.
Zhang, Yuhao, Lu, Albert, Wong, Hiu Yung, Yee, Nathan, Porter, Matthew, Wang, Yifan   +5 more
core   +1 more source

Performance analysis of a novel trench SOI LDMOS with centrosymmetric double vertical field plates

Results in Physics, 2019
A novel trench SOI LDMOS with centrosymmetric double vertical field plates structure (CDVFPT SOI LDMOS) is proposed in this paper. The 2-D device simulator MEDICI is used to investigate the characteristics of the proposed structure.
Jianmei Lei, Shengdong Hu, Dong Yang, Ye Huang, Lidong Chen, Jingwei Guo, Chang Liu, Tao Liu, Yuan Wang   +8 more
doaj   +1 more source

Realization of High Current Gain for Van der Waals MoS₂/WSe₂/MoS₂ Bipolar Junction Transistor

Nanomaterials
Two-dimensional (2D) materials have attracted great attention in the past few years and offer new opportunities for the development of high-performance and multifunctional bipolar junction transistors (BJTs). Here, a van der Waals BJT based on vertically
Zezhang Yan, Ningsheng Xu, Shaozhi Deng
doaj   +1 more source