Results 131 to 140 of about 236 (173)
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LDMOS–SCR: a replacement for LDMOS with high ESD self-protection ability for HV application
Semiconductor Science and Technology, 2012A study of LDMOS–SCR devices for SOI BCD technology is presented. The LDMOS–SCR is fully compatible with BCD process and can replace the LDMOS as a high voltage output driver. By comparison of the LDMOS and another 'pnpn' type of LDMOS–SCR, the triggering mechanism and ESD behavior are well discussed with both device simulation and TLP measurement.
Peng Zhang +3 more
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Physica Scripta, 2002
A new vertical channel LDMOS, which decreases the on-resistance without sacrificing the breakdown voltage, is proposed and verified by numerical simulation. In the proposed vertical channel LDMOS, the channel and the drift region are located in the trench between the source and the drain. The total cell pitch of the proposed device is decreased to 4 μm
Seung-Chul Lee +3 more
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A new vertical channel LDMOS, which decreases the on-resistance without sacrificing the breakdown voltage, is proposed and verified by numerical simulation. In the proposed vertical channel LDMOS, the channel and the drift region are located in the trench between the source and the drain. The total cell pitch of the proposed device is decreased to 4 μm
Seung-Chul Lee +3 more
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A Rugged LDMOS for LBC5 Technology
Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005., 2005This paper presents a new method of enhancing the SOA of n-channel Ldmos transistors. Attention is focused on those applications where “Electrical SOA” is important and where the power pulse time is typically a few µs or less. Typical applications include gate drives, H-bridge commutation, and self-protection against ESD pulses.
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Breakdown voltage and on-resistance of multi-RESURF LDMOS
Microelectronics Journal, 2003The breakdown voltage and on-resistance of a multi-RESURF LDMOS are studied numerically and analytically. The results are compared with those from the conventional LDMOS. Reduction of on-resistance by 23% is obtained for the multi-layer structure without degradation in the breakdown voltage.
E. K. Choi, Y. I. Choi, S. K. Chung
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Characterization and Modeling of High-Voltage LDMOS Transistors
2014This chapter introduces integrated power devices and their reliability issues. The lateral double-diffused MOS (LDMOS) transistors are widely used in mixed-signal circuit design as integrated high-voltage switches and drivers. The LDMOS with shallow-trench isolation (STI) is the device of choice to achieve voltage and current capability integrated in ...
REGGIANI, SUSANNA +10 more
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A compact large signal model of LDMOS
Solid-State Electronics, 2002Abstract Lateral double-diffused MOSFETs (LDMOS) are becoming more popular in RF power amplifiers for wireless communication applications. The understanding of non-linearity in LDMOS is critical in order to design ultra-linear power amplifiers to meet the stringent needs of current wireless systems. We have developed a compact large signal model that
C.W Tang, K.Y Tong
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Modeling Kirk effect of RESURF LDMOS
Solid-State Electronics, 2005Two-dimensional surface electric field in the drift region of RESURF LDMOS is modeled in the off-state and on-state. Numerical results are shown to support the analytical results. Based on these results, 3-D Kirk effect is modeled. The reason inducing high electric field near the drain is demonstrated and methods to lower the high electric field are ...
Zhilin Sun, Weifeng Sun, Longxing Shi
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A low on-resistance buried current path SOI p-channel LDMOS compatible with n-channel LDMOS
Chinese Physics B, 2013A novel low specific on-resistance (Ron,sp) silicon-on-insulator (SOI) p-channel lateral double-diffused metal—oxide semiconductor (pLDMOS) compatible with high voltage (HV) n-channel LDMOS (nLDMOS) is proposed. The pLDMOS is built in the N-type SOI layer with a buried P-type layer acting as a current conduction path in the on-state (BP SOI pLDMOS ...
Kun Zhou +5 more
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LDMOS: НОВЫЕ РАЗРАБОТКИ АО «НИИЭТ»
ELECTRONICS: SCIENCE, TECHNOLOGY, BUSINESS, 2023Приводятся сведения об усовершенствованиях технологии LDMOS в АО «НИИЭТ», а также о разрабатываемых предприятием СВЧ-транзисторах, основанных на данной технологии и предназначенных для применения в телевизионной аппаратуре стандартов DVB-T / DVB-T2.
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A RF power LDMOS device on SOI
1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345), 2003We have fabricated a partially-depleted SOI laterally diffused MOSFET (LDMOSFET) that is designed for use in radio frequency (RF) power amplifiers (PA) for portable applications. The device is fabricated on thin film SIMOX wafers and is suitable for integration with SOI CMOS.
J.G. Fiorenza +2 more
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