Results 51 to 60 of about 3,588 (218)

Distortion correction of LDMOS power amplifiers using hybrid RF second harmonic injection/digital predistortion linearization [PDF]

, 2006
An LDMOS RF power amplifier for RF multichannel wireless systems with improved IMD performance characteristics is presented. The application of two combined linearization methods is being tested with the help of circuit simulation software ADS.
Budimir, D., Budimir, D., Koulouzis, H., Koulouzis, H.   +3 more
core   +1 more source

A Zero-Cost Technique to Improve ON-State Performance and Reliability of Power LDMOS Transistors

IEEE Journal of the Electron Devices Society, 2021
In this paper, we have proposed a simple and zero-cost technique to improve ON-state and reliability performance of LDMOS transistors. We introduced doping gradient in the channel by optimizing position of the P-Well mask during test structure design ...
Kumari Neeraj Kaushal, Nihar R. Mohapatra   +1 more
doaj   +1 more source

Optimization of Integrated Transistors for Very High Frequency DC-DC Converters [PDF]

, 2012
This paper presents a method to optimize integrated lateral double-diffused MOSFET transistors for use in very high frequency (VHF, 30-300 MHz) dc-dc converters. A transistor model valid at VHF switching frequencies is developed.
Anderson, David I., Perreault, David J., Sagneri, Anthony D.   +2 more
core   +1 more source

Fully tensile strained partial silicon-on-insulator n-type lateral-double-diffused metal-oxide-semiconductor field effect transistor using localized contact etching stop layers

AIP Advances, 2017
The use of contact etching stop layer (CESL) stressors is a popular technique for introducing stress into a transistor channel. However, when tensile stress is applied to an n-type lateral double-diffused metal-oxide-semiconductor ...
Xiangzhan Wang, Changgui Tan, Xi Zou, Yi Zhang, Jianhua Pan, Yang Liu   +5 more
doaj   +1 more source

The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs [PDF]

, 2010
The impact of hot-carrier injection (HCI) due to repetitive unclamped inductive switching (UIS) on the electrical performance of low-voltage trench power n-type MOSFETs (nMOSFETs) is assessed.
Alatise, Olayiwola M., Heppenstall, Keith, Kennedy, Ian, Khan, Khalid Saeed, Koh, Adrian, Parkin, Jim, Petkos, George, Rutter, Philip   +7 more
core   +1 more source

Algorithmic Optimization of Transistors Applied to Silicon LDMOS

IEEE Access, 2023
We propose a pioneering approach that integrates optimization algorithms and technology computer-aided design to automatically optimize laterally-diffused metal-oxide-semiconductors (LDMOS) with a field-oxide structure.
Ping-Ju Chuang, Ali Saadat, Maarten L. Van De Put, Hal Edwards, William G. Vandenberghe   +4 more
doaj   +1 more source

Improved Reactance-Compensation Technique for the Design of Wideband Suboptimum Class-E Power Amplifiers [PDF]

, 2015
A reactance-compensation technique has been introduced recently for the design of wideband class-E power amplifiers (PAs). With this technique, the load resistance can be transformed to an optimal complex drain impedance in a broad frequency band.
Morris, Kevin, Watkins, Gavin, Yamaguchi, Keiichi, Zhou, Jiafeng   +3 more
core   +2 more sources

Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi‐Saturation Effect

Active and Passive Electronic Components, Volume 2019, Issue 1, 2019., 2019
This paper discusses linearity and robustness together for the first time, disclosing a way to improve them. It reveals that the nonlinear transconductance with device working at quasi‐saturation region is significant factor of device linearity. The peak electric field is the root cause of electron velocity saturation.
Haifeng Mo, Yaohui Zhang, Helun Song, Gerard Ghibaudo   +3 more
wiley   +1 more source

Neurospace Mapping Modeling for Packaged Transistors

Mathematical Problems in Engineering, Volume 2018, Issue 1, 2018., 2018
This paper presents a novel Neurospace Mapping (Neuro‐SM) method for packaged transistor modeling. A new structure consisting of the input package module, the nonlinear module, the output package module, and the S‐Matrix calculation module is proposed for the first time. The proposed method can develop the model only using the terminal signals, instead
Shuxia Yan, Xiaoyi Jin, Yaoqian Zhang, Weiguang Shi, Jia Wen, Akhil Garg   +5 more
wiley   +1 more source

A Novel p-LDMOS Additionally Conducting Electrons by Control ICs

IEEE Journal of the Electron Devices Society, 2019
A silicon-on-insulator (SOI) p-channel lateral double-diffused MOSFET (p-LDMOS), conducting not only holes but also electrons, is proposed and investigated by TCAD simulations. Its most important advantage is the greatly improved relationship between the
Songnan Guo, Xing Bi Chen
doaj   +1 more source