Results 41 to 50 of about 1,991 (213)
Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi‐Saturation Effect
Active and Passive Electronic Components, Volume 2019, Issue 1, 2019., 2019 This paper discusses linearity and robustness together for the first time, disclosing a way to improve them. It reveals that the nonlinear transconductance with device working at quasi‐saturation region is significant factor of device linearity. The peak electric field is the root cause of electron velocity saturation.
Haifeng Mo +3 more
wiley +1 more source
Neurospace Mapping Modeling for Packaged Transistors
Mathematical Problems in Engineering, Volume 2018, Issue 1, 2018., 2018 This paper presents a novel Neurospace Mapping (Neuro‐SM) method for packaged transistor modeling. A new structure consisting of the input package module, the nonlinear module, the output package module, and the S‐Matrix calculation module is proposed for the first time. The proposed method can develop the model only using the terminal signals, instead
Shuxia Yan +5 more
wiley +1 more source
A Novel p-LDMOS Additionally Conducting Electrons by Control ICs
IEEE Journal of the Electron Devices Society, 2019 A silicon-on-insulator (SOI) p-channel lateral double-diffused MOSFET (p-LDMOS), conducting not only holes but also electrons, is proposed and investigated by TCAD simulations. Its most important advantage is the greatly improved relationship between the
Songnan Guo, Xing Bi Chen
doaj +1 more source
A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer
Results in Physics, 2018 A novel silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) structure has been proposed. The new structure features a substrate field plate (SFP) and a variable-k dielectric buried layer (VKBL).
Qi Li +6 more
doaj +1 more source
A Review of 5G Power Amplifier Design at cm‐Wave and mm‐Wave Frequencies
Wireless Communications and Mobile Computing, Volume 2018, Issue 1, 2018., 2018 The 5G wireless revolution presents some dramatic challenges to the design of handsets and communication infrastructures, as 5G targets higher than 10 Gbps download speed using millimeter‐wave (mm‐Wave) spectrum with multiple‐input multiple‐output (MIMO) antennas, connecting densely deployed wireless devices for Internet‐of‐Everything (IoE), and very ...
D. Y. C. Lie +4 more
wiley +1 more source
High figure-of-merit SOI power LDMOS for power integrated circuits
Engineering Science and Technology, an International Journal, 2015 The structural modifications in the conventional power laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOS) are carried out to improve the breakdown voltage, on-resistance, gate-charge and figure-of-merits of the device with ...
Yashvir Singh, Rahul Singh Rawat
doaj +1 more source
Modeling and Simulation of LDMOS Device
International Journal of Engineering Research, 2015 Laterally Diffused MOSFET (LDMOS) are widely used in modern communication industry and other applications. LDMOS offers various advantages over conventional MOSFETs with little process change. In the present paper, an LDMOS device is modeled and simulated in SILVACO device simulator package using the ATHENA and ATLAS modules.
Sunitha HD, Keshaveni N
openaire +1 more source
Bringing MRI to low‐ and middle‐income countries: Directions, challenges and potential solutions
NMR in Biomedicine, Volume 37, Issue 7, July 2024.While MRI technology has advanced, several socioeconomic and technological challenges remain as barriers to MRI access globally. In this paper, we have described a holistic framework that tackles numerous different aspects to provide a structure for future research and development.
Sanjana Murali +10 more
wiley +1 more source
A novel ESD design for 800v Ldmos with robustness [PDF]
, 2010 [[abstract]]ABSTRACT In the power management applications, the lateral double-diffusion MOS (LDMOS) transistor with high breakdown voltage has long been integrated monolithically in IC process.
Sarangua Enkhbaatar
core
2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol [PDF]
, 2013 250 W LDMOS power transistor for base station applications at frequencies ...
Power Ldmos Transistor, High Efficiency
core +2 more sources