Results 21 to 30 of about 3,588 (218)

Fast physical models for LDMOS power transistor characterization [PDF]

2011 IEEE MTT-S International Microwave Symposium, 2011
A new quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a “current-driven” form. This process-oriented nonlinear model accounts for thermal effects, avalanche breakdown and gate conduction.
Everett, JP, Kearney, MJ, Rueda, HA, Johnson, EM, Aaen, PH, Wood, J, Snowden, CM   +6 more
openaire   +6 more sources

Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region [PDF]

Micromachines
To enhance the electrical safe operation area (eSOA) of laterally diffused metal oxide semiconductor (LDMOS) transistors, a novel reduced surface electric field (Resurf) structure in the n-drift region is proposed, which was fabricated by ion ...
Lianjie Li, Bao Zhu, Xiaohan Wu, Shijin Ding   +3 more
doaj   +2 more sources

Design of LDMOS Device Modeling Method Based on Neural Network. [PDF]

Comput Intell Neurosci, 2022
The rapid development of power semiconductor devices is helping to realize a low‐carbon society and provide a better life for everyone. Power semiconductors not only are used in many large‐scale industrial control fields such as power transmission and control in power grids, rail transit traction systems, and defense weapons and equipment, but also ...
Liu T, Wen T, Zhang W, He N, Zhang S, Song H.   +5 more
europepmc   +2 more sources

Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield

Active and Passive Electronic Components, 2019
LDMOS devices with grounded gate shield structures variations were simulated and tested, aiming to address hot carrier immunity and robustness concurrently.
Haifeng Mo, Yaohui Zhang, Helun Song
doaj   +2 more sources

DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS

Advances in Condensed Matter Physics, 2015
An N-type 50 V RF LDMOS with a RESURF (reduced surface field) structure of dual field plates (grounded shield, or G-shield) was investigated. The effect of the two field plates and N-drift region, including the junction depth and dopant concentration, on
Xiangming Xu, Pengliang Ci, Xiaoyu Tang, Jing Shi, Zhengliang Zhou, Jingfeng Huang, Peng-Fei Wang, David Wei Zhang   +7 more
doaj   +2 more sources

A Neural Recording and Stimulation Chip with Artifact Suppression for Biomedical Devices. [PDF]

J Healthc Eng, 2021
This paper presents chip implementation of the integrated neural recording and stimulation system with stimulation‐induced artifact suppression. The implemented chip consists of low‐power neural recording circuits, stimulation circuits, and action potential detection circuits.
Liu X, Li J, Chen T, Wang W, Je M.
europepmc   +2 more sources

Novel Si/SiC Heterojunction Lateral Double-Diffused Metal Oxide Semiconductor With SIPOS Field Plate by Simulation Study

IEEE Journal of the Electron Devices Society, 2021
A novel Si/SiC heterojunction Lateral Double-diffused Metal Oxide Semiconductor with the Semi-Insulating Polycrystalline Silicon field plate (SIPOS Si/SiC LDMOS) is proposed in this paper for the first time.
Baoxing Duan, Shaoxuan Xue, Xin Huang, Yintang Yang   +3 more
doaj   +1 more source

Research and design of high voltage radiation hardened lateral diffused metal oxide semiconductor

Fushe yanjiu yu fushe gongyi xuebao, 2022
Lateral diffused metal oxide semiconductors (LDMOS) used in power management integrated circuits demonstrate low anti-radiation performance. To address this issue, a high voltage radiation hardened LDMOS structure was studied, and an N-LDMOS device with ...
CHU Fei, CHEN Hongzhuan, PENG Ling, WANG Ying, NING Jingyi   +4 more
doaj   +1 more source

High Brightness, Highly Directional Organic Light‐Emitting Diodes as Light Sources for Future Light‐Amplifying Prosthetics in the Optogenetic Management of Vision Loss

Advanced Optical Materials, Volume 11, Issue 13, July 4, 2023., 2023
Ultrahigh brightness organic light‐emitting diodes (OLEDs) with highly directional emission are developed and optimized. Analysis of the generated photon flux and device stability indicates that these OLEDs can be useful as light sources in future complementary metal‐oxide‐semiconductor (CMOS) integrated visual prosthetics that serve as light ...
Sabina Hillebrandt, Changmin Keum, Yali Deng, Joël Chavas, Charlie Galle, Thomas Hardin, Francesco Galluppi, Malte C. Gather   +7 more
wiley   +1 more source

500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit

IET Circuits, Devices &Systems, Volume 17, Issue 4, Page 199-204, July 2023., 2023
The authors’ present a LDMOSFET with β‐Ga2O3 for increasing breakdown voltage and power figure of merit. The β‐LDMOSFET structure outperforms performance in the VBR, increasing it to 500 versus 84.4 V in a standard LDMOSFET design. The suggested β‐LDMOSFET has RON ∼ 2.3 m & ohm; cm−2 and increased the PFOM (VBR2/RON) to 108.6 MW/cm2.
Nesa Abedi Rik, Ali. A. Orouji, Dariush Madadi   +2 more
wiley   +1 more source