Results 21 to 30 of about 1,991 (213)

High Brightness, Highly Directional Organic Light‐Emitting Diodes as Light Sources for Future Light‐Amplifying Prosthetics in the Optogenetic Management of Vision Loss

Advanced Optical Materials, Volume 11, Issue 13, July 4, 2023., 2023
Ultrahigh brightness organic light‐emitting diodes (OLEDs) with highly directional emission are developed and optimized. Analysis of the generated photon flux and device stability indicates that these OLEDs can be useful as light sources in future complementary metal‐oxide‐semiconductor (CMOS) integrated visual prosthetics that serve as light ...
Sabina Hillebrandt, Changmin Keum, Yali Deng, Joël Chavas, Charlie Galle, Thomas Hardin, Francesco Galluppi, Malte C. Gather   +7 more
wiley   +1 more source

500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit

IET Circuits, Devices &Systems, Volume 17, Issue 4, Page 199-204, July 2023., 2023
The authors’ present a LDMOSFET with β‐Ga2O3 for increasing breakdown voltage and power figure of merit. The β‐LDMOSFET structure outperforms performance in the VBR, increasing it to 500 versus 84.4 V in a standard LDMOSFET design. The suggested β‐LDMOSFET has RON ∼ 2.3 m & ohm; cm−2 and increased the PFOM (VBR2/RON) to 108.6 MW/cm2.
Nesa Abedi Rik, Ali. A. Orouji, Dariush Madadi   +2 more
wiley   +1 more source

A Process Optimization Method of the Mini‐LOCOS Field Plate Profile for Improving Electrical Characteristics of LDMOS Device

IET Circuits, Devices &Systems, Volume 2023, Issue 1, 2023., 2023
In this work, the effects of the mini‐local oxidation of silicon (LOCOS) field plate’s bottom physical profile on the devices’ breakdown performance are analyzed through technology computer‐aided design simulations. It is indicated that the “abrupt” bottom profile could certainly do with an optimization.
Shaoxin Yu, Weiheng Shao, Pei-Xiong Gao, Xiang Li, Rongsheng Chen, Bin Zhao, Yang Xu   +6 more
wiley   +1 more source

1.2 kV 4H‐SiC planar power MOSFETs with a low‐K dielectric in central gate

IET Circuits, Devices &Systems, Volume 16, Issue 5, Page 419-426, August 2022., 2022
Abstract A 1.2 kV 4H‐SiC planar power MOSFET with a low‐K dielectric in central gate (LK‐MOS) is proposed in this paper. The LK‐MOS features a P+ shielding region and a thick low‐K dielectric layer under the central gate. The insulation layer capacitance is reduced by the thick low‐K dielectric, while the depletion layer capacitance is decreased due to
Dong Liu, Mingyue Li, Yangjie Ou, Zhong Lan, Maosen Tang, Weibo Wang, Xiarong Hu   +6 more
wiley   +1 more source

Research on Silicon‐Based Terahertz Communication Integrated Circuits

Chinese Journal of Electronics, Volume 31, Issue 3, Page 516-533, May 2022., 2022
With the increasing number of users and emerging new applications, the demand for mobile data traffic is growing rapidly. The limited spectrum resources of the traditional microwave and millimeter‐wave frequency bands can no longer support the future wireless communication systems with higher system capacity and data throughput.
Peigen ZHOU, Jixin CHEN, Siyuan TANG, Jiayang YU, Chen WANG, Huanbo LI, Haiyan LU, Pinpin YAN, Debin HOU, Zhe CHEN, Wei HONG   +10 more
wiley   +1 more source

Novel SiC/Si heterojunction LDMOS with electric field modulation effect by reversed L-shaped field plate

Results in Physics, 2020
A novel SiC/Si heterojunction lateral double-diffused metal-oxidesemiconductor (LDMOS) with a reversed L-shaped field plate and a stepped oxide layer has been proposed to improve the tradeoff between the breakdown voltage (BV) and specific on-resistance (
Qi Li, Leilei Yuan, Fabi Zhang, Haiou Li, Gongli Xiao, Yonghe Chen, Tangyou Sun, Xingpeng Liu, Tao Fu   +8 more
doaj   +1 more source

Enhance the ESD Ability of UHV 300-V Circular LDMOS Components by Embedded SCRs and the Robustness P-Body Well

IEEE Journal of the Electron Devices Society, 2021
The ultra-high voltage (UHV) Lateral-diffused MOSFET (LDMOS) transistor has been widely used in power circuit applications and also used as an electrostatic discharge (ESD) self-protection device.
Po-Lin Lin, Shen-Li Chen, Sheng-Kai Fan
doaj   +1 more source

New Super-Junction LDMOS Based on Poly-Si Thin-Film Transistors

IEEE Journal of the Electron Devices Society, 2016
A multi-channel super-junction lateral doubled-diffused MOSFET (SJ-LDMOS) that is developed from thin film transistor technology is proposed. To optimize the breakdown voltage (VBD) and to reduce the specific on-resistance (RSP), a new structure called ...
Jhen-Yu Tsai, Hsin-Hui Hu
doaj   +1 more source

LDMOS power amplifiers with CRLH combiners for LINC transmitters [PDF]

, 2006
An outphasing system at 2.14 GHz using LDMOS power amplifiers with an attempt to use composite right/left handed material transmission (CRLH) lines in the combiner part is presented. Linear amplification using nonlinear components (LINC) is a method that
Budimir, D., Koulouzis, H.
core   +1 more source

Numerical Analysis of the LDMOS With Side Triangular Field Plate

IEEE Journal of the Electron Devices Society, 2019
A Lateral Double-diffused Metal Oxide Semiconductor (LDMOS) with side triangular field plate (STFP) is proposed for improving the breakdown voltage (BV) and reducing the specific on-resistance (Ron,sp). The main feature of the novel LDMOS is the STFPs at
Jiafei Yao, Yu Deng, Yufeng Guo, Zhenyu Zhang, Jun Zhang, Maolin Zhang   +5 more
doaj   +1 more source