Results 11 to 20 of about 19,099,873 (241)
Impulse-driven surface breakdown data : a Weibull statistical analysis [PDF]
, 2012 Surface breakdown of oil-immersed solids chosen to insulate high-voltage, pulsed-power systems is a problem that can lead to catastrophic failure. Statistical analysis of the breakdown voltages, or times, associated with such liquid-solid interfaces can ...
Given, M +7 more
core +4 more sources
Pre-breakdown Characteristics of Contaminated Power Transformer Oil [PDF]
, 2007 In this paper we have studied pre-breakdown characteristics of transformer oil in the presence of different levels of contamination. The contaminant is fibrous dust from pressboard insulation used for high voltage transformers.
Zuber, H M +3 more
core +2 more sources
Short-term Breakdown and Long-term Failure in Nanodielectrics: A Review [PDF]
, 2010 Nanodielectrics, which are concentrated in polymer matrix incorporating nanofillers, have received considerable attention due to their potential benefits as dielectrics.
Li, Shengtao +7 more
core +2 more sources
Numerical investigation on L-shaped vertical field plate in high-voltage LDMOS
Results in Physics, 2019 In this work, an L-shaped vertical field plate (LVFP) is introduced in high-voltage lateral double-diffused MOSFET (LDMOS). The LVFP is embedded in an oxide trench that penetrates into the drift region. Compared with the conventional vertical field plate
Yue Hu +5 more
doaj +1 more source
Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination
IEEE Journal of the Electron Devices Society, 2020 Gallium nitride (GaN)-based power devices enable high power density and high switching frequency for power electronics systems. For the emerging vertical GaN devices, the electric field crowding around the edge of the main junction could result in ...
Yuxin Liu, Shu Yang, Kuang Sheng
doaj +1 more source
Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +3 more
core +1 more source
Advances in Condensed Matter Physics, 2015 In order to achieve a high breakdown voltage (BV) for the SOI (Silicon-On-Insulator) power device in high voltage ICs, a novel high voltage n-channel lateral double-diffused MOS (LDMOS) with a lateral variable interface doping profile (LVID) placed at ...
Jingjing Jin +7 more
doaj +1 more source
Micromachines, 2023 In this paper, the transient breakdown voltage (TrBV) of a silicon-on-insulator (SOI) laterally diffused metal-oxide-semiconductor (LDMOS) device was increased by introducing a step P-type doping buried layer (SPBL) below the buried oxide (BOX).
Xiaoming Yang +4 more
doaj +1 more source
Powernet: SOI Lateral Power Device Breakdown Prediction With Deep Neural Networks
IEEE Access, 2020 The breakdown performance is a critical metric for power device design. This paper explores the feasibility of efficiently predicting the breakdown performance of silicon on insulator (SOI) lateral power device using multi-layer neural networks as an ...
Jing Chen +6 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2020 In this paper, a new vertical double-diffused metal-oxide semiconductor field effect transistors (VDMOS) is proposed with the partial SiC/Si heterojunction (Partial SiC/Si VDMOS) under the drain electrode in this paper for the first time.
Xiameng Wang +3 more
doaj +1 more source