Results 71 to 80 of about 236 (173)

A Substrate-Dissipating (SD) Mechanism for a Ruggedness-Improved SOI LDMOS Device

IEEE Journal of the Electron Devices Society, 2018
An SOI LDMOS device with improved ruggedness under unclamped inductive switching (UIS) is described based on the substrate-dissipating (SD) mechanism.
Bing Wang, Zhigang Wang, James B. Kuo
doaj   +1 more source

Parameter Extraction for the PSPHV LDMOS Transistor Model

IEEE Journal of the Electron Devices Society, 2020
This paper details a robust parameter extraction flow for the PSPHV LDMOS transistor model. The procedure uses a global scaling parameter set and accounts for self-heating.
Kejun Xia, Colin C. McAndrew, Ronald Van Langevelde   +2 more
doaj   +1 more source

Numerical and experimental investigation of temperature dependence vs. mobility degradation on I–V characteristics in N-LDMOS structure

Case Studies in Thermal Engineering
The thermal behavior analysis is undoubtedly the main concern when studying semiconductor devices' and structures' physical mechanics. To the best of our knowledge, simulations studies with an experimental validation of the temperature effect vs ...
Mohammed Almatrafi, Mohamed Ali Belaïd
doaj   +1 more source

Development and Evaluation of SiC LDMOS for High-Temperature Applications

IEEE Journal of the Electron Devices Society
This paper proposes and experimentally evaluates SiC laterally diffused metal-oxide-semiconductor (LDMOS) devices fabricated on two full 4H-SiC processes with P-type and N-type epitaxial layers.
Pengyu Lai, Hui Wang, H. Alan Mantooth, Zhong Chen   +3 more
doaj   +1 more source

The Simulation Study of the SOI Trench LDMOS With Lateral Super Junction

IEEE Journal of the Electron Devices Society, 2018
A novel lateral double diffused metal oxide semiconductor (LDMOS) with trench oxide layer, featuring a lateral super junction structure based on the silicon-on-insulator technology is proposed.
Weizhong Chen, Lijun He, Zhengsheng Han, Yi Huang   +3 more
doaj   +1 more source

4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance. [PDF]

Micromachines (Basel), 2023
Liu Y, Jia D, Fang J.
europepmc   +1 more source

Gate Engineering in SOI LDMOS for Device Reliability

MATEC Web of Conferences, 2016
A linearly graded doping drift region with step gate structure, used for improvement of reduced surface field (RESURF) SOI LDMOS transistor performance has been simulated with 0.35µm technology in this paper.
Aanand, Sheu Gene, Imam Syed Sarwar, Lu Shao Wei, Aryadeep Chirag, Yang Shao Ming   +5 more
doaj   +1 more source

Generalised Berglund relation in LDMOS transistors

Electronics Letters, 2011
Berglund related a certain area associated with the normalised MOS C(V) curve to the energy gap of silicon. Despite the fact that in LDMOS transistors the gate capacitance exhibits complicated behaviour associated with the presence of the drift region, it turns out that the Berglund relation remains valid, as confirmed by both measurements and ...
W. Yao, G. Gildenblat, C.C. McAndrew, A. Cassagnes   +3 more
openaire   +1 more source

Substrate Current Enhances HCI Lifetime in STI-Based LDMOS

IEEE Journal of the Electron Devices Society
There is an increasing demand for LDMOS with low RON, high IDSAT, and longer HCI lifetime offered by standard CMOS technology. We achieved these demands without introducing additional processes or altering the LDMOS design. Increasing the dose and energy
Yoo Seon Song, Maik Liebau, Jun Wu, Keith Flynn, Armin Muehlhoff, Ruchil Jain, Siddabathula Mahesh, Tom Herrmann, Alban Zaka, Markus Lenski, Jan Hoentschel   +10 more
doaj   +1 more source

Temperature-Characteristic Survey of a 1000-W LDMOS Power Amplifier

IEEE Access
To investigate the temperature characteristics of a laterally double-diffused metal oxide semiconductor (LDMOS) 1000 W shortwave solid-state power amplifier (PA), a comprehensive series of tests has been conducted.
Qian Lin, Da-An Zhao, Mei-Qian Wang, Fei You, Ji-Hua Wu, Ying-Chun Lv   +5 more
doaj   +1 more source