Results 31 to 40 of about 236 (173)
IET Circuits, Devices &Systems, Volume 2023, Issue 1, 2023., 2023 In this work, the effects of the mini‐local oxidation of silicon (LOCOS) field plate’s bottom physical profile on the devices’ breakdown performance are analyzed through technology computer‐aided design simulations. It is indicated that the “abrupt” bottom profile could certainly do with an optimization.
Shaoxin Yu +6 more
wiley +1 more source
1.2 kV 4H‐SiC planar power MOSFETs with a low‐K dielectric in central gate
IET Circuits, Devices &Systems, Volume 16, Issue 5, Page 419-426, August 2022., 2022 Abstract A 1.2 kV 4H‐SiC planar power MOSFET with a low‐K dielectric in central gate (LK‐MOS) is proposed in this paper. The LK‐MOS features a P+ shielding region and a thick low‐K dielectric layer under the central gate. The insulation layer capacitance is reduced by the thick low‐K dielectric, while the depletion layer capacitance is decreased due to
Dong Liu +6 more
wiley +1 more source
Research on Silicon‐Based Terahertz Communication Integrated Circuits
Chinese Journal of Electronics, Volume 31, Issue 3, Page 516-533, May 2022., 2022 With the increasing number of users and emerging new applications, the demand for mobile data traffic is growing rapidly. The limited spectrum resources of the traditional microwave and millimeter‐wave frequency bands can no longer support the future wireless communication systems with higher system capacity and data throughput.
Peigen ZHOU +10 more
wiley +1 more source
Performance analysis of a novel trench SOI LDMOS with centrosymmetric double vertical field plates
Results in Physics, 2019 A novel trench SOI LDMOS with centrosymmetric double vertical field plates structure (CDVFPT SOI LDMOS) is proposed in this paper. The 2-D device simulator MEDICI is used to investigate the characteristics of the proposed structure.
Jianmei Lei +8 more
doaj +1 more source
Results in Physics, 2020 A novel SiC/Si heterojunction lateral double-diffused metal-oxidesemiconductor (LDMOS) with a reversed L-shaped field plate and a stepped oxide layer has been proposed to improve the tradeoff between the breakdown voltage (BV) and specific on-resistance (
Qi Li +8 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2021 The ultra-high voltage (UHV) Lateral-diffused MOSFET (LDMOS) transistor has been widely used in power circuit applications and also used as an electrostatic discharge (ESD) self-protection device.
Po-Lin Lin, Shen-Li Chen, Sheng-Kai Fan
doaj +1 more source
New Super-Junction LDMOS Based on Poly-Si Thin-Film Transistors
IEEE Journal of the Electron Devices Society, 2016 A multi-channel super-junction lateral doubled-diffused MOSFET (SJ-LDMOS) that is developed from thin film transistor technology is proposed. To optimize the breakdown voltage (VBD) and to reduce the specific on-resistance (RSP), a new structure called ...
Jhen-Yu Tsai, Hsin-Hui Hu
doaj +1 more source
Superjunction LDMOS With Dual Gate for Low On-Resistance and High Transconductance
IEEE Journal of the Electron Devices Society, 2020 In this paper, a novel bulk silicon lateral superjunction double diffused MOSFET (SJ-LDMOS) with dual gate (DG) is proposed and its mechanism is investigated by numerical TCAD simulations.
Zhen Cao, Licheng Jiao
doaj +1 more source
Numerical Analysis of the LDMOS With Side Triangular Field Plate
IEEE Journal of the Electron Devices Society, 2019 A Lateral Double-diffused Metal Oxide Semiconductor (LDMOS) with side triangular field plate (STFP) is proposed for improving the breakdown voltage (BV) and reducing the specific on-resistance (Ron,sp). The main feature of the novel LDMOS is the STFPs at
Jiafei Yao +5 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2022 An ultra-low specific on-resistance 4H-SiC power laterally diffused metal oxide semiconductor (LDMOS) device is proposed for 1200V-class applications.
Moufu Kong +5 more
doaj +1 more source