Results 21 to 30 of about 14,848 (235)

Powernet: SOI Lateral Power Device Breakdown Prediction With Deep Neural Networks

IEEE Access, 2020
The breakdown performance is a critical metric for power device design. This paper explores the feasibility of efficiently predicting the breakdown performance of silicon on insulator (SOI) lateral power device using multi-layer neural networks as an ...
Jing Chen, Mohamed Baker Alawieh, Yibo Lin, Maolin Zhang, Jun Zhang, Yufeng Guo, David Z. Pan   +6 more
doaj   +1 more source

Novel Power MOSFET With Partial SiC/Si Heterojunction to Improve Breakdown Voltage by Breakdown Point Transfer (BPT) Terminal Technology

IEEE Journal of the Electron Devices Society, 2020
In this paper, a new vertical double-diffused metal-oxide semiconductor field effect transistors (VDMOS) is proposed with the partial SiC/Si heterojunction (Partial SiC/Si VDMOS) under the drain electrode in this paper for the first time.
Xiameng Wang, Baoxing Duan, Xin Yang, Yintang Yang   +3 more
doaj   +1 more source

Quantum resistance metrology in graphene [PDF]

, 2008
We have performed a metrological characterization of the quantum Hall resistance in a 1 $\mu$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $\nu=\pm 2$ quantum Hall plateaus vanishes within the measurement noise of 20 m ...
A. J. M. Giesbers, A. K. Geim, Castro Neto A. H., E. Houtzager, G. Rietveld, J. C. Maan, K. S. Novoselov, R. Yang, U. Zeitler   +8 more
core   +3 more sources

The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure

Crystals, 2020
In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintained ...
Wen-Chieh Ho, Yao-Hsing Liu, Wen-Hsuan Wu, Sung-Wen Huang Chen, Jerry Tzou, Hao-Chung Kuo, Chia-Wei Sun   +6 more
doaj   +1 more source

Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs [PDF]

, 2019
The edge termination design strongly affects the ability of a power device to support the desired voltage and its reliable operation. In this paper we present three appropriate termination designs for 10kV n-IGBTs which achieve the desired blocking ...
,, ,, Antoniou, M, Arvanitopoulos, A, Gyftakis, KN, Lophitis, N, Perkins, S, Tiwari, AK, Trajkovic, T, Udrea, F   +9 more
core   +1 more source

Influence of Terminal Field Plate on Breakdown Voltage in GaN-Based Schottky Barrier Diode

Nantong Daxue xuebao. Ziran kexue ban, 2021
In order to improve the breakdown voltage of the Schottky barrier diode(SBD), a GaN-based SBD with a field plate(FP) structure has been systematically studied.
ZHU Youhua, XUE Haifeng, WANG Meiyu, LI Yi   +3 more
doaj   +1 more source

Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network

Micromachines, 2021
Breakdown voltage (BV), on-state voltage (Von), static latch-up voltage (Vlu), static latch-up current density (Jlu), and threshold voltage (Vth), etc., are critical static characteristic parameters of an IGBT for researchers.
Qing Yao, Yufeng Guo, Bo Zhang, Jing Chen, Jun Zhang, Maolin Zhang, Xiaobo Guo, Jiafei Yao, Weihua Tang, Jianhua Liu   +9 more
doaj   +1 more source

Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes

IEEE Access, 2020
This paper reports the demonstration of a high performance 4H-SiC floating junction junction barrier Schottky (FJ_JBS) rectifier with a 30μm, 6×1015 cm-3-doped epitaxial layer.
Hao Yuan, Chengsen Wang, Xiaoyan Tang, Qingwen Song, Yanjing He, Yimen Zhang, Yuming Zhang, Li Xiao, Liangyong Wang, Yong Wu   +9 more
doaj   +1 more source

A Novel AlGaN/Si₃N₄ Compound Buffer Layer HEMT with Improved Breakdown Performances

Micromachines, 2022
In this article, an AlGaN and Si3N4 compound buffer layer high electron mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. In the proposed HEMT, the Si3N4 insulating layer is partially buried between the AlGaN buffer layer and ...
Jingwei Guo, Shengdong Hu, Ping Li, Jie Jiang, Ruoyu Wang, Yuan Wang, Hao Wu   +6 more
doaj   +1 more source

Technology Computer Aided Design Study of GaN MISFET With Double P-Buried Layers

IEEE Access, 2019
In this paper, a performance-improved AlGaN-/GaN-Based metal-insulator-semiconductor field effect transistor (MISFET) with double P-buried layers MISFET (DP-MISFET) is proposed. The proposed structure is simulated, and its characteristics are analyzed by
Ying Wang, Meng-tian Bao, Fei Cao, Jian-xiang Tang, Xin Luo   +4 more
doaj   +1 more source