Results 11 to 20 of about 3,588 (218)
Numerical Investigation of Transient Breakdown Voltage Enhancement in SOI LDMOS by Using a Step P-Type Doping Buried Layer [PDF]
Micromachines, 2023 In this paper, the transient breakdown voltage (TrBV) of a silicon-on-insulator (SOI) laterally diffused metal-oxide-semiconductor (LDMOS) device was increased by introducing a step P-type doping buried layer (SPBL) below the buried oxide (BOX).
Xiaoming Yang +4 more
doaj +2 more sources
A TCAD Study on High-Voltage Superjunction LDMOS with Variable-K Dielectric Trench [PDF]
Micromachines, 2022 In this paper, a novel high voltage superjunction lateral double diffused MOSFETs (SJ-LDMOS) using a variable high permittivity (VHK) dielectric trench is presented.
Zhen Cao +5 more
doaj +2 more sources
IET Circuits, Devices and Systems, 2022 In this study, design considerations of a new device structure are presented to improve the self‐heating effect (SHE) and the breakdown voltage of the Deep Gate LDMOS (Lateral Double Diffused Metal Oxide Semiconductor) transistor and compared with a ...
Amir Gavoshani, Ali A. Orouji
doaj +2 more sources
Results in Physics, 2022 This paper investigates the double dielectrics enhancement LDMOS (DDE LDMOS) with high-k field dielectric and low-k buried dielectric. The analytical models of the potential and electric field, optimal breakdown voltage and drift doping concentration are
Man Li, Sheng-Li Zhang, Yu-Feng Guo
exaly +3 more sources
A Trench Heterojunction Diode-Integrated 4H-SiC LDMOS with Enhanced Reverse Recovery Characteristics [PDF]
MicromachinesIn this paper, a novel 4H-SiC LDMOS structure with a trench heterojunction in the source (referred as to THD-LDMOS) is proposed and investigated for the first time, to enhance the reverse recovery performance of its parasitic diode. Compared with 4H-SiC,
Yanjuan Liu, Fangfei Bai, Junpeng Fang
doaj +2 more sources
A FIN-LDMOS with Bulk Electron Accumulation Effect. [PDF]
Micromachines (Basel), 2023 A thin Silicon-On-Insulator (SOI) LDMOS with ultralow Specific On-Resistance (Ron,sp) is proposed, and the physical mechanism is investigated by Sentaurus. It features a FIN gate and an extended superjunction trench gate to obtain a Bulk Electron Accumulation (BEA) effect.
Chen W, Duan Z, Zhang H, Han Z, Wang Z.
europepmc +4 more sources
Design of dual-band power amplifier using bandstop filter and dual-mode bias circuit for multistandard transceiver systems [PDF]
Scientific Reports, 2023 This paper presents a dual-band power amplifier (PA) using a meandered line bandstop filter (BSF). An important challenge addressed in this design is to achieve proper isolation between the operational bands of the amplifier.
Sepehr Zarghami, Mohsen Hayati
doaj +2 more sources
Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layer [PDF]
Nanoscale Research Letters, 2019 An ultra-low specific on-resistance (R on,sp) lateral double-diffused metal-oxide-semiconductor transistor (LDMOS) with enhanced dual-gate and partial P-buried layer is proposed and investigated in this paper.
Zhuo Wang +5 more
doaj +2 more sources
Advances in Condensed Matter Physics, 2015 In order to achieve a high breakdown voltage (BV) for the SOI (Silicon-On-Insulator) power device in high voltage ICs, a novel high voltage n-channel lateral double-diffused MOS (LDMOS) with a lateral variable interface doping profile (LVID) placed at ...
Jingjing Jin +7 more
doaj +2 more sources
Design of a Novel W-Sinker RF LDMOS
Advances in Condensed Matter Physics, 2015 A novel RF LDMOS device structure and corresponding manufacturing process are presented in this paper. Deep trench W-sinker (tungsten sinker) is employed in this technology to replace the traditional heavily doped diffusion sinker which can shrink chip ...
Xiangming Xu +10 more
doaj +2 more sources