Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars
Results in Physics, 2020 To reduce specific on-resistance (Ron,sp) of power devices, a novel SOI (silicon-on-insulator) trench gate LDMOS with heavily doping L-shaped P/N pillars and vertical dual-trench-gates is proposed in this paper, and its physical mechanism and electrical ...
Jingwei Guo +6 more
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An Epistemic Approach to Coercion-Resistance for Electronic Voting Protocols [PDF]
, 2009 Coercion resistance is an important and one of the most intricate security requirements of electronic voting protocols. Several definitions of coercion resistance have been proposed in the literature, including definitions based on symbolic models ...
Kuesters, Ralf, Truderung, Tomasz
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Does microbicide use in consumer products promote antimicrobial resistance? A critical review and recommendations for a cohesive approach to risk assessment [PDF]
, 2013 The increasing use of microbicides in consumer products is raising concerns related to enhanced microbicide resistance in bacteria and potential cross resistance to antibiotics.
Bloomfield, Sally +12 more
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Analyses and Experiments of Ultralow Specific On-Resistance LDMOS With Integrated Diodes
IEEE Journal of the Electron Devices Society, 2021 An ultralow specific on-resistance ( ${R} _{\mathrm{ on,sp}}$ ) accumulation-mode LDMOS (ALDMOS) is proposed and investigated by simulations and experiments.
Jie Wei +6 more
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Resistance to BRAF inhibitors induces glutamine dependency in melanoma cells [PDF]
, 2015 BRAF inhibitors can extend progression-free and overall survival in melanoma patients whose tumors harbor mutations in BRAF. However, the majority of patients eventually develop resistance to these drugs. Here we show that BRAF mutant melanoma cells that
Baenke, Franziska +12 more
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IEEE Journal of the Electron Devices Society, 2020 This note clarifies an important approximation used to simulate the breakdown field in the SiO2 liner of a SiC Charge-Sheet Superjunction - a new power device structure - reported by Akshay and Karmalkar (2020).
K. Akshay, Shreepad Karmalkar
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A Uni-gate vertical power MOSFET with improved figure of Merits: Design and analysis
Alexandria Engineering Journal, 2023 In this paper, we propose and analyze a single buried gate power MOSFET structure. The structure uses single gate buried under the source and channel region with its dimensions optimized to get the best Ron-BV tradeoff. The device exhibits a good scaling
Hafsa Nigar +3 more
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Mapping and candidate-gene screening of the novel Turnip mosaic virus resistance gene retr02 in Chinese cabbage (Brassica rapa L.) [PDF]
, 2013 The extreme resistance to Turnip mosaic virus observed in the Chinese cabbage (Brassica rapa) line, BP8407, is monogenic and recessive. Bulked segregant analysis was carried out to identify simple sequence repeat and Indel markers linked to this ...
Li, Fei +8 more
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Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs
IEEE Access, 2020 In this work, device parameters for GaN vertical trench MOSFETs have been investigated systematically to further improve the device characteristics. The n- GaN drift layer, the p+ GaN layer and the trench gate are designed and optimized systematically ...
Shuang Liu +10 more
doaj +1 more source
Integratable trench MOSFET with ultra‐low specific on‐resistance
Electronics Letters, 2015 A novel integratable metal–oxide–semiconductor field‐effect transistor (MOSFET) with a trench source (TS) and a trench gate (TG) (TS–TG MOSFET) is proposed. The TS and TG cause a strong assistant depletion effect and thus dramatically increase the N ‐drift doping concentration (
Chao Yin +3 more
openaire +1 more source