Results 171 to 180 of about 2,599 (207)
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A new technique in LDMOS transistors to improve the breakdown voltage and the lattice temperature
Materials Science in Semiconductor Processing, 2015Ali Asghar Orouji
exaly
New Super-Junction LDMOS Breaking Silicon Limit by Multi-Ring Assisted Depletion Substrate
IEEE Transactions on Electron Devices, 2019MingZhe Li, Yin Tang Yang, Baoxing Duan
exaly
New Superjunction LDMOS With the Complete Charge Compensation by the Electric Field Modulation
IEEE Electron Device Letters, 2014Zhen Cao, Baoxing Duan, Song Yuan
exaly
A novel high breakdown voltage LDMOS by protruded silicon dioxide at the drift region
Journal of Computational Electronics, 2016Mahsa Mehrad +2 more
exaly
Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model
IEEE Transactions on Microwave Theory and Techniques, 2002Christian Fager, J C Pedro
exaly
A novel LDMOS structure using P-trench for high performance applications
Materials Science in Semiconductor Processing, 2015Abbas Dideban, Ali Asghar Orouji
exaly