Results 141 to 150 of about 2,599 (207)

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics. [PDF]

Nanomaterials (Basel)
Hasan MM, Wang C, Pala N, Shur M.
europepmc   +1 more source

Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices. [PDF]

Micromachines (Basel), 2018
Huang H, Li F, Sun Z, Cao Y.
europepmc   +1 more source

Hybrid Piezo-Electromagnetic Device Designed to Harvest the Vibrations of the Human Body. [PDF]

Micromachines (Basel)
Zărnescu GC, Pîslaru-Dănescu L, Stamatin I.   +2 more
europepmc   +1 more source

A high-efficiency transformer-in-package isolated DC-DC converter using glass-based fan-out wafer-level packaging. [PDF]

Fundam Res
Cheng L, Chen Z, Yu D, Pan D.
europepmc   +1 more source

A Wireless, Multicolor Fluorescence Image Sensor Implant for Real-Time Monitoring in Cancer Therapy. [PDF]

IEEE J Solid-State Circuits
Roschelle M, Rabbani R, Gweon S, Kumar R, Vercruysse A, Cho NW, Spitzer MH, Niknejad AM, Stojanović VM, Anwar M.   +9 more
europepmc   +1 more source

Some of the next articles are maybe not open access.

Related searches:

SCR-LDMOS. A novel LDMOS device with ESD robustness

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), 2002
A novel lateral power device structure with a very high degree of ESD (electrostatic discharge) robustness is presented. This device called the SCR-LDMOS is a modification of the lateral LDMOSFET with good on state and blocking characteristics.
S. Pendharkar, R. Teggatz, J. Devore, J. Carpenter, T. Efland, C.-Y. Tsai   +5 more
openaire   +1 more source

An Oscillator Based on LDMOS Capacitor

2009 Sixth International Conference on Information Technology: New Generations, 2009
The characteristic curve of the ordinary MOS capacitor is not monotonic, whereas the Laterally Diffused MOS (LDMOS) capacitor has a nearly ideal monotonic property. An oscillator based on LDMOS capacitor is designed and implemented using the standard 0.5µm CMOS technology, and various essential factors have been considered, such as the layout size, the
Wei-hai Huang, Yu-jie Dai, Xiao-xing Zhang, Ying-jie Lu   +3 more
openaire   +1 more source

Compact modeling of high-voltage LDMOS devices including quasi-saturation [PDF]

IEEE Transactions on Electron Devices, 2006
—The surface-potential-based compact transistor model, MOS Model 20 (MM20), has been extended with a quasi-saturation, an effect that is typical for LDMOS devices with a long drift region.
W J Kloosterman
exaly   +2 more sources

Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices

Microelectronics Reliability, 2016
Abstract This paper presents a comparative study on the electrostatic discharge (ESD) characteristics of Lateral Diffused Metal-Oxide-Semiconductor (LDMOS) and LDMOS with embedded silicon controlled rectifier (LDMOS-SCR) by using transmission line pulsing (TLP) measurements. Results show that the safe operating area (SOA) of LDMOS shrank pronouncedly
Zhihui Yu, Hao Jin, Shurong Dong, Hei Wong, Jie Zeng, Weihuai Wang   +5 more
openaire   +2 more sources

A novel double RESURF LDMOS for HVIC's

Microelectronics Journal, 2004
Abstract The viability of a fully implanted double RESURF technology using a linearly varying doping of p-layer at the surface [Electron. Lett. 32 (12) (1996) 1092–1093] is demonstrated for the first time. Incorporating such a layer allows the drift region charge to be doubled without degradation of breakdown voltage.
S. Hardikar, Merlyne M. De Souza, Y. Z. Xu, T. J. Pease, E. M. Sankara Narayanan   +4 more
openaire   +2 more sources