Results 71 to 80 of about 1,991 (213)

Improved LDMOS performance with buried multi-finger gates [PDF]

, 2014
SOI LDMOS with buried multi-finger gates (BFG) is proposed and fabricated. The BFG acts as field plate, modulating the lateral electric field distribution in the drift region (off-state) and enhances the carrier accumulation at the surface of the drift ...
Liu, Linjie, Xia, Chao, Wang, Zhongjian, Xu, Dawei, Trellenkamp, Stefan, Cheng, Xinhong, Cao, Duo, Yu, Yuehui, Mantl, Siegfried, Zhao, Qing-Tai   +9 more
core   +1 more source

Mode of operation f VDS PL(AV) Gp ηD ACPR [PDF]

, 2010
40 W LDMOS power transistor for base station applications at frequencies ...
Power Ldmos Transistor, Product Profile
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SPICE model of LDMOS structure [PDF]

, 2019
V této bakalářské práci je provedeno porovnání struktury LDMOS oproti konvenční MOS struktuře. Anomální efekty, výzvy, které tato struktura přináší do oblasti modelování a charakterizace jsou popsány v první kapitole. Další část této práce se zaměřuje na
Loginov, Dmitrii
core   +2 more sources

Characterization and Modeling of SH in Multi-Finger RF LDMOS Transistors Using BSIM-BULK Model

IEEE Journal of the Electron Devices Society
In this work, we present self-heating (SH) characterization and modeling of 130 nm Bipolar-CMOS-DMOS (BCD) technology node multi-finger Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) transistors using extensive DC and S-parameter ...
Ayushi Sharma, Shivendra Singh Parihar, Anirban Kar, Weike Wang, Kimihiko Imura, Yogesh Singh Chauhan   +5 more
doaj   +1 more source

1.2 Features and benefits Excellent ruggedness [PDF]

, 2013
100 W LDMOS power transistor for base station applications at frequencies ...
Power Ldmos Transistor, High Efficiency
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Numerical investigation on L-shaped vertical field plate in high-voltage LDMOS

Results in Physics, 2019
In this work, an L-shaped vertical field plate (LVFP) is introduced in high-voltage lateral double-diffused MOSFET (LDMOS). The LVFP is embedded in an oxide trench that penetrates into the drift region. Compared with the conventional vertical field plate
Yue Hu, Zhifeng Liu, Shichang Chen, Jing Wang, Wen-Sheng Zhao, Gaofeng Wang   +5 more
doaj   +1 more source

Reduction of Self-heating effect in LDMOS devices

CoRR, 2016
17 pages, 5 ...
Tapas Kumar Maiti, Chinmay K. Maiti
openaire   +2 more sources

Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight [PDF]

, 2010
Degradation induced by hot-carrier stress (HCS) in a Multi-STI-Finger (MF) LDMOS is analyzed through both electrical measurements and TCAD simulations. The critical HCS issues have been first addressed on a conventional STIbased LDMOS.
R. Wise, A. Gnudi, BACCARANI, GIORGIO, S. Poli, GNANI, ELENA, REGGIANI, SUSANNA, S. Reggiani, A. Loi, G. Baccarani, S. Pendharkar, E. Gnani, POLI, STEFANO, GNUDI, ANTONIO, M. Denison, S. Seetharaman   +14 more
core   +1 more source

An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method

IEEE Journal of the Electron Devices Society, 2020
To elaborate on the relationship between sophisticated 2-D doping profile of drift region and device's breakdown behavior, a unified analytical model for the SOI LDMOS is developed in this paper.
Kemeng Yang, Yufeng Guo, Jun Zhang, Jiafei Yao, Man Li, Ling Du, Xiaoming Huang   +6 more
doaj   +1 more source

Development of ESD Robustness Enhancement of a Novel 800V LDMOS Multiple RESURF with Linear P-top Rings [PDF]

, 2012
[[abstract]]"In this work, a novel 800V multiple RESURF LDMOS structures with or without P+ insertion region next to drain were developed to study the enhancement of ESD robustness.
蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming
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