Results 161 to 170 of about 236 (173)
Some of the next articles are maybe not open access.
New Super-Junction LDMOS Breaking Silicon Limit by Multi-Ring Assisted Depletion Substrate
IEEE Transactions on Electron Devices, 2019Baoxing Duan, Mingzhe Li, Ziming Dong
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A 300-V Ultra-Low-Specific On-Resistance High-Side p-LDMOS With Auto-Biased n-LDMOS for SPIC
IEEE Transactions on Power Electronics, 2017Bo Yi, Xingbi Chen
exaly
Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model
IEEE Transactions on Microwave Theory and Techniques, 2002Christian Fager +2 more
exaly
Compact modeling of high-voltage LDMOS devices including quasi-saturation
IEEE Transactions on Electron Devices, 2006W J Kloosterman
exaly
High performance DCTG-LDMOS on InGaAs for RF power amplifier applications
Materials Science in Semiconductor Processing, 2015Manoj Singh Adhikari
exaly
A novel LDMOS structure using P-trench for high performance applications
Materials Science in Semiconductor Processing, 2015Ali A Orouji, Abbas Dideban
exaly
A Triple RESURF Si/SiC HeteroJunction LDMOS and Its Analytical Model
International Journal of Numerical Modelling: Electronic Networks, Devices and FieldsXiarong Hu, Yonggen Xu
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