Results 61 to 70 of about 19,099,873 (241)
Advanced Science, EarlyView.TGFBI deficiency elevates O‐GlcNAcylation, promoting the transcriptional activation of ADAMTS16 and OGT‐mediated post‐translational modification of ADAMTS16 at Ser1170. This leads to its stabilization and accumulation, driving chondrocyte metabolic disorders and senescent phenotypes, ultimately resulting in fibrocartilage dysfunction and TMJOA ...
Xin Liu +12 more
wiley +1 more source
Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges
Micromachines, 2018 In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other
Yifei Huang +5 more
doaj +1 more source
Advanced Science, EarlyView.Diabetes‐associated dysbiosis is accompanied by reduced Clostridium abundance, impaired microbial tryptophan metabolism, and lower circulating indole‐3‐propionic acid (IPA). Exogenous IPA improves trabecular microarchitecture and bone formation and restores Nrf2‐associated antioxidant signaling in bone marrow mesenchymal stem cells, limiting iron ...
Jinwu Bai +12 more
wiley +1 more source
A unified analytical design reformulation for static performance optimization in Si, WBG, and UWBG devices [PDF]
AIP AdvancesThis paper presents a unified analytical reformulation and extension of existing drift-region design methods for high-voltage unipolar semiconductor devices.
Woongje Sung, Mohamed Torky
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Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars
Results in Physics, 2020 To reduce specific on-resistance (Ron,sp) of power devices, a novel SOI (silicon-on-insulator) trench gate LDMOS with heavily doping L-shaped P/N pillars and vertical dual-trench-gates is proposed in this paper, and its physical mechanism and electrical ...
Jingwei Guo +6 more
doaj +1 more source
Advanced Science, EarlyView.RCI is associated with functional suppression of oxytocinergic neurons in the PVN. Reduced PVNOXT neuronal activity contributes to altered sympathetic regulation involving the IML–sympathetic chain pathway, accompanied by changes in norepinephrine signaling at the BTI.
Liyang Wan +8 more
wiley +1 more source
Development of high repetition rate VUV lasers [PDF]
, 2015 The work described in this thesis was aimed at developing a field of expertise in short wavelength lasers within the department of Physics and Astronomy at St. Andrews University.
Marsh, Paul N.
core +2 more sources
Advanced Electronic Materials, EarlyView.A compact resistively loaded metamaterial absorber captures RF energy at 2.4 GHz and directs most of the accepted power to modeled loads. The resonant response is confirmed experimentally for the fabricated absorber, while an impedance‐matched rectifier is evaluated through simulation. The stage‐wise results distinguish absorber, rectifier, and cascade
Md. Murad Kabir Nipun, Md. Jahedul Islam
wiley +1 more source
Technology Computer Aided Design Study of GaN MISFET With Double P-Buried Layers
IEEE Access, 2019 In this paper, a performance-improved AlGaN-/GaN-Based metal-insulator-semiconductor field effect transistor (MISFET) with double P-buried layers MISFET (DP-MISFET) is proposed. The proposed structure is simulated, and its characteristics are analyzed by
Ying Wang +4 more
doaj +1 more source
On the Effects of High-K Dielectric RESURF in High-Voltage Bulk FinFETs
IEEE Journal of the Electron Devices Society, 2020 High-K dielectric reduced surface field (RESURF) effects in high-voltage bulk FinFETs through three-dimensional simulation are discussed in this paper for the first time. Compared to a planar gate LDMOSFET where the length of the drift region is the same,
Chia-Hui Cheng +4 more
doaj +1 more source