Results 31 to 40 of about 2,599 (207)
IEEE Journal of the Electron Devices Society, 2022 An ultra-low specific on-resistance 4H-SiC power laterally diffused metal oxide semiconductor (LDMOS) device is proposed for 1200V-class applications.
Moufu Kong +5 more
doaj +1 more source
LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification
IEEE Journal of the Electron Devices Society, 2022 We analytically and numerically investigate the performance of Laterally-Diffused Metal-Oxide-Semiconductor (LDMOS) transistors with Semi-circular Field OXide (S-FOX) focusing on mid-voltage (30 V – 100 V) power applications.
Ali Saadat +3 more
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Hot-Carrier-Induced Reliability for Lateral DMOS Transistors With Split-STI Structures
IEEE Journal of the Electron Devices Society, 2021 In this work, four kinds of lateral double-diffused MOS (LDMOS) devices with different split shallow trench isolation (STI) structures (Device A: LDMOS with traditional split-STI, Device B: LDMOS with slope-STI, Device C with step-STI and Device D with H-
Li Lu +7 more
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A Zero-Cost Technique to Improve ON-State Performance and Reliability of Power LDMOS Transistors
IEEE Journal of the Electron Devices Society, 2021 In this paper, we have proposed a simple and zero-cost technique to improve ON-state and reliability performance of LDMOS transistors. We introduced doping gradient in the channel by optimizing position of the P-Well mask during test structure design ...
Kumari Neeraj Kaushal +1 more
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AIP Advances, 2017 The use of contact etching stop layer (CESL) stressors is a popular technique for introducing stress into a transistor channel. However, when tensile stress is applied to an n-type lateral double-diffused metal-oxide-semiconductor ...
Xiangzhan Wang +5 more
doaj +1 more source
The effect of baseband impedance termination on the linearity of GaN HEMTs [PDF]
, 2010 This paper demonstrates the significant effect of baseband impedance termination on the linearity performance of a 10W GaN HEMT device driven to deliver a peak envelope power of approximately 40dBm. The paper also proposes a further refinement to a state-
Woodington, S. +21 more
core +1 more source
Algorithmic Optimization of Transistors Applied to Silicon LDMOS
IEEE Access, 2023 We propose a pioneering approach that integrates optimization algorithms and technology computer-aided design to automatically optimize laterally-diffused metal-oxide-semiconductors (LDMOS) with a field-oxide structure.
Ping-Ju Chuang +4 more
doaj +1 more source
Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi‐Saturation Effect
Active and Passive Electronic Components, Volume 2019, Issue 1, 2019., 2019 This paper discusses linearity and robustness together for the first time, disclosing a way to improve them. It reveals that the nonlinear transconductance with device working at quasi‐saturation region is significant factor of device linearity. The peak electric field is the root cause of electron velocity saturation.
Haifeng Mo +3 more
wiley +1 more source
A Novel p-LDMOS Additionally Conducting Electrons by Control ICs
IEEE Journal of the Electron Devices Society, 2019 A silicon-on-insulator (SOI) p-channel lateral double-diffused MOSFET (p-LDMOS), conducting not only holes but also electrons, is proposed and investigated by TCAD simulations. Its most important advantage is the greatly improved relationship between the
Songnan Guo, Xing Bi Chen
doaj +1 more source
Neurospace Mapping Modeling for Packaged Transistors
Mathematical Problems in Engineering, Volume 2018, Issue 1, 2018., 2018 This paper presents a novel Neurospace Mapping (Neuro‐SM) method for packaged transistor modeling. A new structure consisting of the input package module, the nonlinear module, the output package module, and the S‐Matrix calculation module is proposed for the first time. The proposed method can develop the model only using the terminal signals, instead
Shuxia Yan +5 more
wiley +1 more source