Results 21 to 30 of about 5,924,760 (360)

Adherence as a predictor of the development of class-specific resistance mutations: the Swiss HIV Cohort Study [PDF]

, 2013
BACKGROUND: Non-adherence is one of the strongest predictors of therapeutic failure in HIV-positive patients. Virologic failure with subsequent emergence of resistance reduces future treatment options and long-term clinical success. METHODS: Prospective
Jürg Böni (36157), Yerly, Sabine, von Wyl Viktor, Alexandra Calmy (36005), Dunja Nicca (336117), Glass, Tracy R, Swiss HIV Cohort Study,, Hansjakob Furrer (93994), Günthard Huldrych F., Vincent Aubert (297526), Jürg Böni, Aubert Vincent, Calmy, Alexandra, Bucher, Heiner C, Huldrych F. Günthard (173082), Böni, J., Cavassini Matthias, Viktor von Wyl, Swiss HIV Cohort Study, Günthard, Huldrych F., Enos Bernasconi (174329), Furrer, Hansjakob, Heiner C Bucher, Klimkait, Thomas, Hansjakob Furrer, Alexandra Calmy, Calmy Alexandra, Aubert, Vincent, Glass, T.R., Sabine Yerly (82534), Dunja Nicca, Yerly, S., Bucher, Heiner C., Tracy R. Glass (134725), Yerly Ferrillo, Sabine, Bucher Heiner C., Tracy R Glass, Nicca, D., Bernasconi, E., Wainberg, Mark, Thomas Klimkait (178911), Calmy, A., Günthard, Huldrych F, Enos Bernasconi, Heiner C. Bucher (134728), Cavassini, M., Matthias Cavassini (146654), Aubert, V., Glass, Tracy R., Böni, Jürg, Klimkait Thomas, Thomas Klimkait, Glass Tracy R., Bernasconi, Enos, Nicca Dunja, von Wyl, Viktor, Nicca, Dunja, von Wyl, V., Furrer Hansjakob, Bernasconi Enos, Sabine Yerly, Furrer, H., Viktor von Wyl (146506), Günthard, H.F., Böni Jürg, Klimkait, T., Yerly Sabine, Vincent Aubert, Bucher, H.C., Huldrych F Günthard, Cavassini, Matthias, Matthias Cavassini   +71 more
core   +1 more source

A Zero-Cost Technique to Improve ON-State Performance and Reliability of Power LDMOS Transistors

IEEE Journal of the Electron Devices Society, 2021
In this paper, we have proposed a simple and zero-cost technique to improve ON-state and reliability performance of LDMOS transistors. We introduced doping gradient in the channel by optimizing position of the P-Well mask during test structure design ...
Kumari Neeraj Kaushal, Nihar R. Mohapatra   +1 more
doaj   +1 more source

150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers

Micromachines, 2020
A rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide- semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied.
Feng-Tso Chien, Zhi-Zhe Wang, Cheng-Li Lin, Tsung-Kuei Kang, Chii-Wen Chen, Hsien-Chin Chiu   +5 more
doaj   +1 more source

Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars

Results in Physics, 2020
To reduce specific on-resistance (Ron,sp) of power devices, a novel SOI (silicon-on-insulator) trench gate LDMOS with heavily doping L-shaped P/N pillars and vertical dual-trench-gates is proposed in this paper, and its physical mechanism and electrical ...
Jingwei Guo, Shengdong Hu, Jian'an Wang, Gang Guo, Chang Liu, Han Yang, Shenglong Ran   +6 more
doaj   +1 more source

A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile

IEEE Journal of the Electron Devices Society, 2021
In this article, we investigate a 4H-SiC super- junction (SJ) MOSFET structure with a charge-imbalance doping-profile. According to our numerical simulations and comparisons with the conventional SiC VDMOS (C-VDMOS) and SiC SJ VDMOS (SJ-VDMOS) devices ...
Hao Huang, Ying Wang, Cheng-Hao Yu, Zhao-Huan Tang, Xing-Ji Li, Jian-Qun Yang, Fei Cao   +6 more
doaj   +1 more source

Analyses and Experiments of Ultralow Specific On-Resistance LDMOS With Integrated Diodes

IEEE Journal of the Electron Devices Society, 2021
An ultralow specific on-resistance ( ${R} _{\mathrm{ on,sp}}$ ) accumulation-mode LDMOS (ALDMOS) is proposed and investigated by simulations and experiments.
Jie Wei, Kaiwei Dai, Xiaorong Luo, Zhen Ma, Jie Li, Congcong Li, Bo Zhang   +6 more
doaj   +1 more source

Note Clarifying the Paper, “Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design”

IEEE Journal of the Electron Devices Society, 2020
This note clarifies an important approximation used to simulate the breakdown field in the SiO2 liner of a SiC Charge-Sheet Superjunction - a new power device structure - reported by Akshay and Karmalkar (2020).
K. Akshay, Shreepad Karmalkar
doaj   +1 more source

Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs

IEEE Access, 2020
In this work, device parameters for GaN vertical trench MOSFETs have been investigated systematically to further improve the device characteristics. The n- GaN drift layer, the p+ GaN layer and the trench gate are designed and optimized systematically ...
Shuang Liu, Xiufeng Song, Jincheng Zhang, Shenglei Zhao, Jun Luo, Hong Zhang, Yachao Zhang, Weihang Zhang, Hong Zhou, Zhihong Liu, Yue Hao   +10 more
doaj   +1 more source

A Uni-gate vertical power MOSFET with improved figure of Merits: Design and analysis

Alexandria Engineering Journal, 2023
In this paper, we propose and analyze a single buried gate power MOSFET structure. The structure uses single gate buried under the source and channel region with its dimensions optimized to get the best Ron-BV tradeoff. The device exhibits a good scaling
Hafsa Nigar, Hend I. Alkhammash, Shamimul. Qamar, Sajad A Loan   +3 more
doaj   +1 more source

Evolution of resistance (R) gene specificity

Essays in Biochemistry, 2022
Abstract Plant resistance (R) genes are members of large gene families with significant within and between species variation. It has been hypothesised that a variety of processes have shaped R gene evolution and the evolution of R gene specificity.
Hanna Märkle, Isabel Saur, Remco Stam
openaire   +2 more sources