Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness [PDF]
, 2002 The low-frequency noise power spectral density of MOSFETs is decreased if the MOSFETs are periodically switched 'off' (switched bias conditions). The influence of the gate oxide thickness on fixed bias and switched biased low frequency drain current ...
Knitel, M.J. +3 more
core +2 more sources
EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)
International Islamic University Malaysia Engineering Journal, 2020 Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor.
Muhaimin Bin Mohd Hashim +2 more
doaj +1 more source
A Power MOSFET With P-Base Schottky Diode and Built-In Channel Diode for Fast Reverse Recovery
IEEE Journal of the Electron Devices Society, 2021 A power MOSFET with P-base Schottky diode and built-in channel diode is proposed and numerically investigated in this article. The P-base Schottky diode formed by the P-base Schottky contact is in reverse series with the P-base/N-drift junction diode ...
Ping Li +3 more
doaj +1 more source
Applications of combined MOSFET-IGBT power leg with reduced switching losses [PDF]
, 2008 This paper discusses power legs built upon the combination of a MOSFET and an IGBT. The suggested combined use of those different switches is intended to be applied in PWM controlled single and three phase inverters.
Marinov, Angel S +2 more
core
Investigation of FACTS devices to improve power quality in distribution networks [PDF]
, 2011 Flexible AC transmission system (FACTS) technologies are power electronic solutions that improve power transmission through enhanced power transfer volume and stability, and resolve quality and reliability issues in distribution networks carrying ...
Rehman Shaikh, Muhammad Asim +1 more
core +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Advanced Functional Materials, EarlyView.Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions [PDF]
, 2017 The conduction and switching losses of SiC and GaN power transistors are compared in this paper. Voltage rating of commercial GaN power transistors is less than 650V while that of SiC power transistors is less than 1200V.
Acanski M. +12 more
core +2 more sources
Self‐Healing and Stretchable Synaptic Transistor
Advanced Functional Materials, EarlyView.A self‐healing stretchable synaptic transistor (3S‐T) is realized using a p‐PVDF‐HFP‐DBP/PDMS‐MPU‐IU bilayer as gate insulator, where dipole‐dipole interaction enhances polarization to achieve a large memory window. Leveraging its neuronal biomimicry, the synaptic transistor demonstrates electrically compatibility with the biological brain. Furthermore,
Hyongsuk Choo +10 more
wiley +1 more source
Comparison of MOSFET Gate Waffle Patterns Based on Specific On-Resistance [PDF]
Radioengineering, 2019 This article describes waffle power MOSFET segmentation and defines its analytic models. Although waffle gate pattern is well-known architecture for effective channel scaling without requirements on process modification, no until today precise model ...
P. Vacula +6 more
doaj
Solid state switch provides high input-to-output isolation [PDF]
, 1970 Switch uses a combination of N-channel and P-channel Metal Oxide Semiconductor Field Effect Transistors /MOSFET/ to obtain a normally open switch with no power applied.
Magee, R. L., Trowbridge, L. E.
core +1 more source