Results 11 to 20 of about 1,805 (221)

Numerical investigation on L-shaped vertical field plate in high-voltage LDMOS

Results in Physics, 2019
In this work, an L-shaped vertical field plate (LVFP) is introduced in high-voltage lateral double-diffused MOSFET (LDMOS). The LVFP is embedded in an oxide trench that penetrates into the drift region. Compared with the conventional vertical field plate
Yue Hu, Zhifeng Liu, Shichang Chen, Jing Wang, Wen-Sheng Zhao, Gaofeng Wang   +5 more
doaj   +1 more source

Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination

IEEE Journal of the Electron Devices Society, 2020
Gallium nitride (GaN)-based power devices enable high power density and high switching frequency for power electronics systems. For the emerging vertical GaN devices, the electric field crowding around the edge of the main junction could result in ...
Yuxin Liu, Shu Yang, Kuang Sheng
doaj   +1 more source

Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer

Advances in Condensed Matter Physics, 2015
In order to achieve a high breakdown voltage (BV) for the SOI (Silicon-On-Insulator) power device in high voltage ICs, a novel high voltage n-channel lateral double-diffused MOS (LDMOS) with a lateral variable interface doping profile (LVID) placed at ...
Jingjing Jin, Shengdong Hu, Yinhui Chen, Kaizhou Tan, Jun Luo, Feng Zhou, Zongze Chen, Ye Huang   +7 more
doaj   +1 more source

Numerical Investigation of Transient Breakdown Voltage Enhancement in SOI LDMOS by Using a Step P-Type Doping Buried Layer

Micromachines, 2023
In this paper, the transient breakdown voltage (TrBV) of a silicon-on-insulator (SOI) laterally diffused metal-oxide-semiconductor (LDMOS) device was increased by introducing a step P-type doping buried layer (SPBL) below the buried oxide (BOX).
Xiaoming Yang, Taiqiang Cao, Xiaohua Zhang, Tianqian Li, Hang Luo   +4 more
doaj   +1 more source

Powernet: SOI Lateral Power Device Breakdown Prediction With Deep Neural Networks

IEEE Access, 2020
The breakdown performance is a critical metric for power device design. This paper explores the feasibility of efficiently predicting the breakdown performance of silicon on insulator (SOI) lateral power device using multi-layer neural networks as an ...
Jing Chen, Mohamed Baker Alawieh, Yibo Lin, Maolin Zhang, Jun Zhang, Yufeng Guo, David Z. Pan   +6 more
doaj   +1 more source

Novel Power MOSFET With Partial SiC/Si Heterojunction to Improve Breakdown Voltage by Breakdown Point Transfer (BPT) Terminal Technology

IEEE Journal of the Electron Devices Society, 2020
In this paper, a new vertical double-diffused metal-oxide semiconductor field effect transistors (VDMOS) is proposed with the partial SiC/Si heterojunction (Partial SiC/Si VDMOS) under the drain electrode in this paper for the first time.
Xiameng Wang, Baoxing Duan, Xin Yang, Yintang Yang   +3 more
doaj   +1 more source

The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure

Crystals, 2020
In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintained ...
Wen-Chieh Ho, Yao-Hsing Liu, Wen-Hsuan Wu, Sung-Wen Huang Chen, Jerry Tzou, Hao-Chung Kuo, Chia-Wei Sun   +6 more
doaj   +1 more source

Influence of Terminal Field Plate on Breakdown Voltage in GaN-Based Schottky Barrier Diode

Nantong Daxue xuebao. Ziran kexue ban, 2021
In order to improve the breakdown voltage of the Schottky barrier diode(SBD), a GaN-based SBD with a field plate(FP) structure has been systematically studied.
ZHU Youhua, XUE Haifeng, WANG Meiyu, LI Yi   +3 more
doaj   +1 more source

Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network

Micromachines, 2021
Breakdown voltage (BV), on-state voltage (Von), static latch-up voltage (Vlu), static latch-up current density (Jlu), and threshold voltage (Vth), etc., are critical static characteristic parameters of an IGBT for researchers.
Qing Yao, Yufeng Guo, Bo Zhang, Jing Chen, Jun Zhang, Maolin Zhang, Xiaobo Guo, Jiafei Yao, Weihua Tang, Jianhua Liu   +9 more
doaj   +1 more source

A Novel Shielded IGBT (SIGBT) With Integrated Diodes

IEEE Journal of the Electron Devices Society, 2020
A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped P-layer to completely ...
Rongxin Chen, Hao Hu, Yuan Lin, Xing Bi Chen   +3 more
doaj   +1 more source