Results 41 to 50 of about 4,215 (202)

Femtosecond‐Laser‐Induced Physical Unclonable Random Maze Structure for Storage‐Free Encryption

open access: yesAdvanced Science, EarlyView.
Femtosecond‐laser‐induced gold random maze structures serve as multimodal physical unclonable functions for storage‐free encryption. Their stochastic optical, electrical, and Raman responses are generated by plasmon‐assisted Marangoni formation and converted into AES‐compatible keys without permanent secret‐key storage, offering a portable route toward
Shiru Jiang   +6 more
wiley   +1 more source

Paraborg: Paramedic Cyborg Insects for In Situ Emergency Drug‐Delivery

open access: yesAdvanced Science, EarlyView.
This work introduces Paraborg, a human‐supervised paramedic cyborg‐insect platform that combines controllable locomotion, onboard imaging, and an auto‐injection mechanism for in situ drug‐delivery. By demonstrating reliable navigation, target stabilization, injector launch, and multi‐insect teamwork, the study extends cyborg insects from survivor ...
H. Nhan Le   +5 more
wiley   +1 more source

Research on High-power Full SiC Converter

open access: yes机车电传动, 2018
In order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied.
ZHANG Qing   +5 more
doaj  

LDMOS Channel Thermometer Based on a Thermal Resistance Sensor for Balancing Temperature in Monolithic Power ICs

open access: yesSensors, 2017
This paper presents a method of thermal balancing for monolithic power integrated circuits (ICs). An on-chip temperature monitoring sensor that consists of a poly resistor strip in each of multiple parallel MOSFET banks is developed.
Tingyou Lin, Yingchieh Ho, Chauchin Su
doaj   +1 more source

An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance

open access: yesIEEE Access, 2023
This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications.
Nilesh Kumar Jaiswal, V. N. Ramakrishnan
doaj   +1 more source

Receptogenesis in a Vascularized Robotic Embodiment

open access: yesAdvanced Science, EarlyView.
Functional augmentation of situated robots via ex novo hardware generation extends physical adaptability. Drawing inspiration from open circulatory systems for mass and function redistribution, this study presents a vascularized robotic composite exhibiting receptogenesis ‐ the on‐demand construction of sensors ‐ from internal fluid reserves based on ...
Kadri‐Ann Pankratov   +8 more
wiley   +1 more source

A Novel 4H‐SiC MOSFET With High‐K/Low‐K Dielectric for Improved Frequency Characteristics

open access: yesIET Power Electronics
Split‐Gate MOSFET (SG‐MOSFET) is promising in power‐switching circuits due to the fast turn‐on/off speed and low switching loss. However, in higher‐frequency applications, the gate architecture needs to be changed to obtain the improved high‐frequency ...
Jiaxing Chen, Juntao Li, Lin Zhang
doaj   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

open access: yesAdvanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

open access: yesCrystals, 2023
Ultra-wide bandgap semiconductor gallium oxide (Ga2O3) features a breakdown strength of 8 MV/cm and bulk mobility of up to 300 cm2V−1s−1, which is considered a promising candidate for next-generation power devices.
Maolin Zhang   +5 more
doaj   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash   +4 more
wiley   +1 more source

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