Results 41 to 50 of about 4,760,033 (232)
EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)
International Islamic University Malaysia Engineering Journal, 2020 Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor.
Muhaimin Bin Mohd Hashim +2 more
doaj +1 more source
Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication
Advanced Materials Interfaces, EarlyView.Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley +1 more source
Técnica de Mosfet chaveado para filtros programáveis operando à baixa tensão de alimentação [PDF]
, 2002 Tese (doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia Elétrica.O mercado e a necessidade de se implementar equipamentos portáteis têm pressionado a indústria a produzir circuitos com ...
Marques, Luís Cléber Carneiro
core
Comparison of MOSFET Gate Waffle Patterns Based on Specific On-Resistance [PDF]
Radioengineering, 2019 This article describes waffle power MOSFET segmentation and defines its analytic models. Although waffle gate pattern is well-known architecture for effective channel scaling without requirements on process modification, no until today precise model ...
P. Vacula +6 more
doaj
Gate‐Induced Critical Current Modulation in W–C Nanowires: The Role of Fabrication
Advanced Materials Technologies, EarlyView.Focused ion beam induced deposition (FIBID) enables precise control of superconducting W–C nanowire devices. Introducing a Ga+ focused ion beam (FIB) cleaning step reduces substrate damage and suppresses leakage currents, shifting gating thresholds to higher voltages.
Alba Arroyo‐Fructuoso +2 more
wiley +1 more source
Effects of design parameter on power handling capability of RF SOI switch
Dianzi Jishu YingyongThe effects of design parameter on power handling capability of radio-frequency silicon-on-insulator (RF SOI) switch were comprehensively investigated in this work, including the width of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) under ...
Liu Zhangli
doaj +1 more source
Modular, Textile‐Based Soft Robotic Grippers for Agricultural Produce Handling
Advanced Robotics Research, EarlyView.This article introduces textile‐based pneumatic grippers that transform simple textiles into robust bending actuators. Detailed experiments uncover how cut geometry and fabric selection shape performance. Successful handling of fragile agricultural items showcases the potential of textile robotics for safe, scalable automation in food processing and ...
Zeyu Hou +4 more
wiley +1 more source
Desenvolvimento de um dosímetro in vivo a MOSFET para aplicações em radioterapia [PDF]
, 2013 Tese (doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico, Programa de Pós-Graduação em Engenharia Elétrica, Florianópolis, 2013.Na radioterapia (teleterapia), a diferença entre a dose prescrita e a dose recebida pelo paciente deve ...
Siebel, Osmar Franca
core
, 2001 A vertical power MOSFET’s whose n-drift region is stacked by alternate pn structure named as MULTILAYER POWER MOSFET has been proposed for high voltage application with extremely low on-resistance.
Hakim, M.M.A., Alam, A.H.M. Zahirul
core +1 more source
Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors
Advanced Science, EarlyView.This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung +7 more
wiley +1 more source