Micromachines, 2022 This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (VTH) stability.
Hongyue Wang +5 more
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GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance
Micromachines, 2023 A novel VDMOS with the GaN/Si heterojunction (GaN/Si VDMOS) is proposed in this letter to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp) by Breakdown Point Transfer (BPT), which transfers the breakdown point from the high ...
Xin Yang, Baoxing Duan, Yintang Yang
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Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer [PDF]
Advances in Condensed Matter Physics, 2015 In order to achieve a high breakdown voltage (BV) for the SOI (Silicon-On-Insulator) power device in high voltage ICs, a novel high voltage n-channel lateral double-diffused MOS (LDMOS) with a lateral variable interface doping profile (LVID) placed at ...
Jingjing Jin +7 more
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Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET [PDF]
NanomaterialsThis study investigates the degradation mechanisms of 1200 V SiC MOSFETs during High-temperature Reverse Bias (HTRB) reliability testing, focusing on breakdown voltage (BV) reduction.
Mengyuan Yu +3 more
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The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure
Crystals, 2020 In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintained ...
Wen-Chieh Ho +6 more
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ChipGaN power electronic devices, such as the lateral AlGaN/GaN Schottky barrier diode (SBD), have received significant attention in recent years. Many studies have focused on optimizing the breakdown voltage (BV) of the device, with a particular emphasis on
Ru Xu +12 more
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I–V Characteristics and Electrical Reliability of Metal–SixNy–Metal Capacitors as a Function of Nitrogen Bonding Composition [PDF]
MicromachinesIn this study, we analyzed the electrical characteristics of metal–insulator–metal (MIM) capacitors fabricated with reference to insulator (SixNy) thickness and deposition condition.
Tae-Min Choi +5 more
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A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances
Micromachines, 2022 In this article, an AlGaN and Si3N4 compound buffer layer high electron mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. In the proposed HEMT, the Si3N4 insulating layer is partially buried between the AlGaN buffer layer and ...
Jingwei Guo +6 more
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Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
Micromachines, 2021 In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off.
Ki Yeong Kim +3 more
doaj +1 more source
Erratum to: Modeling and experimental study on breakdown voltage (BV) in low speed wire electrical discharge machining (LS-WEDM) of Ti-6Al-4V [PDF]
The International Journal of Advanced Manufacturing Technology, 2017 In this study, the breakdown voltage behavior in low speed wire electrical discharge machining (LS-WEDM) of Ti-6Al-4V (TC4) in the deionized water is investigated. Firstly, the electric field distortion caused by impurity particles including TC4 or brass metal and bubbles is investigated.
Yadong Gong +5 more
openaire +1 more source