Results 31 to 40 of about 14,848 (235)

A Novel Shielded IGBT (SIGBT) With Integrated Diodes

IEEE Journal of the Electron Devices Society, 2020
A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped P-layer to completely ...
Rongxin Chen, Hao Hu, Yuan Lin, Xing Bi Chen   +3 more
doaj   +1 more source

Performance analysis of a novel trench SOI LDMOS with centrosymmetric double vertical field plates

Results in Physics, 2019
A novel trench SOI LDMOS with centrosymmetric double vertical field plates structure (CDVFPT SOI LDMOS) is proposed in this paper. The 2-D device simulator MEDICI is used to investigate the characteristics of the proposed structure.
Jianmei Lei, Shengdong Hu, Dong Yang, Ye Huang, Lidong Chen, Jingwei Guo, Chang Liu, Tao Liu, Yuan Wang   +8 more
doaj   +1 more source

Realization of High Current Gain for Van der Waals MoS₂/WSe₂/MoS₂ Bipolar Junction Transistor

Nanomaterials
Two-dimensional (2D) materials have attracted great attention in the past few years and offer new opportunities for the development of high-performance and multifunctional bipolar junction transistors (BJTs). Here, a van der Waals BJT based on vertically
Zezhang Yan, Ningsheng Xu, Shaozhi Deng
doaj   +1 more source

Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs [PDF]

, 1996
The authors report how the performance of 0.12 μm GaAs pHEMTs is improved by controlling both the gate recess width, using selective dry etching, and the gate position in the source drain gap, using electron beam lithography.
Asenov, A., Beaumont, S.P., Cameron, N.I., Holland, M.C., McLelland, H., Murad, S., Taylor, M.R.S.   +6 more
core   +1 more source

Application of large area SiPMs for the readout of a plastic scintillator based timing detector [PDF]

, 2017
In this study an array of eight 6 mm x 6 mm area SiPMs was coupled to the end of a long plastic scintillator counter which was exposed to a 2.5 GeV/c muon beam at the CERN PS. Timing characteristics of bars with dimensions 150 cm x 6 cm x 1 cm and 120 cm
Betancourt, C., Blondel, A., Brundler, R., Datwyler, A., Favre, Y., Gascon, D., Gomez, S., Korzenev, A., Mermod, P., Noah, E., Serra, N., Sgalaberna, D., Storaci, B.   +12 more
core   +5 more sources

Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation

Micromachines, 2022
A novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp).
Dongyan Zhao, Yubo Wang, Yanning Chen, Jin Shao, Zhen Fu, Baoxing Duan, Fang Liu, Xiuwei Li, Tenghao Li, Xin Yang, Mingzhe Li, Yintang Yang   +11 more
doaj   +1 more source

Electrical current distribution across a metal-insulator-metal structure during bistable switching

, 2001
Combining scanning electron microscopy (SEM) and electron-beam-induced current (EBIC) imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially confined in areas
Baiatu T., C. Rossel, D. Brémaud, D. Widmer, G. I. Meijer, Kirk H. R., Kirk H. R., Lau W. S., Lin P. S. D., Lin P. S. D., Liu S. G., Tamatsuka M., Waser R., Waser R., Waser R.   +14 more
core   +1 more source

Extremely wideband signal shaping using one- and two-dimensional nonuniform nonlinear transmission lines [PDF]

, 2006
We propose a class of electrical circuits for extremely wideband (EWB) signal shaping. A one-dimensional, nonlinear, nonuniform transmission line is proposed for narrow pulse generation.
Afshari, E., Bhat, H. S., Hajimiri, A., Marsden, J. E.   +3 more
core   +1 more source

Auto‐Generated Valence States in Electrocatalysts for Boosting Oxygen and Hydrogen Evolution Kinetics in Alkaline Water/Alkaline Seawater/Simulated Seawater/Natural Seawater

Advanced Functional Materials, EarlyView.
This review systematically highlights the latest achievements in mixed‐valence states relevant to hydrogen and oxygen evolution reactions, providing essential insights into future directions and methods for large‐scale practical implementation. This critical review is expected to provide an overview of recent advancements in diverse valence‐state metal
Jitendra N. Tiwari, Gokul Bhaskaran, Krishan Kumar, Yun Suk Huh, Young‐Kyu Han   +4 more
wiley   +1 more source

A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

Chip
GaN power electronic devices, such as the lateral AlGaN/GaN Schottky barrier diode (SBD), have received significant attention in recent years. Many studies have focused on optimizing the breakdown voltage (BV) of the device, with a particular emphasis on
Ru Xu, Peng Chen, Xiancheng Liu, Jianguo Zhao, Tinggang Zhu, Dunjun Chen, Zili Xie, Jiandong Ye, Xiangqian Xiu, Fayu Wan, Jianhua Chang, Rong Zhang, Youdou Zheng   +12 more
doaj   +1 more source