Results 11 to 20 of about 1,991 (213)
Design of a Novel W-Sinker RF LDMOS [PDF]
Advances in Condensed Matter Physics, 2015 A novel RF LDMOS device structure and corresponding manufacturing process are presented in this paper. Deep trench W-sinker (tungsten sinker) is employed in this technology to replace the traditional heavily doped diffusion sinker which can shrink chip ...
Xiangming Xu +10 more
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IET Circuits, Devices and Systems, 2022 In this study, design considerations of a new device structure are presented to improve the self‐heating effect (SHE) and the breakdown voltage of the Deep Gate LDMOS (Lateral Double Diffused Metal Oxide Semiconductor) transistor and compared with a ...
Amir Gavoshani, Ali A. Orouji
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Performance analysis of a novel trench SOI LDMOS with centrosymmetric double vertical field plates [PDF]
Results in Physics, 2019 A novel trench SOI LDMOS with centrosymmetric double vertical field plates structure (CDVFPT SOI LDMOS) is proposed in this paper. The 2-D device simulator MEDICI is used to investigate the characteristics of the proposed structure.
Jianmei Lei +8 more
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Advances in Condensed Matter Physics, 2015 In order to achieve a high breakdown voltage (BV) for the SOI (Silicon-On-Insulator) power device in high voltage ICs, a novel high voltage n-channel lateral double-diffused MOS (LDMOS) with a lateral variable interface doping profile (LVID) placed at ...
Jingjing Jin +7 more
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Mismatch sources in LDMOS devices [PDF]
2010 Proceedings of the European Solid State Device Research Conference, 2010 This paper discusses the influence of different sources of DC parametric mismatch in an LDMOS. By comparing measurements and statistical simulations the impact on mismatch of the most important fluctuation causes is qualitatively evaluated. We demonstrate that, whereas the shape of the doping profile in the channel has little effect, both interface ...
Andricciola, Pietro +2 more
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Design of LDMOS Device Modeling Method Based on Neural Network. [PDF]
Comput Intell Neurosci, 2022 The rapid development of power semiconductor devices is helping to realize a low‐carbon society and provide a better life for everyone. Power semiconductors not only are used in many large‐scale industrial control fields such as power transmission and control in power grids, rail transit traction systems, and defense weapons and equipment, but also ...
Liu T +5 more
europepmc +2 more sources
Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield
Active and Passive Electronic Components, 2019 LDMOS devices with grounded gate shield structures variations were simulated and tested, aiming to address hot carrier immunity and robustness concurrently.
Haifeng Mo, Yaohui Zhang, Helun Song
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DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS
Advances in Condensed Matter Physics, 2015 An N-type 50 V RF LDMOS with a RESURF (reduced surface field) structure of dual field plates (grounded shield, or G-shield) was investigated. The effect of the two field plates and N-drift region, including the junction depth and dopant concentration, on
Xiangming Xu +7 more
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A Neural Recording and Stimulation Chip with Artifact Suppression for Biomedical Devices. [PDF]
J Healthc Eng, 2021 This paper presents chip implementation of the integrated neural recording and stimulation system with stimulation‐induced artifact suppression. The implemented chip consists of low‐power neural recording circuits, stimulation circuits, and action potential detection circuits.
Liu X, Li J, Chen T, Wang W, Je M.
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Research and design of high voltage radiation hardened lateral diffused metal oxide semiconductor
Fushe yanjiu yu fushe gongyi xuebao, 2022 Lateral diffused metal oxide semiconductors (LDMOS) used in power management integrated circuits demonstrate low anti-radiation performance. To address this issue, a high voltage radiation hardened LDMOS structure was studied, and an N-LDMOS device with ...
CHU Fei +4 more
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