Evolution of Black‐Box Models Based on Volterra Series
Journal of Applied Mathematics, Volume 2015, Issue 1, 2015., 2015 This paper presents a historical review of the many behavioral models actually used to model radio frequency power amplifiers and a new classification of these behavioral models. It also discusses the evolution of these models, from a single polynomial to multirate Volterra models, presenting equations and estimation methods.
Daniel D. Silveira +3 more
wiley +1 more source
High-voltage (100 V) ChipfilmTM single-crystal silicon LDMOS transistor for integrated driver circuits in flexible displays [PDF]
Advances in Radio Science, 2009 System-in-Foil (SiF) is an emerging field of large-area polymer electronics that employs new materials such as conductive polymers and electrophoretic micro-capsules (E-Ink) along with ultra-thin and thus flexible chips.
J. N. Burghartz, H. Richter, A. Asif
doaj
Unified Analytical Model for SOI LDMOS With Electric Field Modulation
IEEE Journal of the Electron Devices Society, 2020 The unified analytical model is proposed for SOI LDMOS (Silicon On Insulator Lateral Double-diffused Metal Oxide Semiconductor) based on the electric field modulation in this paper for the first time.
Baoxing Duan +3 more
doaj +1 more source
MOOSE: A Physically Based Compact DC Model of SOI LDMOSFETs for Analogue Circuit Simulation
, 2004 In this paper, we present a compact model for silicon-on-insulator (SOI) laterally double diffused (LD) MOSFETs. The model is complete insofar as it uses no subcircuits, and is intended to predict device operation in all regions of bias.
Swanenberg, M. +4 more
core +1 more source
Distortion correction of LDMOS power amplifiers using hybrid RF second harmonic injection/digital predistortion linearization [PDF]
, 2006 An LDMOS RF power amplifier for RF multichannel wireless systems with improved IMD performance characteristics is presented. The application of two combined linearization methods is being tested with the help of circuit simulation software ADS.
Budimir, D., Koulouzis, H.
core +1 more source
120V Low Side LDMOS Device with Sided Isolation of 0.35μm CMOS Compatible Process
MATEC Web of Conferences, 2018 In this paper, a novel 120V multiple RESURF lateral double-diffused MOS (LDMOS) transistor with shallow trench isolation (STI) structure in low side is developed and successfully simulated.
Deivasigamani Ravi +5 more
doaj +1 more source
Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars
Results in Physics, 2020 To reduce specific on-resistance (Ron,sp) of power devices, a novel SOI (silicon-on-insulator) trench gate LDMOS with heavily doping L-shaped P/N pillars and vertical dual-trench-gates is proposed in this paper, and its physical mechanism and electrical ...
Jingwei Guo +6 more
doaj +1 more source
3D RESURF Effect For LDMOS Devices
, 2009 [[abstract]]In recent years, the power devices become more and more important due to the big demands for liquid crystal display (LCD), electrical plasma display, LED, and communication products.
Chin-Che Lin
core +1 more source
On the modeling of LDMOS RF power transistors
IEEE Custom Integrated Circuits Conference 2010, 2010 In this review we present a technology-independent approach to the construction of a circuit model for a high-power radio-frequency (RF) LDMOS FET. We compare and contrast this approach with other MOSFET modeling approaches used for digital and RF CMOS applications.
John Wood, Peter H. Aaen
openaire +2 more sources
LDMOS RF power amplifiers with improved performance characteristics using defected ground structure
, 2006 An LDMOS RF power amplifier with improved performance characteristics such as intermodulation distortion (IMD) and power-added efficiency (PAE) using a defected ground structure (DGS) matching circuit and bias lines is presented.
Budimir, D., Koulouzis, H.
core +1 more source