Results 151 to 160 of about 236 (173)

A new technique in LDMOS transistors to improve the breakdown voltage and the lattice temperature

Materials Science in Semiconductor Processing, 2015
Mahsa Mehrad, Ali A Orouji
exaly  

Novel LDMOS Optimizing Lateral and Vertical Electric Field to Improve Breakdown Voltage by Multi-Ring Technology

IEEE Electron Device Letters, 2018
Ziming Dong, Baoxing Duan, Haijun Guo
exaly  

Compact modeling of LDMOS working in the third quadrant

Proceedings of the IEEE 2014 Custom Integrated Circuits Conference, 2014
Kejun Xia, Harihara Indana, Usha Gogineni   +2 more
openaire   +1 more source

A 700- V Junction-Isolated Triple RESURF LDMOS With N-Type Top Layer

IEEE Electron Device Letters, 2014
Ming Qiao, Bo Zhang
exaly  

New Superjunction LDMOS Breaking Silicon Limit by Electric Field Modulation of Buffered Step Doping

IEEE Electron Device Letters, 2015
Baoxing Duan, Zhen Cao, Song Yuan
exaly  

New Superjunction LDMOS With the Complete Charge Compensation by the Electric Field Modulation

IEEE Electron Device Letters, 2014
Baoxing Duan, Song Yuan, Zhen Cao
exaly  

The Impact of Pid on The Degradation of LDMOS

2025 Conference of Science and Technology of Integrated Circuits (CSTIC)
Wen Ying, Canny Chen
openaire   +1 more source

Breakdown voltage improvement of LDMOSs by charge balancing: An inserted P-layer in trench oxide (IPT-LDMOS)

Superlattices and Microstructures, 2012
Ali A Orouji, Mahsa Mehrad
exaly  

Omega shape channel LDMOS: A novel structure for high voltage applications

Physica E: Low-Dimensional Systems and Nanostructures, 2016
Mahsa Mehrad
exaly  

A novel high breakdown voltage LDMOS by protruded silicon dioxide at the drift region

Journal of Computational Electronics, 2016
Meysam Zareiee, Ali A Orouji, Mahsa Mehrad   +2 more
exaly