Results 21 to 30 of about 2,260 (262)
Breakdown voltage characteristics of combined air gaps under negative lightning impulse
Energy Reports, 2022 Long air gaps are the main external insulation medium of overhead transmission lines. When there are floating conductors in the air gap, the gap’s configuration changes, and the combined air gaps is formed. We built an experimental platform to obtain the
Shaocheng Wu +7 more
doaj +1 more source
Results in Physics, 2020 A novel SiC/Si heterojunction lateral double-diffused metal-oxidesemiconductor (LDMOS) with a reversed L-shaped field plate and a stepped oxide layer has been proposed to improve the tradeoff between the breakdown voltage (BV) and specific on-resistance (
Qi Li +8 more
doaj +1 more source
Equivalent model and limit for the SOI lateral power device using high-k dielectric
Results in Physics, 2019 This paper presents a simple and clear equivalent model to investigate the SOI lateral power device using high-k dielectric (HK device). The proposed model can accurately characterize the electric field and facilitate the obtainment of optimal breakdown ...
Jiafei Yao +5 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2022 Breakdown capability of ${\beta }$ -Ga2O3/GaN heterojunction-based vertical p-n power diodes with mesa edge termination (ET) was comprehensively investigated using TCAD simulation.
Dinusha Herath Mudiyanselage +2 more
doaj +1 more source
True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching
, 2021 This work studies the dynamic breakdown voltage (BV) and overvoltage margin of a 650-V-rated commercial GaN power HEMT in hard switching. The dynamic BV measured in the hard switching circuits is over 1.4 kV, being 450 V higher than the static BV ...
Zhang, Yuhao +5 more
core +1 more source
Numerical investigation on L-shaped vertical field plate in high-voltage LDMOS
Results in Physics, 2019 In this work, an L-shaped vertical field plate (LVFP) is introduced in high-voltage lateral double-diffused MOSFET (LDMOS). The LVFP is embedded in an oxide trench that penetrates into the drift region. Compared with the conventional vertical field plate
Yue Hu +5 more
doaj +1 more source
Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination
IEEE Journal of the Electron Devices Society, 2020 Gallium nitride (GaN)-based power devices enable high power density and high switching frequency for power electronics systems. For the emerging vertical GaN devices, the electric field crowding around the edge of the main junction could result in ...
Yuxin Liu, Shu Yang, Kuang Sheng
doaj +1 more source
Micromachines, 2023 In this paper, the transient breakdown voltage (TrBV) of a silicon-on-insulator (SOI) laterally diffused metal-oxide-semiconductor (LDMOS) device was increased by introducing a step P-type doping buried layer (SPBL) below the buried oxide (BOX).
Xiaoming Yang +4 more
doaj +1 more source
Powernet: SOI Lateral Power Device Breakdown Prediction With Deep Neural Networks
IEEE Access, 2020 The breakdown performance is a critical metric for power device design. This paper explores the feasibility of efficiently predicting the breakdown performance of silicon on insulator (SOI) lateral power device using multi-layer neural networks as an ...
Jing Chen +6 more
doaj +1 more source
AN EXPERIMENTAL APPROACH TO COMPARE THE DATA OF THE BREAKDOWN VOLTAGE FOR VARIOUS POWER DEVICES
, 2021 Here, an experimental approach to compare the data of the breakdown voltage for the various power devices has been presented. In the era of electronics devices, there is a demand for higher frequency switches with high breakdown voltage (BV) and small on
PSIT COE, H (via Mendeley Data)
core +1 more source