Results 91 to 100 of about 2,599 (207)

Development of ESD Robustness Enhancement of a Novel 800V LDMOS Multiple RESURF with Linear P-top Rings

, 2012
[[abstract]]"In this work, a novel 800V multiple RESURF LDMOS structures with or without P+ insertion region next to drain were developed to study the enhancement of ESD robustness.
蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming
core  

Study of LDMOS-SCR: A high voltage ESD protection device

, 2010
A novel LDMOS-SCR device for electrostatic discharge protection of power device is presented. The device is able to be fabricated in SOI 40V LDMOS process without any extra mask.
Zhang, Peng, Song Jia, Jia, Song, Zhang, Xing, Xing Zhang, Wang, Yuan, Yuan Wang, Peng Zhang   +7 more
core   +1 more source

Design and Modeling of High-Frequency LDMOS Transistors [Elektronisk resurs]

, 2002
The lateral double-diffused MOS (LDMOS) transistor has traditionally been a high-voltage device used in switching applications. The use as a high-frequency device has become more important lately since the LDMOS offers an low cost solution for ...
Litwin, Andrej,, Vestling, Lars,
core   +4 more sources

Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight

, 2010
Degradation induced by hot-carrier stress (HCS) in a Multi-STI-Finger (MF) LDMOS is analyzed through both electrical measurements and TCAD simulations. The critical HCS issues have been first addressed on a conventional STIbased LDMOS.
R. Wise, A. Gnudi, BACCARANI, GIORGIO, S. Poli, GNANI, ELENA, REGGIANI, SUSANNA, S. Reggiani, A. Loi, G. Baccarani, S. Pendharkar, E. Gnani, POLI, STEFANO, GNUDI, ANTONIO, M. Denison, S. Seetharaman   +14 more
core   +1 more source

Investigate Instability Behaviour In High Power LDMOS Power Amplifier [PDF]

, 2005
In this thesis the models of LDMOS power amplifier was been investigated using Advanced Design System (ADS) version 2004A software from Agilent Technologies for operation below 1 GHz frequency range.
Ab Rahman, Ida Idyuni
core   +1 more source

"Harmonic and intermodulation performance of LDMOS transistors" [PDF]

, 2003
An analysis of the intermodulation distortion(IMD) behavior of LDMOS transistor amplifiers is presented. It is shown that the turn-on region abruptness compared to most other devices is important for explaining measured IMD behavior such as sweet-spots ...
Abuelma’atti, M.T.
core  

Temperature-Characteristic Survey of a 1000-W LDMOS Power Amplifier

IEEE Access
To investigate the temperature characteristics of a laterally double-diffused metal oxide semiconductor (LDMOS) 1000 W shortwave solid-state power amplifier (PA), a comprehensive series of tests has been conducted.
Qian Lin, Da-An Zhao, Mei-Qian Wang, Fei You, Ji-Hua Wu, Ying-Chun Lv   +5 more
doaj   +1 more source

Compact modelling of high-voltage LDMOS devices

, 2005
In this paper various modelling approaches for Laterally Double-Di used MOS (LDMOS) devices are discussed. Characterisation results for the new compact LDMOS model called MOS Model 20 are presented.
Langevelde, van, R., Willemsen, M., Klaassen, D.B.M., Aarts, A.C.T., Scholten, A.J., Hout, van der, R.   +5 more
core  

Analysis of Self-heating Effect in a SOI LDMOS Device under an ESD Stress

, 2016
The analysis of self-heating effect in a SOI LDMOS device under an ESD stress is presented in this paper. TCAD tools are used as the platform to explore the physical process of the bulk LDMOS device and the influence of buried oxide layer inserted in the
Jian Cao, null Tianxing Li, null Lizhong Zhang, null Yuan Wang, Yuan Wang, Lizhong Zhang, null Jian Cao, Tianxing Li   +7 more
core   +1 more source

1.2 Features and benefits

, 2012
30 W LDMOS power transistor for S-band radar applications in the frequency range ...
S-band Ldmos Transistor, Product Profile
core