Results 41 to 50 of about 236 (173)
Hot-Carrier-Induced Reliability for Lateral DMOS Transistors With Split-STI Structures
IEEE Journal of the Electron Devices Society, 2021 In this work, four kinds of lateral double-diffused MOS (LDMOS) devices with different split shallow trench isolation (STI) structures (Device A: LDMOS with traditional split-STI, Device B: LDMOS with slope-STI, Device C with step-STI and Device D with H-
Li Lu +7 more
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LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification
IEEE Journal of the Electron Devices Society, 2022 We analytically and numerically investigate the performance of Laterally-Diffused Metal-Oxide-Semiconductor (LDMOS) transistors with Semi-circular Field OXide (S-FOX) focusing on mid-voltage (30 V – 100 V) power applications.
Ali Saadat +3 more
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A Zero-Cost Technique to Improve ON-State Performance and Reliability of Power LDMOS Transistors
IEEE Journal of the Electron Devices Society, 2021 In this paper, we have proposed a simple and zero-cost technique to improve ON-state and reliability performance of LDMOS transistors. We introduced doping gradient in the channel by optimizing position of the P-Well mask during test structure design ...
Kumari Neeraj Kaushal +1 more
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On the modeling of LDMOS RF power transistors
IEEE Custom Integrated Circuits Conference 2010, 2010 In this review we present a technology-independent approach to the construction of a circuit model for a high-power radio-frequency (RF) LDMOS FET. We compare and contrast this approach with other MOSFET modeling approaches used for digital and RF CMOS applications.
John Wood, Peter H. Aaen
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Mismatch sources in LDMOS devices [PDF]
2010 Proceedings of the European Solid State Device Research Conference, 2010 This paper discusses the influence of different sources of DC parametric mismatch in an LDMOS. By comparing measurements and statistical simulations the impact on mismatch of the most important fluctuation causes is qualitatively evaluated. We demonstrate that, whereas the shape of the doping profile in the channel has little effect, both interface ...
Andricciola, Pietro +2 more
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AIP Advances, 2017 The use of contact etching stop layer (CESL) stressors is a popular technique for introducing stress into a transistor channel. However, when tensile stress is applied to an n-type lateral double-diffused metal-oxide-semiconductor ...
Xiangzhan Wang +5 more
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Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi‐Saturation Effect
Active and Passive Electronic Components, Volume 2019, Issue 1, 2019., 2019 This paper discusses linearity and robustness together for the first time, disclosing a way to improve them. It reveals that the nonlinear transconductance with device working at quasi‐saturation region is significant factor of device linearity. The peak electric field is the root cause of electron velocity saturation.
Haifeng Mo +3 more
wiley +1 more source
A Novel p-LDMOS Additionally Conducting Electrons by Control ICs
IEEE Journal of the Electron Devices Society, 2019 A silicon-on-insulator (SOI) p-channel lateral double-diffused MOSFET (p-LDMOS), conducting not only holes but also electrons, is proposed and investigated by TCAD simulations. Its most important advantage is the greatly improved relationship between the
Songnan Guo, Xing Bi Chen
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Neurospace Mapping Modeling for Packaged Transistors
Mathematical Problems in Engineering, Volume 2018, Issue 1, 2018., 2018 This paper presents a novel Neurospace Mapping (Neuro‐SM) method for packaged transistor modeling. A new structure consisting of the input package module, the nonlinear module, the output package module, and the S‐Matrix calculation module is proposed for the first time. The proposed method can develop the model only using the terminal signals, instead
Shuxia Yan +5 more
wiley +1 more source
A Review of 5G Power Amplifier Design at cm‐Wave and mm‐Wave Frequencies
Wireless Communications and Mobile Computing, Volume 2018, Issue 1, 2018., 2018 The 5G wireless revolution presents some dramatic challenges to the design of handsets and communication infrastructures, as 5G targets higher than 10 Gbps download speed using millimeter‐wave (mm‐Wave) spectrum with multiple‐input multiple‐output (MIMO) antennas, connecting densely deployed wireless devices for Internet‐of‐Everything (IoE), and very ...
D. Y. C. Lie +4 more
wiley +1 more source