Results 21 to 30 of about 19,099,873 (241)

Time dependent dielectric breakdown and stress induced leakage current characteristics of 8Å EOT HfO2 N-MOSFETS [PDF]

, 2010
In this work we present the time dependent dielectric breakdown (TDDB) characteristics of LaO capped HfO2 layers with an equivalent oxide thickness of 8Å. The layers show maximum operating voltages in excess of 1V. Such high reliability can be attributed
Ragnarsson, Lars-Ake, Lars-Ake Ragnarsson, O'Connor, Robert, Robert O'Connor, Kauerauf, Thomas, O\u27Connor, Robert, Thomas Kauerauf, Hughes, Greg, Greg Hughes   +8 more
core   +2 more sources

The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure

Crystals, 2020
In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintained ...
Wen-Chieh Ho, Yao-Hsing Liu, Wen-Hsuan Wu, Sung-Wen Huang Chen, Jerry Tzou, Hao-Chung Kuo, Chia-Wei Sun   +6 more
doaj   +1 more source

Influence of Terminal Field Plate on Breakdown Voltage in GaN-Based Schottky Barrier Diode

Nantong Daxue xuebao. Ziran kexue ban, 2021
In order to improve the breakdown voltage of the Schottky barrier diode(SBD), a GaN-based SBD with a field plate(FP) structure has been systematically studied.
ZHU Youhua, XUE Haifeng, WANG Meiyu, LI Yi   +3 more
doaj   +1 more source

Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network

Micromachines, 2021
Breakdown voltage (BV), on-state voltage (Von), static latch-up voltage (Vlu), static latch-up current density (Jlu), and threshold voltage (Vth), etc., are critical static characteristic parameters of an IGBT for researchers.
Qing Yao, Yufeng Guo, Bo Zhang, Jing Chen, Jun Zhang, Maolin Zhang, Xiaobo Guo, Jiafei Yao, Weihua Tang, Jianhua Liu   +9 more
doaj   +1 more source

A Novel Shielded IGBT (SIGBT) With Integrated Diodes

IEEE Journal of the Electron Devices Society, 2020
A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped P-layer to completely ...
Rongxin Chen, Hao Hu, Yuan Lin, Xing Bi Chen   +3 more
doaj   +1 more source

A Novel AlGaN/Si₃N₄ Compound Buffer Layer HEMT with Improved Breakdown Performances

Micromachines, 2022
In this article, an AlGaN and Si3N4 compound buffer layer high electron mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. In the proposed HEMT, the Si3N4 insulating layer is partially buried between the AlGaN buffer layer and ...
Jingwei Guo, Shengdong Hu, Ping Li, Jie Jiang, Ruoyu Wang, Yuan Wang, Hao Wu   +6 more
doaj   +1 more source

Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes

IEEE Access, 2020
This paper reports the demonstration of a high performance 4H-SiC floating junction junction barrier Schottky (FJ_JBS) rectifier with a 30μm, 6×1015 cm-3-doped epitaxial layer.
Hao Yuan, Chengsen Wang, Xiaoyan Tang, Qingwen Song, Yanjing He, Yimen Zhang, Yuming Zhang, Li Xiao, Liangyong Wang, Yong Wu   +9 more
doaj   +1 more source

Performance analysis of a novel trench SOI LDMOS with centrosymmetric double vertical field plates

Results in Physics, 2019
A novel trench SOI LDMOS with centrosymmetric double vertical field plates structure (CDVFPT SOI LDMOS) is proposed in this paper. The 2-D device simulator MEDICI is used to investigate the characteristics of the proposed structure.
Jianmei Lei, Shengdong Hu, Dong Yang, Ye Huang, Lidong Chen, Jingwei Guo, Chang Liu, Tao Liu, Yuan Wang   +8 more
doaj   +1 more source

Investigation of impact of DC component on breakdown characteristics for different electric fields under composite AC & DC voltage

, 2022
The valve side of the converter in the high-voltage direct current is subjected to mixed voltages such as composite AC & DC voltage. In this study, the effects of the homogeneity of electric field on breakdown voltage were investigated for different +
İSPİRLİ, MEHMET MURAT, ORAL, BÜLENT
core   +1 more source

Realization of High Current Gain for Van der Waals MoS₂/WSe₂/MoS₂ Bipolar Junction Transistor

Nanomaterials
Two-dimensional (2D) materials have attracted great attention in the past few years and offer new opportunities for the development of high-performance and multifunctional bipolar junction transistors (BJTs). Here, a van der Waals BJT based on vertically
Zezhang Yan, Ningsheng Xu, Shaozhi Deng
doaj   +1 more source