Results 101 to 110 of about 2,599 (207)

High Voltage (>800V) Power Device Study Based on Very Thin(0.15um) SOI LDMOS Technology

, 2009
[[abstract]]In recent years, because new display and communication products bring forth and substitutes the old ones, the demand for the power devices increases by a wide magnitude due to the rapid development of semiconductor industry.
Liu Yen-Ling
core  

Rc-Embedded Ldmos-Scr With High Holding Current For High-Voltage I/O Esd Protection

, 2015
A novel lateral diffusion MOS-embedded silicon-controlled rectifier with a high holding current (LDMOS-SCR-HHC) is proposed and verified in a 0.25-μ m 18-V Bipolar-CMOS-DMOS process. By adding an imbedded P+ region located next to the source region of an
Gu, Xiaofeng, Liang, Hailian, Liou, Juin J., Dong, Shurong   +3 more
core   +1 more source

A Brushless DC Motor Driver Chip With Adaptive Synchronous Rectification

IET Power Electronics
Brushless DC (BLDC) motor driver chips are widely used in household appliances, robots, automobiles, etc. The three‐phase bridge driver is a common driving structure for BLDC motors.
Yifeng Peng, Jianxiong Xi, Ao Li, Lenian He, Anming Gao, Wei Jiang   +5 more
doaj   +1 more source

An RF-Ultrasound Relay for Adaptive Wireless Powering Across Tissue Interfaces. [PDF]

IEEE J Solid-State Circuits, 2022
So E, Yeon P, Chichilnisky EJ, Arbabian A.   +3 more
europepmc   +1 more source

Modeling of Key Specifications for RF Amplifiers Using the Extreme Learning Machine. [PDF]

Micromachines (Basel), 2022
Zhou S, Yang C, Wang J.
europepmc   +1 more source

C-Band 30 W High PAE Power Amplifier MMIC with Second Harmonic Suppression for Radar Network Application. [PDF]

Micromachines (Basel), 2022
Yang F, Song L, Xu Y.
europepmc   +1 more source

Test Structure Design for Defect Detection during Active Thermal Cycling. [PDF]

Sensors (Basel), 2022
Florea C, Simon D, Bojiță A, Purcar M, Boianceanu C, Țopa V.   +5 more
europepmc   +1 more source

A Doherty Power Amplifier for Ultrasound Instrumentation. [PDF]

Sensors (Basel), 2023
Choi H.
europepmc   +1 more source

Energy Capability of LDMOS as a Function of Ambient Temperature

, 2012
[[abstract]]Energy capability of a LDMOS device structure is shown to have nonlinear relationship with ambient temperature. Analytical model for energy capability has been discussed and is in good agreement with the simulation results.
許健;Sheu, Gene
core