Results 121 to 130 of about 236 (173)

A high-efficiency transformer-in-package isolated DC-DC converter using glass-based fan-out wafer-level packaging. [PDF]

Fundam Res
Cheng L, Chen Z, Yu D, Pan D.
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A Wireless, Multicolor Fluorescence Image Sensor Implant for Real-Time Monitoring in Cancer Therapy. [PDF]

IEEE J Solid-State Circuits
Roschelle M, Rabbani R, Gweon S, Kumar R, Vercruysse A, Cho NW, Spitzer MH, Niknejad AM, Stojanović VM, Anwar M.   +9 more
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SCR-LDMOS. A novel LDMOS device with ESD robustness

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), 2002
A novel lateral power device structure with a very high degree of ESD (electrostatic discharge) robustness is presented. This device called the SCR-LDMOS is a modification of the lateral LDMOSFET with good on state and blocking characteristics.
S. Pendharkar, R. Teggatz, J. Devore, J. Carpenter, T. Efland, C.-Y. Tsai   +5 more
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An Oscillator Based on LDMOS Capacitor

2009 Sixth International Conference on Information Technology: New Generations, 2009
The characteristic curve of the ordinary MOS capacitor is not monotonic, whereas the Laterally Diffused MOS (LDMOS) capacitor has a nearly ideal monotonic property. An oscillator based on LDMOS capacitor is designed and implemented using the standard 0.5µm CMOS technology, and various essential factors have been considered, such as the layout size, the
Wei-hai Huang, Yu-jie Dai, Xiao-xing Zhang, Ying-jie Lu   +3 more
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Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices

Microelectronics Reliability, 2016
Abstract This paper presents a comparative study on the electrostatic discharge (ESD) characteristics of Lateral Diffused Metal-Oxide-Semiconductor (LDMOS) and LDMOS with embedded silicon controlled rectifier (LDMOS-SCR) by using transmission line pulsing (TLP) measurements. Results show that the safe operating area (SOA) of LDMOS shrank pronouncedly
Zhihui Yu, Hao Jin, Shurong Dong, Hei Wong, Jie Zeng, Weihuai Wang   +5 more
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A novel double RESURF LDMOS for HVIC's

Microelectronics Journal, 2004
Abstract The viability of a fully implanted double RESURF technology using a linearly varying doping of p-layer at the surface [Electron. Lett. 32 (12) (1996) 1092–1093] is demonstrated for the first time. Incorporating such a layer allows the drift region charge to be doubled without degradation of breakdown voltage.
S. Hardikar, Merlyne M. De Souza, Y. Z. Xu, T. J. Pease, E. M. Sankara Narayanan   +4 more
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TCAD degradation modeling for LDMOS transistors

2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2012
Physically-based models of hot-carrier stress and dielectric field-enhanced thermal damage have been incorporated in the framework of a TCAD tool with the aim of investigating the electrical stress degradation in integrated power devices over an extended range of stress biases and ambient temperatures.
REGGIANI, SUSANNA, BARONE, GAETANO, GNANI, ELENA, GNUDI, ANTONIO, S. Poli, M. Y. Chuang, W. Tian, R. Wise   +7 more
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A compact model for the current in LDMOS transistors

2017 IEEE International Conference on Electro Information Technology (EIT), 2017
In this paper, a closed-form physics-based surface potential approach is proposed to derive a compact model for current in high-frequency and high-power LDMOS transistors. For this purpose, we have modeled the drift region with three variable resistors.
Hojjat Keshtkar, Erfan Javadiun, Hassan Mansourghanaei   +2 more
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SLOP-LDMOS - A novel super-junction concept LDMOS and its experimental demonstration

Proceedings. 2005 International Conference on Communications, Circuits and Systems, 2005., 2005
In this paper, a novel surface low on-resistance path lateral double-diffusion MOSFET (SLOP-LDMOS), based on the super junction (SJ) concept, is presented and experimentally demonstrated for the first time. The key feature of this new structure is that the super junction primarily provides the low on-resistance path and it is just located at the ...
null Bo Zhang, null Lin Chen, null Jiie Wu, null Zhaoji Li   +3 more
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The thermal effects in LDMOS transistor

14th International Conference on Microwaves, Radar and Wireless Communications. MIKON - 2002. Conference Proceedings (IEEE Cat.No.02EX562), 2003
This paper describes development of thermal LDMOS model based on the solution of heat conducting equation (HCE) by means of 3D FDTD thermal method. This thermal analysis co-operates with electrical LDMOS model implemented in Agilent's program (ADS). The elaborated temperature-dependent microwave LDMOS model will be used to design high power amplifiers ...
R. Michnowski, W. Wojtasiak
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