High-voltage (100 V) ChipfilmTM single-crystal silicon LDMOS transistor for integrated driver circuits in flexible displays [PDF]
Advances in Radio Science, 2009 System-in-Foil (SiF) is an emerging field of large-area polymer electronics that employs new materials such as conductive polymers and electrophoretic micro-capsules (E-Ink) along with ultra-thin and thus flexible chips.
J. N. Burghartz, H. Richter, A. Asif
doaj
Unified Analytical Model for SOI LDMOS With Electric Field Modulation
IEEE Journal of the Electron Devices Society, 2020 The unified analytical model is proposed for SOI LDMOS (Silicon On Insulator Lateral Double-diffused Metal Oxide Semiconductor) based on the electric field modulation in this paper for the first time.
Baoxing Duan +3 more
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120V Low Side LDMOS Device with Sided Isolation of 0.35μm CMOS Compatible Process
MATEC Web of Conferences, 2018 In this paper, a novel 120V multiple RESURF lateral double-diffused MOS (LDMOS) transistor with shallow trench isolation (STI) structure in low side is developed and successfully simulated.
Deivasigamani Ravi +5 more
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Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars
Results in Physics, 2020 To reduce specific on-resistance (Ron,sp) of power devices, a novel SOI (silicon-on-insulator) trench gate LDMOS with heavily doping L-shaped P/N pillars and vertical dual-trench-gates is proposed in this paper, and its physical mechanism and electrical ...
Jingwei Guo +6 more
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Characterization and Modeling of SH in Multi-Finger RF LDMOS Transistors Using BSIM-BULK Model
IEEE Journal of the Electron Devices SocietyIn this work, we present self-heating (SH) characterization and modeling of 130 nm Bipolar-CMOS-DMOS (BCD) technology node multi-finger Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) transistors using extensive DC and S-parameter ...
Ayushi Sharma +5 more
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Numerical investigation on L-shaped vertical field plate in high-voltage LDMOS
Results in Physics, 2019 In this work, an L-shaped vertical field plate (LVFP) is introduced in high-voltage lateral double-diffused MOSFET (LDMOS). The LVFP is embedded in an oxide trench that penetrates into the drift region. Compared with the conventional vertical field plate
Yue Hu +5 more
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IEEE Journal of the Electron Devices Society, 2020 To elaborate on the relationship between sophisticated 2-D doping profile of drift region and device's breakdown behavior, a unified analytical model for the SOI LDMOS is developed in this paper.
Kemeng Yang +6 more
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Reduction of Self-heating effect in LDMOS devices
CoRR, 2016 17 pages, 5 ...
Tapas Kumar Maiti, Chinmay K. Maiti
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Optimizing Shortwave Wideband RF Amplifier: Study of Transmission Line Transformer Construction Methods [PDF]
RadioengineeringThis paper presents a study of six physical transmission line transformers (TLTs) designed to provide wideband output matching for laterally diffused metal oxide semiconductor (LDMOS) transistors within a push-pull amplifier operating in the 1.8-30 MHz ...
G. Krupa, G. Budzyn
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A Trench LDMOS Improved by Quasi Vertical Super Junction and Resistive Field Plate
IEEE Journal of the Electron Devices Society, 2019 An improved trench lateral double-diffused MOSFET (T-LDMOS) is proposed. It has a quasi vertical super junction (QVSJ) drift region and adopts a resistive field plate (RFP) to help QVSJ satisfy charge-balance.
Junji Cheng +4 more
doaj +1 more source