Results 61 to 70 of about 1,991 (213)
High-voltage (100 V) ChipfilmTM single-crystal silicon LDMOS transistor for integrated driver circuits in flexible displays [PDF]
Advances in Radio Science, 2009 System-in-Foil (SiF) is an emerging field of large-area polymer electronics that employs new materials such as conductive polymers and electrophoretic micro-capsules (E-Ink) along with ultra-thin and thus flexible chips.
J. N. Burghartz, H. Richter, A. Asif
doaj
MOOSE: A Physically Based Compact DC Model of SOI LDMOSFETs for Analogue Circuit Simulation [PDF]
, 2004 In this paper, we present a compact model for silicon-on-insulator (SOI) laterally double diffused (LD) MOSFETs. The model is complete insofar as it uses no subcircuits, and is intended to predict device operation in all regions of bias.
Swanenberg, M. +4 more
core
Unified Analytical Model for SOI LDMOS With Electric Field Modulation
IEEE Journal of the Electron Devices Society, 2020 The unified analytical model is proposed for SOI LDMOS (Silicon On Insulator Lateral Double-diffused Metal Oxide Semiconductor) based on the electric field modulation in this paper for the first time.
Baoxing Duan +3 more
doaj +1 more source
, 2010 135 W LDMOS power transistor for base station applications at frequencies ...
Power Ldmos Transistor
core
Table 1. Typical performance [PDF]
, 2014 50 W LDMOS power transistor for base station applications at frequencies ...
Wimax Power Ldmos Transistor
core
InGaAs LDMOS power semiconductor device performances [PDF]
, 2009 An n-channel In0.65Ga0.35As LDMOS with Al 2O3 as gate dielectric is proposed. Power device parameters such as specific on-resistance, gate charge, and breakdown voltage are examined using two-dimensional device simulation.
Jason Steighner +5 more
core +1 more source
Table 1. Typical performance [PDF]
, 2011 100 W LDMOS power transistor for base station applications at frequencies ...
Wimax Power Ldmos Transistor
core
The effect of void on characteristics of LDMOS power amplifier [PDF]
, 2016 Click on the DOI link to access the article (may not be free).The effect of void on characteristics of the laterally diffused metal oxide semiconductor (LDMOS) power amplifier (PA) is analyzed using the thermal and circuit analysis together.
Hyuncheol Park +7 more
core +1 more source
120V Low Side LDMOS Device with Sided Isolation of 0.35μm CMOS Compatible Process
MATEC Web of Conferences, 2018 In this paper, a novel 120V multiple RESURF lateral double-diffused MOS (LDMOS) transistor with shallow trench isolation (STI) structure in low side is developed and successfully simulated.
Deivasigamani Ravi +5 more
doaj +1 more source
Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars
Results in Physics, 2020 To reduce specific on-resistance (Ron,sp) of power devices, a novel SOI (silicon-on-insulator) trench gate LDMOS with heavily doping L-shaped P/N pillars and vertical dual-trench-gates is proposed in this paper, and its physical mechanism and electrical ...
Jingwei Guo +6 more
doaj +1 more source