Results 71 to 80 of about 2,599 (207)

Numerical and experimental investigation of temperature dependence vs. mobility degradation on I–V characteristics in N-LDMOS structure

Case Studies in Thermal Engineering
The thermal behavior analysis is undoubtedly the main concern when studying semiconductor devices' and structures' physical mechanics. To the best of our knowledge, simulations studies with an experimental validation of the temperature effect vs ...
Mohammed Almatrafi, Mohamed Ali Belaïd
doaj   +1 more source

Table 1. Typical performance

, 2011
100 W LDMOS power transistor for base station applications at frequencies ...
Wimax Power Ldmos Transistor
core  

LDMOS tehovahvistimen suunnittelu WCDMA-tukiasemiin

, 2002
Tässä diplomityössä käsitellään ja tutkitaan LDMOS-transistoriteknologian soveltuvuutta WCDMA-järjestelmän tukiaseman tehovahvistinsovelluksiin. Diplomityön ensimmäinen osa käsittelee yleistä tehovahvistimen teoriaa ja erityisiä WCDMA-järjestelmän ...
Kunnari, Matti
core   +1 more source

Optimizing Shortwave Wideband RF Amplifier: Study of Transmission Line Transformer Construction Methods [PDF]

Radioengineering
This paper presents a study of six physical transmission line transformers (TLTs) designed to provide wideband output matching for laterally diffused metal oxide semiconductor (LDMOS) transistors within a push-pull amplifier operating in the 1.8-30 MHz ...
G. Krupa, G. Budzyn
doaj  

Development and Evaluation of SiC LDMOS for High-Temperature Applications

IEEE Journal of the Electron Devices Society
This paper proposes and experimentally evaluates SiC laterally diffused metal-oxide-semiconductor (LDMOS) devices fabricated on two full 4H-SiC processes with P-type and N-type epitaxial layers.
Pengyu Lai, Hui Wang, H. Alan Mantooth, Zhong Chen   +3 more
doaj   +1 more source

The Simulation Study of the SOI Trench LDMOS With Lateral Super Junction

IEEE Journal of the Electron Devices Society, 2018
A novel lateral double diffused metal oxide semiconductor (LDMOS) with trench oxide layer, featuring a lateral super junction structure based on the silicon-on-insulator technology is proposed.
Weizhong Chen, Lijun He, Zhengsheng Han, Yi Huang   +3 more
doaj   +1 more source

A FIN-LDMOS with Bulk Electron Accumulation Effect. [PDF]

Micromachines (Basel), 2023
Chen W, Duan Z, Zhang H, Han Z, Wang Z.
europepmc   +1 more source

� Enhanced ruggedness

, 2010
135 W LDMOS power transistor for base station applications at frequencies ...
Power Ldmos Transistor
core  

Study Of Ingaas Ldmos For Power Conversion Applications [PDF]

, 2009
In this work an n-channel In0.65Ga0.35As LDMOS with Al2O3 as gate dielectric is investigated. Instead of using traditional Si process for LDMOS, we suggest In0.65Ga0.35As as substitute material due to its higher electron mobility and its promising for ...
Liu, Yidong
core  

InGaAs LDMOS power semiconductor device performances

, 2009
An n-channel In0.65Ga0.35As LDMOS with Al 2O3 as gate dielectric is proposed. Power device parameters such as specific on-resistance, gate charge, and breakdown voltage are examined using two-dimensional device simulation.
Jason Steighner, Yuan, Jiann Shiun, Steighner, Jason, Liu, Yidong, Jiann-Shiun Yuan, Yidong Liu   +5 more
core   +1 more source