Results 21 to 30 of about 1,805 (221)

A Novel AlGaN/Si₃N₄ Compound Buffer Layer HEMT with Improved Breakdown Performances

Micromachines, 2022
In this article, an AlGaN and Si3N4 compound buffer layer high electron mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. In the proposed HEMT, the Si3N4 insulating layer is partially buried between the AlGaN buffer layer and ...
Jingwei Guo, Shengdong Hu, Ping Li, Jie Jiang, Ruoyu Wang, Yuan Wang, Hao Wu   +6 more
doaj   +1 more source

Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes

IEEE Access, 2020
This paper reports the demonstration of a high performance 4H-SiC floating junction junction barrier Schottky (FJ_JBS) rectifier with a 30μm, 6×1015 cm-3-doped epitaxial layer.
Hao Yuan, Chengsen Wang, Xiaoyan Tang, Qingwen Song, Yanjing He, Yimen Zhang, Yuming Zhang, Li Xiao, Liangyong Wang, Yong Wu   +9 more
doaj   +1 more source

Performance analysis of a novel trench SOI LDMOS with centrosymmetric double vertical field plates

Results in Physics, 2019
A novel trench SOI LDMOS with centrosymmetric double vertical field plates structure (CDVFPT SOI LDMOS) is proposed in this paper. The 2-D device simulator MEDICI is used to investigate the characteristics of the proposed structure.
Jianmei Lei, Shengdong Hu, Dong Yang, Ye Huang, Lidong Chen, Jingwei Guo, Chang Liu, Tao Liu, Yuan Wang   +8 more
doaj   +1 more source

Realization of High Current Gain for Van der Waals MoS₂/WSe₂/MoS₂ Bipolar Junction Transistor

Nanomaterials
Two-dimensional (2D) materials have attracted great attention in the past few years and offer new opportunities for the development of high-performance and multifunctional bipolar junction transistors (BJTs). Here, a van der Waals BJT based on vertically
Zezhang Yan, Ningsheng Xu, Shaozhi Deng
doaj   +1 more source

Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation

Micromachines, 2022
A novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp).
Dongyan Zhao, Yubo Wang, Yanning Chen, Jin Shao, Zhen Fu, Baoxing Duan, Fang Liu, Xiuwei Li, Tenghao Li, Xin Yang, Mingzhe Li, Yintang Yang   +11 more
doaj   +1 more source

Deep Learning Pose Estimation for Phenotyping of Co‐Occurring Hyperkinetic Movement Disorders

Annals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Objective To explore whether routine outpatient video combined with deep learning‐based pose estimation and clinically interpretable kinematic features can support multi‐label phenotyping of co‐occurring hyperkinetic movement disorders (HMDs).
Laura Cif, Diane Demailly, Gabriella A. Horvàth, Juan Dario Ortigoza Escobar, Nathalie Dorison, Mayté Castro Jiménez, Cécile A. Hubsch, Thomas Wirth, Gun‐Marie Hariz, Sophie Huby, Morgan Dornadic, Zohra Souei, Muhammad Mushhood Ur Rehman, Simone Hemm, Mehdi Boulaymen, Eduardo M. Moraud, Jocelyne Bloch, Xavier Vasques   +17 more
wiley   +1 more source

A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

Chip
GaN power electronic devices, such as the lateral AlGaN/GaN Schottky barrier diode (SBD), have received significant attention in recent years. Many studies have focused on optimizing the breakdown voltage (BV) of the device, with a particular emphasis on
Ru Xu, Peng Chen, Xiancheng Liu, Jianguo Zhao, Tinggang Zhu, Dunjun Chen, Zili Xie, Jiandong Ye, Xiangqian Xiu, Fayu Wan, Jianhua Chang, Rong Zhang, Youdou Zheng   +12 more
doaj   +1 more source

An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method

IEEE Journal of the Electron Devices Society, 2020
To elaborate on the relationship between sophisticated 2-D doping profile of drift region and device's breakdown behavior, a unified analytical model for the SOI LDMOS is developed in this paper.
Kemeng Yang, Yufeng Guo, Jun Zhang, Jiafei Yao, Man Li, Ling Du, Xiaoming Huang   +6 more
doaj   +1 more source

Experimental Characterization and Constitutive Modeling of the Effect of Prior Inelastic Strain on the Viscoplastic Behavior of AD730 at 700 °C

Advanced Engineering Materials, EarlyView.
This study shows that superalloys used in aircraft engine disks become much more prone to deformation at high temperatures if they have been strained during manufacturing. This effect increases with the level of prior strain but eventually reaches a limit.
Fabio Machado Alves da Fonseca, Patrick Villechaise, Malik Durand, Arnaud Longuet, Florent Coudon, Loïc Signor, Julien De Jaeger, Dominique Eyidi, Nathalie Bozzolo, Jonathan Cormier   +9 more
wiley   +1 more source

A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile

IEEE Journal of the Electron Devices Society, 2021
In this article, we investigate a 4H-SiC super- junction (SJ) MOSFET structure with a charge-imbalance doping-profile. According to our numerical simulations and comparisons with the conventional SiC VDMOS (C-VDMOS) and SiC SJ VDMOS (SJ-VDMOS) devices ...
Hao Huang, Ying Wang, Cheng-Hao Yu, Zhao-Huan Tang, Xing-Ji Li, Jian-Qun Yang, Fei Cao   +6 more
doaj   +1 more source